STB12 Search Results

STP12NM50FP

Abstract: STP12NM50 12NM50 STB12NM50 STB12NM50-1
Contextual Info: STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-CHANNEL 500V - 0.30Ω - 12A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP12NM50/FP STB12NM50 STB12NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.35Ω <0.35Ω <0.35Ω 12 A 12 A 12 A

STB1277

Abstract: STB1277Y
Contextual Info: STB1277 -2A , -30V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. High Total Power Dissipation. High hFE and Good Linearity

STB120NH03LT4

Abstract: B120NH03L STB120NH03L
Contextual Info: STB120NH03L N-CHANNEL 30V - 0.005 Ω - 60A D2PAK STripFET III POWER MOSFET FOR DC-DC CONVERSION TYPE STB120NH03L • ■ ■ ■ ■ ■ VDSS RDS on ID 30 V <0.0055 Ω 60 A(#) TYPICAL RDS(on) = 0.005 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED

STB1277

Abstract: Transistor TRANSISTOR stb1277 STD1862
Contextual Info: STB1277 Semiconductor PNP Silicon Transistor Description • Audio power amplifier • High current application Features • High current : IC=-2A • Complementary pair with STD1862 Ordering Information Type NO. Marking STB1277 STB1277 Package Code TO-92

B12NK80Z

Contextual Info: STB12NK80Z-S N-CHANNEL 800V - 0.65Ω - 10.5A I2SPAK Zener-Protected SuperMESH Power MOSFET TYPE STB12NK80Z-S • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V < 0.75 Ω 10.5 A 190 W TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

12nm50

Contextual Info: STP12NM50 - STP12NM50FP STB12NM50-1 N-CHANNEL 500V - 0.30Ω - 12A TO-220/TO-220FP/I2PAK MDmesh Power MOSFET TYPE • ■ ■ ■ ■ ■ VDSS RDS on ID STP12NM50/FP 500V <0.35Ω 12 A STB12NM50-1 500V <0.35Ω 12 A TYPICAL RDS(on) = 0.30Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

STP120NF10

Abstract: STB120NF10 STW120NF10 W120NF10 B120NF10 P120NF10
Contextual Info: STP120NF10 - STB120NF10 STW120NF10 N-channel 100V - 0.009Ω - 110A - TO-247 - TO-220 - D²PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STW120NF10 STP120NF10 STB120NF10 100V 100V 100V <0.0105Ω <0.0105Ω <0.0105Ω 110A 110A 110A

P12NK80

Abstract: VDD400 w12nk80z B12NK80Z stw12nk80z p12nk80z W12NK80
Contextual Info: STB12NK80Z STP12NK80Z - STW12NK80Z N-CHANNEL 800V - 0.65Ω - 10.5A - TO220-D²PAK-TO247 Zener-Protected SuperMESH MOSFET General features VDSS Type STB12NK80Z STP12NK80Z STW12NK80Z Package RDS on 800 V <0.75 Ω 800 V <0.75 Ω 800 V <0.75 Ω ID Pw 10.5 A

p12nm50n

Abstract: B12NM50 f12nm50n B12NM50N P12NM50
Contextual Info: STP12NM50N - STF12NM50N STB12NM50N - STD12NM50N N-CHANNEL 500V - 0.33 Ω - 11 A TO-220/FP/D2PAK/DPAK SECOND GENERATION MDmesh MOSFET TARGET SPECIFICATION Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID STB12NM50N STD12NM50N STF12NM50N

w12nk80z

Abstract: p12nk80z stw12nk80z b12nk80z STB12NK80Z STB12NK80ZT4 STP12NK80Z
Contextual Info: STP12NK80Z - STB12NK80Z STW12NK80Z N-CHANNEL 800V - 0.65Ω - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP12NK80Z STB12NK80Z STW12NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V 800 V 800 V < 0.75 Ω < 0.75 Ω < 0.75 Ω

Contextual Info: ST10200C STB10200C STD10200C SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N1430, Rev. - ST10200C/STB1200C/STD10200C SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection

Contextual Info: ST12100C STB12100C STF12100C STD12100C SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N1042, Rev. A ST12100C/STB12100C/STF12100C/STD12100C SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes

B120NH03L

Abstract: STB120NH03L STB120NH03LT4
Contextual Info: STB120NH03L N-CHANNEL 30V - 0.005 Ω - 60A D2PAK STripFET III POWER MOSFET FOR DC-DC CONVERSION TYPE STB120NH03L • ■ ■ ■ ■ ■ VDSS RDS on ID 30 V <0.0055 Ω 60 A(#) TYPICAL RDS(on) = 0.005 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED

STD1862

Abstract: TRANSISTOR stb1277 STB1277 std1862 TRANSISTOR
Contextual Info: STD1862 NPN Silicon Transistor Descriptions PIN Connection • Audio power amplifier C • High current application E B B C Features E • High current : IC=2A • Complementary pair with STB1277 TO-92 Ordering Information Type NO. Marking STD1862 STD1862

p12nm50fp

Abstract: p12nm50 STP12NM50FP b12nm50 STB12NM50 STB12NM50-1 STB12NM50T4 STP12NM50 N-Channel mosfet 400v to220
Contextual Info: STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STB12NM50 550V <0.35Ω 12A STB12NM50-1 550V <0.35Ω 12A STP12NM50 550V <0.35Ω

P12NK80Z

Abstract: W12NK80Z W12NK80 JESD97 STB12NK80Z STP12NK80Z STW12NK80Z B12NK80Z b12nk8 P12NK
Contextual Info: STB12NK80Z STP12NK80Z - STW12NK80Z N-channel 800V - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH MOSFET General features Type VDSS RDS on (@Tjmax) ID PW STB12NK80Z 800V <0.75Ω 10.5 A 190W STP12NK80Z 800V <0.75Ω 10.5 A 190W

P12NK80

Abstract: w12nk80z W12NK80 p12nk80z W12NK STP12NK80Z P12NK b12nk8 JESD97 STB12NK80Z
Contextual Info: STB12NK80Z STP12NK80Z - STW12NK80Z N-channel 800V - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH Power MOSFET Features Type VDSS RDS on (@Tjmax) ID PW STB12NK80Z 800V <0.75Ω 10.5 A 190W STP12NK80Z 800V <0.75Ω 10.5 A 190W 3

Contextual Info: STD1862L NPN Silicon Transistor Descriptions PIN Connection • Audio power am plifier • High current applicat ion Features • High current : I C= 2A • Com plem ent ary pair wit h STB1277L TO -92L 1: Emitter 2 :Collector 3: Base Ordering Information Type N O.

Contextual Info: STD1862 NPN Silicon Transistor Descriptions PIN Connection • Audio power am plifier C • High current applicat ion E B B C Features E • High current : I C= 2A • Com plem ent ary pair wit h STB1277 TO-92 Ordering Information Type N O. M a r k in g STD1862

STB12NM50

Contextual Info: STB12NM50 N-CHANNEL 500V - 0.35Ω - 12A D2PAK MDmesh Power MOSFET TYPE STB12NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V <0.4Ω 12 A TYPICAL RDS(on) = 0.35Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

F12NM60N

Abstract: STP12NM60N STP12NM60 STB12NM60N STB12NM60N-1 STF12NM60N STW12NM60N
Contextual Info: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω

P12NM60

Contextual Info: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω

Contextual Info: STP12NM50 - STP12NM50FP STB12NM50-1 N-CHANNEL 500V - 0.35Ω - 12A TO-220/TO-220FP/I2PAK MDmesh Power MOSFET TYPE • ■ ■ ■ ■ ■ VDSS RDS on ID STP12NM50/FP 500V <0.4Ω 12 A STB12NM50-1 500V <0.4Ω 12 A TYPICAL RDS(on) = 0.35Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

STD1862

Abstract: Transistor std1862 TRANSISTOR STB1277 TRANSISTOR stb1277
Contextual Info: STD1862 Semiconductor NPN Silicon Transistor Descriptions • Audio power amplifier • High current application Features • High current : IC=2A • Complementary pair with STB1277 Ordering Information Type NO. Marking STD1862 STD1862 Package Code TO-92