STB10 Search Results

STB100NF04L

Contextual Info: STB100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET II POWER MOSFET TYPE STB100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION This Power MOSFET is the latest development of

STB10NB50

Contextual Info: STB10NB50 N-CHANNEL 500V - 0.55Ω - 10.6A D²PAK PowerMesh MOSFET TYPE VDSS RDS on ID STB10NB50 500 V < 0.60 Ω 10.6 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.55 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

ISD 1720

Abstract: STB100NF03L-03-1
Contextual Info: STB100NF03L-03-1 N-CHANNEL 30V - 0.0026 Ω - 100A I2PAK STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS R DS on ID STB100NF03L-03-1 30 V <0.0032 Ω 100 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE DESCRIPTION

p100NF

Abstract: B100NF03L B100NF STB100NF03L-03T4 JESD97 STB100NF03L-03 STB100NF03L-03-1 STP100NF03L-03 P100NF03L ISD 1720
Contextual Info: STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-1 N-channel 30V - 0.0026Ω - 100A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB100NF03L-03 30V <0.0032Ω 100A STB100NF03L-03-1 30V <0.0032Ω 100A STP100NF03L-03 30V

STB100NF03L-03-1

Contextual Info: STB100NF03L-03-1 N-CHANNEL 30V - 0.0026 Ω - 100A I2PAK STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS R DS on ID STB100NF03L-03-1 30 V <0.0032 Ω 100 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE DESCRIPTION

Contextual Info: f Z Ä 7 S G S -T H O M S O N 7 # u D m o is L io T r ^ M e i S T B 1 0 N A 4 0 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB10NA40 V dss RdS od Id 400 V < 0.55 a 10 A • . . . . . B . TYPICAL Rds(oii) = 0.46 Î2 ± 30V GATE TO SOURCE VOLTAGE RATING

10N65K3

Contextual Info: STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages Datasheet - production data Features TAB Order codes 3 1 1 RDS on max ID PTOT STB10N65K3 3 D2PAK

Contextual Info: STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 N-channel 950 V, 0.65 Ω typ., 8 A Zener-protected SuperMESH 5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet - production data Features TAB Order codes 3 1 2 D PAK 3 VDS RDS on max ID PTOT

STB10NB20

Contextual Info: STB10NB20 N-CHANNEL 200V - 0.30Ω - 10A D2PAK PowerMESH MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STB10NB20 200 V <0.40 Ω 10 A TYPICAL RDS(on) = 0.30 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: STB100NF03L-03 N-CHANNEL 30V - 0.0026 Ω - 100A D2PAK STripFET II POWER MOSFET TYPE STB100NF03L-03 • ■ ■ ■ VDSS R DS on ID 30 V <0.0032 Ω 100 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 1 DESCRIPTION

Contextual Info: STB100NF04L N-CHANNEL 40V - 0.0036Ω - 100A D2PAK STripFET POWER MOSFET TYPE STB100NF04L • ■ ■ ■ V DSS RDS on ID 40 V <0.0042 Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 1 DESCRIPTION This Power Mosfet is the latest development of

Contextual Info: ST1060C STB1060C STD1060C SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N1416, Rev. - ST1060C/STB1060C/STD1060C SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection

Contextual Info: ST10200C STB10200C STD10200C SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N1430, Rev. - ST10200C/STB1200C/STD10200C SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection

B100NH02L

Abstract: STB100NH02L STB100NH02LT4 b100nh B100NH02L STMicroelectronics
Contextual Info: STB100NH02L N-CHANNEL 24V - 0.0052 Ω - 60A D²PAK STripFET III POWER MOSFET TYPE STB100NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.006 Ω 60 A (2) TYPICAL RDS(on) = 0.0052 Ω @ 10 V TYPICAL RDS(on) = 0.007 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

Contextual Info: STB10NB20 N - CHANNEL 200V - 0.30Î2 - 1 0A - D2PAK PowerMESH MOSFET TYPE V S TB10N B20 • . . . . . R D S o n Id < 0 .4 0 Q. 10 A dss 200 V TYPICAL R D S (on) = 0.30 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

p10nk60zfp

Abstract: p10nk60 STB10NK60Z STB10NK60Z-1 STP10NK60Z STP10NK60ZFP STW10NK60Z p10nk60z VDD480V
Contextual Info: STB10NK60Z/-1 - STP10NK60Z/FP STW10NK60Z N-CHANNEL 600V-0.65Ω-10A - TO220/FP-D²/I²PAK-TO-247 Zener-Protected SuperMESH MOSFET General features Type STB10NK60Z STB10NK60Z-1 STP10NK60ZFP STP10NK60Z STW10NK60Z Package VDSS RDS on ID Pw 600 600 600 600

B100NH02L

Abstract: B100NH B100NH02L STMicroelectronics st 393 JESD97 STB100NH02L STB100NH02LT4
Contextual Info: STB100NH02L N-channel 24V - 0.0052Ω - 60A - D2PAK STripFET III Power MOSFET General features Type VDSS RDS on ID STB100NH02L 24V <0.006Ω 60A(1) 1. Value limited by wire bonding • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced ■

Contextual Info: STB100NF03L-03 N-CHANNEL 30V - 0.0026 Ω - 100A D2PAK STripFET II POWER MOSFET TYPE STB100NF03L-03 • ■ ■ ■ ■ VDSS R DS on ID 30 V <0.0032 Ω 100 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE SURFACE-MOUNTING D2PAK (TO-263)

Contextual Info: ST10100C STB10100C STF10100C STD10100C SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N1040, Rev. A ST10100C/STB10100C/STF10100C/STD10100C SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes

Contextual Info: ST10150C STB10150C STD10150C SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N1393, Rev. - ST10150C/STB10150C/STD10150C SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection

Contextual Info: ST1045 STB1045 STF1045 STD1045 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N1028, Rev. A ST1045/STB1045/STF1045/STD1045 SCHOTTKY RECTIFIER Applications: • • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection

STB10NC50

Abstract: STB10NC50-1
Contextual Info: STB10NC50-1  N - CHANNEL 500V - 0.48Ω - 10A - I2PAK/D2PAK PowerMESH MOSFET PRELIMINARY DATA TYPE STB10NC50-1 • ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.52 Ω 10 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: STB10NK60Z, STP10NK60Z STW10NK60Z N-channel 650 V, 0.65 Ω, 10 A, SuperMESH Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247 Features Type VDSS RDS on max STB10NK60Z-1 600 V < 0.75 Ω 10 A 115 W STB10NK60Z 600 V < 0.75 Ω 10 A 115 W

mj 340

Abstract: p10nk60zfp p10nk60 p10nk60z B10NK60Z-1 p10nk6
Contextual Info: STB10NK60Z/-1 - STP10NK60Z/FP STW10NK60Z N-CHANNEL 600V-0.65Ω-10A - TO220/FP-D²/I²PAK-TO-247 Zener-Protected SuperMESH MOSFET General features Type STB10NK60Z STB10NK60Z-1 STP10NK60ZFP STP10NK60Z STW10NK60Z Package VDSS RDS on ID Pw 600 600 600 600