STATIC SRAM SINGLE PORT Search Results

KM6164000B

Abstract: KM6164000BLI-L KM6164000BL-L KM6164000BLT-5L KM6164000BLT-7L
Contextual Info: KM6164000B Family CMOS SRAM 256Kx16 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION Process Technology : 0.4* • CMOS Organization : 256Kx16 Power Supply Voltage : Single 5V •• 10% Low Data Retention Voltage : 2V Min Three state output and TTL Compatible

Contextual Info: KM6164000B Family CMOS SRAM 256Kx16 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM616V4000B family is fabricated by SAMSUNG'S Process Technology : 0.4* • CMOS Organization : 256Kx16 Power Supply Voltage : Single 5V •• 10% Low Data Retention Voltage : 2V Min

NVSRAM

Abstract: PDIP32 U632H64 U634H256
Contextual Info: Product Summary nvSRAM nvSRAM: SRAM and EEPROM within a single Chip Author: Dr. Stefan Günther Dr. Steffen Buschbeck Heiko Roeper Powerful processor systems which place high demands on reliability require optimum data storage systems. The nvSRAM non-volatile Static Random Access Memory now available

SOP-330mil

Abstract: WS6264LLP WS6264 WS6264LLFP WS6264LLFPI WS6264LLPI 8407 28-pin
Contextual Info: High Speed Super Low Power SRAM WS6264 8K-Word By 8 Bit GENERAL DESCRIPTION The WS6264 is a high performance, high speed and super low power CMOS Static Random Access Memory organized as 8,192 words by 8bits and operates from a single 4.5V to 5.5V supply voltage.

AN-253

Abstract: PC-to-TMS320 AN-120 AN-254 AN-42 AN-91 IDT70825 4866 an-255-dual-port sequential MEMORY line
Contextual Info: INTRODUCTION TO MULTI-PORT MEMORIES APPLICATION NOTE AN-253 By Cheryl Brennan What is a multi-port SRAM? high impedance pull-up resistors to provide the proper circuit biasing. Figure 2 depicts the configuration of IDT’s dual-port SRAM cell. This canbe described as a standard four transistor memory cell with two additional

S100

Abstract: S133 S166 IDT71T6480H 71T6480H
Contextual Info: Advance Information IDT71T6480H 9Mb Pipelined QDR SRAM Burst of 4 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 9Mb Density 512K x 18 Separate Independent Read and Write Data Ports — Supports concurrent transactions

f4171

Abstract: idt7134 PC-to-TMS320 IDT71342 TMS320 TMS320C30 TMS320 connected inverter BA031 74als521
Contextual Info: DUAL-PORT SRAM SIMPLIFYS PC-TO-TMS320 INTERFACE APPLICATION NOTE AN-68 Integrated Device Technology, Inc. by Jim Handy & Barry Seidner - Integrated Device Technology, Inc. Jon Bradley - Texas Instruments, Inc. RAM would be used to store code which would be debugged

Contextual Info: September 1990 Edition 1.0 FUJITSU DATA SHEET MB8441-45/-55 CMOS 64K-BIT DUAL PORT SRAM 8K X 8 Bits CMOS Dual Port Static Random Access Memory The Fujitsu MB8441 is a dual-port high-performance static random access memory SRAM organized as 8,192 words x 8 bits and fabricated using CMOS technology.

26F640

Abstract: ba15 diode transistor ba15 32-PIN CF15 NX26F640C NXSF020A-0700 3D00-3FFF 3F80-3FFF 3F003FFF
Contextual Info: NX26F640C 64M-BIT SERIAL FLASH MEMORY WITH 2-PIN NXS INTERFACE ADVANCED JANUARY 2001 FEATURES • Flash Storage for Resource-Limited Systems – Ideal for portable/mobile and microcontroller-based applications that store data, audio, and images • Ultra-low Power for Battery-Operation

DSP56300

Contextual Info: 2 EXPANSION PORT 2.1 INTRODUCTION The expansion port of the DSP56300 Core has the following features/functions: • Interrupt And Mode Control • Clock and Phase-Locked Loop PLL • On-chip Emulator Interface (OnCE)/JTAG Interface • Memory Expansion Port (Port A)

OXE810

Abstract: OXU810SE OXE800 oxe810se OXE800SE OXU810 ARM926EJ-S OXU810SEPBAG VIA ARM926EJ-S
Contextual Info: OXU810SE, Single Drive NAS System Device with Encryption Highlights ƒ General Features o Seamless interface to an integrated SATA port ƒ Key Features o Seamless interface to an integrated SATA port o Accessible from multiple clients using Ethernet integrated 10/100/1000

ppi to rs232

Abstract: LH77790B ARM7DI cpu 226 RS232 for modulator 16C450 82C54 82C55 sharp LCD INTERFACE marshall industries
Contextual Info: LH77790B EMBEDDED MICROCONTROLLER LH77790B INCLUDES: ARM7DI CPU Core Cache Memory Local SRAM Memory and Peripheral Interface DRAM Controller Sharp’s LH77790B is an ARM7DI RISC-based microcontroller designed to meet the requirements of advanced portable systems

ATL35

Contextual Info: ATL35 Memory SRAMs-1.0-12/97 Memory ATL35 0.35µ Compiled Gate Level SRAMs Compiled Gate Level SRAMs . 9-2 Common Single Port SRAM Sizes: Table. 9-2

ATL35

Abstract: sram spice ATMEL 744
Contextual Info: ATL35 Memory SRAMs-1.0-12/97 Memory ATL35 0.35µ Compiled Gate Level SRAMs Compiled Gate Level SRAMs . 9-2 Common Single Port SRAM Sizes: Table. 9-2

static SRAM single port

Abstract: al5b ATMEL 910 din 74 ATL35 PRAM12X32R1W1
Contextual Info: ATL35 Memory SRAMs-1.2-04/99 Memory ATL35 0.35µ Compiled Gate Level SRAMs Compiled Gate Level SRAM Loading . 9-2 Common Single Port SRAM Sizes: Table. 9-2

BY100

Abstract: Power Diode BY100 A12L IDT70P247
Contextual Info: VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM IDT70P257/247L Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Industrial: 55ns max. Low-power operation IDT70P257/247L

BY100

Abstract: A12L IDT70P248 70P24 70P25
Contextual Info: VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Industrial: 55ns max. Low-power operation IDT70P258/248L Active: 27mW (typ.)

248L

Abstract: A12L IDT70P248 0403A1 BY100- 70P258 70P24 70P25
Contextual Info: Š VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Industrial: 55ns max. Low-power operation IDT70P258/248L

ATL60

Abstract: 4 inputs OR gate
Contextual Info: ATL60SRAMs-3.4-04/98 Memory ATL60 SRAMs Compiled Gate Level Compiled Gate Level SRAMs . 9-2 Common Single Port SRAM Sizes: Table. 9-2

A12L

Abstract: 70P25
Contextual Info: PRELIMINARY IDT70P256/246L VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM Š Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Industrial: 55ns max. Low-power operation

max 1786

Abstract: SRAM timing ATL60
Contextual Info: SRAMs-3.3-6/96 Memory ATL60 SRAMs Compiled Gate Level Compiled Gate Level SRAMs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9-2 Common Single Port SRAM Sizes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9-2

motorola bmw

Contextual Info: SECTION 5 EXTERNAL MEMORY INTERFACE PORT A MOTOROLA DSP56602 User’s Manual 5-1 External Memory Interface (Port A) 5.1 5.2 5.3 5.4 5.5 5-2 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5-3 PORT A SIGNAL DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . .5-3

aa0720

Abstract: DSP56600 DSP56603 aa-0720 10BMW
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 SECTION 5 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 EXTERNAL MEMORY INTERFACE PORT A MOTOROLA DSP56603UM/AD 5-1 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 External Memory Interface (Port A) INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-3

CA 5668

Abstract: 5L25 CA 5668 datasheet A12L A13L 70T06
Contextual Info: HIGH-SPEED 2.5V 16/8K x 8 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 20/25ns max. – Industrial: 25ns (max.) Low-power operation