ST93C46CB1 Search Results

M28F512-12C3

Abstract: 93C56P xicor 28C64 AT28C17-25PC 93C66P m5m28f102j AT28C16-20PC ATMEL serial EEPROM 32K 93C56SN eeprom 28c64
Contextual Info: Main Menu September 2001 Cross Reference Guide Main Menu Main Menu Table of Contents Product Page Number Featured Product Information Serial EEPROM Atmel Fairchild Microchip ST Microelectronics Xicor 3-Wire/Microwire Serial EEPROM Atmel Microchip Fairchild

ST93C46

Abstract: ST93C46A ST93C46C ST93C47C
Contextual Info: ST93C46A,46C,46T ST93C47C,47T SERIAL MICROWIRE BUS 1K 64 x 16 or 128 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION DUAL ORGANIZATION: 64 x 16 or 128 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

ST93C46CB1

Contextual Info: f w 7 S G S -TH O M S O N *7 # . ST93C46A, ST93C46C ST93C46T SERIAL ACCESS CMOS 1K bit 64 x 16 or 128 x 8 EEPROM • MINIMUM 1 MILLION ERASE/WRITE CYCLES, with OVER 10 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 64 x 16 or 1 2 8 x 8 ■ BYTE/WORD and ENTIRE MEMORY PRO­

ST93C46

Abstract: M93C46 ST93C46A ST93C46C ST93C46T ST93C47C ST93C47T
Contextual Info: ST93C46A,46C,46T ST93C47C,47T 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 64 x 16 or 128 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

Contextual Info: 7 S C S -TH O M SO N I GfflB»IHI g»ffl(ga ST93C46A, ST93C46C ST93C46T SERIAL ACCESS MICROWIRE BUS 1K (64 x 16 or 128 x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 64 x 16 or 128 x 8 ■ BYTE/WORD and ENTIRE MEMORY

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

ST93C46

Abstract: ST93C46T ST93C46A ST93C46C ST93C56C
Contextual Info: 7 SCS-THOMSON I » [^©ilUigre©* ST93C46A, ST93C46C ST93C46T SERIAL ACCESS MICROW IRE BUS 1K 64 x 16 or 128 x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 64 x 16 or 128 x 8 ■ BYTE/WORD and ENTIRE MEMORY

AI00872C

Abstract: st93c46 AI00982B ST93C46CB1
Contextual Info: ST93C46A,46C,46T ST93C47C,47T 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 64 x 16 or 128 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

Contextual Info: ST93C46A,46C,46T ST93C47C,47T SGS-THOMSON llllM J ilL liM W Iie i 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 6 4 x 1 6 or 1 2 8 x8 ■ BYTE/WORD and ENTIRE MEMORY

Contextual Info: r z 7 S G S -T H O M S O N A 7# ^ » i l L i e i M M t ê S S T 9 3 C 4 6 A ,4 6 C ,4 6 T S T 9 3 C 4 7 C .4 7 T SERIAL MICROWIRE BUS 1K 64 x 16or 128 x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 64 x 16 or 128 x 8

24w04

Abstract: 24w08 24w04 program 24c04 program eeprom 24c04 6 24W04 6 ST93C46 24C08 code example ic st24c02 24C08 6 IC 24c08 contain
Contextual Info: ST24/25C02, ST24C02R ST24/25W02 SERIAL 2K 256 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES with 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 3V to 5.5V for ST24x02 versions – 2.5V to 5.5V for ST25x02 versions – 1.8V to 5.5V for ST24C02R version only

Contextual Info: ST93C46A,46C,46T ST93C47C,47T SERIAL MICROWIRE BUS 1K 64 x 16 or 128 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 64 x 16 or 128 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

ST93C46

Abstract: ST93C46A ST93C46C ST93C47C st93c46will
Contextual Info: C T SG S-TH O M SO N ^7#» Gffl IS(mi(gmi3(MD(g§ ST93C46A,46C,46T ST93C47C,47T SERIAL MICROWIRE BUS 1K (64 x 16 or 128 x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 64 x 16 or 128 x 8 ■ BYTE/WORD and ENTIRE MEMORY

MK48T87B24

Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
Contextual Info: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W

Contextual Info: r z 7 SGS-THOMSON ^ 7 # . » » in i * ® ST93C46A,46C,46T ST93C47C,47T SERIAL MICROWIRE BUS 1K 64 x 16 or 128 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 64 x 16 or 1 2 8 x8 BYTE/WORD and ENTIRE MEMORY