ST Z0 103 MA Search Results

ST Z0 103 MA

Contextual Info: What HEW LETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 F e atu res • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz • High Gain: 9.0 dB TypicalGssat 12 GHz • Low C ost P lastic Package • Tape-and-Reel Packaging

Contextual Info: ill# ICW 0RKS W149 4 4 0 BX A G Pset Spread Spectrum Frequency Synthesizer Features • Spread Spectrum feature always enabled • Maximized EMI suppression using IC WORKS’ Spread Spectrum Technology • l2C interface for programming • Power management control inputs

201 429 HP

Abstract: ATF-21186 ATF-21186-STR ATF-21186-TR1 0840 057 GLDB0 ga 1112
Contextual Info: TAff% HEW LETT mLftM P A C K A R D 0 .5 - 6 GHz G eneral P urpose G allium A rsenide FET Technical Data ATF-21186 Features Description • Low N o ise Figure: 0.5 dB Typ. @ 2 GHz • H igh O utpu t Pow er: 19 dBm Typ. P ldB @ 2 GHz • H igh MSG: 13.5 dB Typ. @ 2 GHz

Contextual Info: ill# ICW0RKS Preliminary W144 440BX AGPset Spread Spectrum Frequency Synthesizer • Supports frequencies up to 150MHz Features • Maximized EMI suppression using IC W O R K S ’ Spread Spectrum Technology • l2C interface for programming • Power management control inputs

Contextual Info: What HEWLETT* mLliM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0186 Features Description • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 0.9 GHz The MSA-0186 is a high perfor­ mance silicon bipolar Monolithic Microwave Integrated Circuit

Contextual Info: Preliminary W145 ill# ICW 0RKS 440BX AGPSet Spread Spectrum Frequency Generator Features • Maximized EMI suppression using IC W O R KS’Spread Spectrum Technology • Single chip system FTG for Intei^ 440BX AGPset • • • • • • • Three copies of CPU output

IS-94 mux

Abstract: Str x 5459
Contextual Info: VITESSE 4 0 0 M b /s 6 4 x 6 4 C r o s s p & tiit S w itc h FEATURES • • • • • Superior Performance: 400 Mb/s • Operating Range: 0° to +70° C • Power Dissipation: 9.4 W atts Nominal , 14.7 W atts (Max) • Clocked or Flow-Through Operation

Contextual Info: LSM330 iNEMO inertial module: 3D accelerometer and 3D gyroscope Datasheet - production data Description The LSM330 is a system-in-package featuring a 3D digital accelerometer with two embedded state machines that can be programmed to implement autonomous applications and a 3D digital

Contextual Info: ill# ICW 0RKS Advance Information W150 440BX AGPset Spread Spectrum Frequency Generator Features • Maximized EMI suppression using IC W O R KS’Spread Spectrum Technology • l2C interface for programming • Power m anagem ent control inputs • Single chip system FTG for InteP 440BX AGPset

Transistor TT 2246

Contextual Info: W hp% m LUM H E W L E TT PA CKA RD 1 .5 -1 8 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low M inim um N oise Figure: I dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • A sso ciated Gain: 9.4 dB Typical at 12 GHz

philips ferrite 4b1

Abstract: philips ferrite core 4b1 MEA200 3122 108 339 3 1 philips MATV amplifiers OM2063 SC16 gt 6312 UHF amplifier module
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET OM2063 Wideband amplifier module Product specification Supersedes data of June 1991 File under Discrete Semiconductors, SC16 1995 Nov 28 Philips Semiconductors Product specification Wideband amplifier module OM2063 DESCRIPTION

Contextual Info: LSM6DS1 iNEMO inertial module: 3D accelerometer and 3D gyroscope Datasheet - preliminary data Description The LSM6DS1 is a system-in-package featuring a 3D digital accelerometer and a 3D digital gyroscope. ST’s family of MEMS sensor modules leverages the robust and mature manufacturing

Contextual Info: LSM6DS1 iNEMO inertial module: 3D accelerometer and 3D gyroscope Datasheet - preliminary data Description The LSM6DS1 is a system-in-package featuring a 3D digital accelerometer and a 3D digital gyroscope. ST’s family of MEMS sensor modules leverages the robust and mature manufacturing

GaAs MMIC ESD, Die Attach and Bonding Guidelines

Abstract: AMMC-5026 AMMC-5026-W10 AMMC-5026-W50 HMMC-5026 Traveling Wave Amplifier
Contextual Info: AMMC-5026 2–35 GHz GaAs MMIC Traveling Wave Amplifier Data Sheet Chip Size: 3050 x 840 µm 119 x 33 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) Pad Dimensions: 75 x 75 µm (2.9 ± 0.4 mils) Description

lsm9ds1tr

Abstract: LGA-24L
Contextual Info: LSM9DS1 iNEMO inertial module: 3D accelerometer, 3D gyroscope, 3D magnetometer Datasheet - preliminary data Applications • Indoor navigation  Smart user interfaces  Advanced gesture recognition  Gaming and virtual reality input devices LGA-24L 3.5x3x1.0 mm

Contextual Info: P A IR C H II-D w w w .fairchildsem i.com s e m i c o n d u c t o r tm RC7102 BX Spread Spectrum Frequency Synthesizer for Pentium II Description • M aximized EMI suppression using Fairchild’s proprietary Spread Spectrum Technology • Single chip system frequency synthesizer for Intel BX

Contextual Info: What H E W L E T T mLnM P a c k a r d Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0505 Features Description • Cascadable 50 Q Gain Block The MSA-0505 is a high perfor­ m ance m edium pow er silicon bipolar M onolithic Microwave Integrated C ircuit MMIC housed

250M

Abstract: IRFF220 IRFF221 IRFF222 IRFF223 T4 sm diode PD937
Contextual Info: HE 0 I MaSSMSZ 0GQT37Q Ö | Data Shçet No. PD-9.378E INTERNATIONAL R E C T I F I E R ' 7 -3 Ÿ -O Ÿ INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IOR IRFF220 IRFF221 IM-CHAIMIMEL POWER MOSFETs TQ-39 PACKAGE IRFFSSS IRFFSS3 Features: 200 Volt, 0.8 Ohm HEXFET

LSM9DS0

Contextual Info: LSM9DS0 iNEMO inertial module: 3D accelerometer, 3D gyroscope, 3D magnetometer Datasheet - production data Applications • Indoor navigation  Smart user interfaces  Advanced gesture recognition  Gaming and virtual reality input devices LGA-24 4x4x1.0 mm

5964-4069E

Abstract: saa 1094 ATF pHEMT MARKING VD9 saa 1059 SAA 1251 saa 1074 SAA 1085
Contextual Info: Who I HEW LETT 1 "rim P A C K A R D 1.5-18 GHz Surface Mount Pseudomorpltic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low M inim um N oise F igure: I dB Typical at 12 GHz 0.6 dB Typical a t 4 GHz • A ssociated G ain: 9.4 dB Typical at 12 GHz

Contextual Info: Whnt H E W L E T T mLEM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0786 Features C ascadable 50 Q. Gain B lock Low O perating V oltage: 4.0 V Typical Vd 3 dB Bandw idth: DC to 2.0 GHz 12.5 dB Typical Gain at 1.0 GHz U n con d ition ally Stab le

Contextual Info: T h p t HEWLETT &"UM PA C K A R D 2 - 8 GHz Medium Power Gallium Arsenide FET Technical Data A TF-44101 Featu res • High Output Power: 32.0 dBm Typical Pi ^ at 4 GHz • High Gain a t 1 dB Compression: 8.5 dB Typical Gj ^ at 4 GHz • High Power Efficiency:

Contextual Info: What LETT mL'KM HEW PACKARD Cascadable Silicon Bipolar MMIC Am plifier Technical Data MSA-0670 Features • Cascadable 50 Î2 Gain Block • Low Operating Voltage: 3.5 V Typical Vd • 3 dB Bandwidth: DC to 1.0 GHz high reliability package. This MMIC is designed for use as a

jat52

Abstract: TA-TSY-000191 PM5319 PM5319-NI PMC-2030860
Contextual Info: us t, 20 04 09 :2 1: 24 PM ARROW 622 ASSP Telecom Standard Product Data Sheet Released es da y, 10 Au g PM5319 gi es , In c. on Tu ARROW 622 Released Issue No. 2: July 2004 Do wn lo ad ed by Sc o tt E st es of i 2T ec h no lo ASSP Telecom Standard Product Data Sheet