ST MAKE TRANSISTOR Search Results

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Abstract: 5304 POWER SUPPLY IC driver cicuit diagram transistor BCA 308 computer schematic power supply circuit diagram circuit design truth table NAND gate 74 epson 2480 manual ic configuration of xnor gates PCB design guide
Contextual Info: GATE ARRAY S1L35000 Series DESIGN GUIDE S1L35000 Series DESIGN GUIDE st issue March,2000 D May, 2001 in Japan C A MF924-02 NOTICE No part of this material may be reproduced or duplicated in any from or by any means without the written permission of EPSON. EPSON reserves the right to make changes to this material without

4060 4081 4024 50 Hz Crystal oscillator

Abstract: ic 4060 pin configuration diagram EQUIVALENT cd 1031 cs s1l902f CD 4060 PIN DIAGRAM RAM circuit diagram computer schematic power supply circuit diagram S1L9000 rf 12 pin marking Y24 seiko ink
Contextual Info: GATE ARRAY S1L9000F Series DESIGN GUIDE S1L9000F Series DESIGN GUIDE st issue March, 1996 D May, 2001 in Japan C A MF908-03 NOTICE No part of this material may be reproduced or duplicated in any from or by any means without the written permission of EPSON. EPSON reserves the right to make changes to this material without

AS1337

Abstract: GRM219R60J106KE19 GRM21BR60J226ME39
Contextual Info: Da t as heet AS1337 2 0 0 m A , D C - D C St e p - U p C o n v e r t e r w i t h B u c k M o d e 1 General Description 2 Key Features The AS1337 is a synchronous, fixed frequency, highefficiency DC-DC boost converter capable of supplying 3.3V @ 200mA from two AA Cells. Compact size and minimum external parts requirements make these devices perfect for modern

Contextual Info: TIP31A TIP32A Complementary Power transistors General features • Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE improved linearity 3 Applications ■ 1 Linear and switching industrial application 2 TO-220 Description

tip31a

Contextual Info: TIP31A Power transistors General features • New enhanced series ■ High switching speed ■ hFE improved linearity Applications 3 ■ Linear and switching industrial application 1 2 TO-220 Description The TIP31A is a base island technology NPN power transistor in TO-220 plastic package with

SD57045

Abstract: AN1224
Contextual Info: AN1224 Application note Evaluation board using SD57045 LDMOS RF transistor for FM broadcast application Introduction LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher

Contextual Info: TIP31C Power transistors General features • New enhanced series ■ High switching speed ■ hFE improved linearity ■ hFE Grouping 3 Applications ■ 1 Linear and switching industrial application 2 TO-220 Description The TIP31C is a base island technology NPN

TIP41C

Abstract: tip42c tip41c tip42c amplifier tip41c tip42c TRANSISTOR tip41c schematic diagram TÄ°P41C
Contextual Info: TIP41C TIP42C Complementary power transistors Features . • Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■ hFE improved linearity 1 Applications ■ General purpose circuits ■ Audio amplifier ■ Power linear and switching

TIP41CY

Abstract: TIP41C tip41c tip42c TRANSISTOR tip41c schematic diagram TRANSISTOR tip41c schematic tip42c TIP42CY TRANSISTOR tip41c TIP42C DIAGRAM STMicroelectronics to-220 amplifier date code
Contextual Info: TIP41C TIP42C Complementary power transistors Features . • Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■ hFE improved linearity 3 1 Applications ■ General purpose circuits ■ Audio amplifier ■ Power linear and switching

Contextual Info: 2ST3360 Hi-Rel NPN and PNP bipolar transistor 60 V, 2 A Target specification Features Polarity BVCEO IC max hFE(1) NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 1. @ Ic = 1 A and VCE = 2 V. • Very low collector-emitter saturation voltage ■ High current gain characteristic

Contextual Info: 2ST3360 Hi-Rel NPN and PNP bipolar transistor 60 V, 0.8 A Datasheet — production data Features Polarity BVCEO IC max hFE(1) NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 1. @ Ic = 1 A and VCE = 2 V. • Very low collector-emitter saturation voltage ■ High current gain characteristic

Contextual Info: 2ST3360 Hi-Rel NPN and PNP bipolar transistor 60 V, 0.8 A Datasheet — production data Features Polarity BVCEO IC max hFE(1) NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 1. @ Ic = 1 A and VCE = 2 V. • Very low collector-emitter saturation voltage ■ High current gain characteristic

LDMOS

Abstract: LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications
Contextual Info: AN1223 Application note RF power transistors: comparative study of LDMOS versus bipolar technology Introduction RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor yields superior

transistor st 431

Contextual Info: 2ST3360 Hi-Rel NPN and PNP bipolar transistor 60 V, 0.8 A Datasheet — production data Features Polarity BVCEO IC max hFE(1) NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 ) s ( ct u d o 1. @ Ic = 1 A and VCE = 2 V. • Very low collector-emitter saturation voltage

SD2942

Abstract: RG316-25 marking code r10 surface mount diode Wire wound resistor 5W 200B 700B RG316 SD2932 ST40 SD2942 equivalent
Contextual Info: SD2942 RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push pull ■ POUT = 350W min. with 15 db gain @ 175 MHz ■ Low RDS on Description M244 Epoxy sealed

Contextual Info: STEVAL-IHT007V1 Extension board with ACS switches for STM8S Discovery Kit Data brief Features • Direct drive of 110/220 VAC loads ■ Opto-transistors to isolate the high voltage side ■ Zero voltage switching to synchronize Triac / AC switch pulses with AC mains

Contextual Info: EVAL6520-1421 14 W / 21 W T5 miniature ballast driven by L6520 and STT13005D bipolar transistors Data brief Features • Drives either T5-14W-HE or T5-21W-HE lamps ■ Standard form factor 19 mm x 120 mm ■ Compliance with IEC61347-2-3, IEC61000-2-3 and EN55022 Class-C

COIL metal detector schematic

Abstract: SMD HF transistor transistor smd CF rs smd transistor NF NV SMD TRANSISTOR B82462-4683K TDE0160 TDE0160FP electronic schematic SMD TRANSISTOR ALL 04
Contextual Info: STEVAL-IFS004V1 Metal body proximity detector based on the TDE0160 Data Brief Features • Supply voltage: +4 V to +36 V ■ Supply current: <1.2 mA ■ Loss resistance: 5 kΩ to 50 kΩ ■ Oscillator frequency: <1 MHz ■ Output transistor: IC= 20 mA, VCE sat < 1.1 V

"Smoke Sensor"

Abstract: "fire Smoke Sensor" "Smoke Sensor" data sheet ssr schematic circuit fire alarm system smoke sensor schematic STEVAL-IAC001V1 SSR schematics SMARTCARD connector
Contextual Info: STEVAL-IAC001V1 Alarm platform Data Brief Features • 8 configurable, hard-wired inputs with programmable balance control ■ 7 configurable, hard-wired outputs that can be associated with each input 4 SSR, 2 transistorized, and 1 relay ■ Alarm-on and CU-active output indicators

Cycle10s

Abstract: mode 5 IFF L-band RF MOSFET transistor AZ 1
Contextual Info: The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10 s Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V

mode 5 IFF

Abstract: HVV1011-300 diode gp 429 hvvi "RF MOSFET" 300W 1030mhz hvv1011 1090mhz RF 1090MHz
Contextual Info: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V

BD241A

Abstract: BD241A-A BD241C JESD97
Contextual Info: BD241A-A NPN power transistor Features . • This device is qualified for automotive application ■ NPN transistor Applications ■ Audio, general purpose switching and amplifier transistors 1 3 TO-220 Description The devices are manufactured in Planar technology with “Base Island” layout. The

2STA1694

Abstract: 2STC4467
Contextual Info: 2STA1694 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -120 V ■ Complementary to 2STC4467 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC 3 2 1 Applications ■ TO-3P Audio power amplifier

2STA2510

Contextual Info: 2STA2510 High power PNP epitaxial planar bipolar transistor Preliminary data Features • High breakdown voltage VCEO = -100V ■ Complementary to 2STC2510 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC 3 2 Applications