ST DIODE VU Search Results

1SV28

Contextual Info: 1SV286 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE CATV CONVERTER 1'st OSC TUNING SILICON EPITAXIAL PLANAR TYPE 1 SV2 8 6 Unit in mm High Capacitance Ratio : C2V ! C20V = 8-9 TYP. Low Series Resistance : rs = 0.730 (TYP.) Useful for Small Size Tuner. •

HN2D01F

Abstract: lu2b
Contextual Info: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. • +0.2 2.8 - 0.3 +0.2 1.6-0.1 H N 2D01F is composed of 3 independent diodes. • Low Forward Voltage • F a st Reverse Recovery Time : trr = 1.6ns Typ.

1SV286

Abstract: C20V
Contextual Info: TOSHIBA 1SV286 1 SV2 8 6 TOSHIBA VARIABLE CAPACITANCE DIODE CATV CONVERTER 1'st OSC TUNING SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C2V / C20V = 8-9 TYP. • Low Series Resistance : rs = 0.730 (TYP.) • Useful for Small Size Tuner.

1SV286

Abstract: C20V
Contextual Info: TOSHIBA 1SV286 1 SV2 8 6 TOSHIBA VARIABLE CAPACITANCE DIODE CATV CONVERTER 1'st OSC TUNING SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C2V / C20V = 8-9 TYP. • Low Series Resistance : rs = 0.730 (TYP.) • Useful for Small Size Tuner.

1-1G1A

Abstract: 1SV286 C20V
Contextual Info: TO SH IBA 1SV286 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 286 CATV CONVERTER 1'st OSC TUNING • High Capacitance Ratio : C2V / C20V - 8-9 TYP. • Low Series Resistance : rs = 0.730 (TYP.) • Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TO SH IBA 1SV286 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 286 CATV CONVERTER 1'st OSC TUNING • • • High Capacitance Ratio : C2V / C20V - 8-9 TYP. Low Series Resistance : rs = 0.730 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)

PS2002B

Abstract: PS2002 transistor replacement 0z99
Contextual Info: NEC PHOTO COUPLER BfCTRON OEVICE PS2002B PHOTO CO U PLER IN D U ST R IA L U SE -N EP O C SERIES - DESCRIPTION The PS2002B is an optically coupled isolator containing a GaAsP light emitting diode and an NPN silicon darlington- connect­ ed phototransistor.

OE R611

Contextual Info: 3R3TI30E-080 4 st — K •U " 'f ' J X ^ i l — ;u : Outline Drawings DIODE and TYRISTOR MODULE • 4 # d i ■ Features • ^ ^ ^ ' < ' > ^ — '> 3 • 7 ^ Glass Passivation Chip Easy Connection • i&fi&ffi Insulated Type » <i T«.0 1 O.i 1 ».D i t

C 5388

Abstract: A-128 ERB38 T151 T460 T760 T810 T930 pic t460
Contextual Info: ERB38 o .8A re) : Outline Drawings f4 * - Y FA ST RECOVERY DIODE 1 0.8 28MIN 28MIN- Features Super high speed sw itching : Marking \tjz A5-3-K: ö Color code : White Low VF in turn on • a t s ia t t «5£ » £ Abridged type name H igh reliability Voltage class

Contextual Info: TOSHIBA HN2D01 FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 2 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm • H N 2 D 0 1 FU is composed of 3 independent diodes. • Low Forw ard Voltage • Fa st Reverse Recovery Tim e : tr r = 1.6ns Typ.

Contextual Info: TOSHIBA TLP598G T O SH IB A PHO TOCO UPLER PHOTO RELAY TLP598G Unit in mm T EL E C O M M U N IC A T IO N D A T A A C Q U ISIT IO N M E A SU R E M E N T IN ST R U M EN T AT IO N The TOSHIBA TLP598G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a

Contextual Info: TOSHIBA TLP599B T O SH IB A PHO TOCO UPLER PHOTO RELAY TLP599B T EL E C O M M U N IC A T IO N U nit in mm D A T A A C Q U ISIT IO N M E A SU R E M E N T IN ST R U M EN T AT IO N 6 Ti The TOSHIBA TLP599B consists of a gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a six lead

Contextual Info: T O SH IB A TLP598B T O S H IB A PH O T O C O U PLER PH O TO R ELA Y TLP598B TELE C O M M U N IC A T IO N U nit in mm D ATA A C Q UISITIO N M E A S U R E M E N T IN ST R U M EN T A TIO N The TO SH IBA TLP598B consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOS F E T in a

Contextual Info: ESD Protection of Set Top Appliances with PolySurg ESD Suppressors Why are Set Top boxes vulnerable to ESD The more sophisticated boxes include a variety of I/O jacks such as front panel USB, Audio/Video, S-Video, rear panel Satellite, cable, TV antenna, Wireless transmitter connection,

Contextual Info: n ix Y S VUM 33-05 Power MOSFET Stage for Boost Converters I d 25 V Ds s R DS on Module for Power Factor Correction V RRM (Diode) V DSS V V 600 500 5 Type • VUM 33-05N v DSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kfì Continuous

Contextual Info: nixY S VUM 24-05 Power MOSFET Stage for Boost Converters ^D25 V Dss ^D S o n Module for Power Factor Correction V RRM (Diode) V DSS V V 600 500 5 T ype I v DSS V DGR V GS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 k fì Continuous A A A 170 W

Contextual Info: SKKT 15, SKKH 15 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 0 Thyristor / Diode Modules LMNO LMMO= LDMO L XVV ¥VV TAVV TBVV L @VV UVV TCVV TRVV PISL Q TB S G*2 > TUVW I5 Q XB YEH NZZI TB[V@? NZZ$ TB[V@? NZZI TB[VU? NZZ$ TB[VU? NZZI TB[TC? NZZ$ TB[TC? NZZI TB[TR?

tea 2030

Abstract: K851 S72 MOS TC-6101 MP 6101 2SK704 S300
Contextual Info: M O S Field Effect P ow er Transistor 2SK704 N f t ^ ^ '7 -M O S X 4 'y * - > FET ? m l i f f l 2SK704 lì, F E T T , 5 V B ? g # J C <0 x 4 -v & > th tn z ^ h t , w mm m x t- t. x ^ i -y-f > i — VU S 4 \\ y> -f<7)M'ffî l~f t T to f t m O f & t > ffiÎJÏT '^ o

diode d502

Abstract: diode Schottky D501
Contextual Info: AN3303 Application note Secondary-side rectification for an LLC resonant converter featuring the SRK2000 Introduction The EVLSRK2000 is a family of demonstration boards designed for the evaluation of the SRK2000 in LLC resonant converters with synchronous rectification SR .

SRK2000

Abstract: DIODE C502 SRK2000D AN2644 ic U501 330 smd AN3303 d502A STL85N6F3 stl140n4
Contextual Info: AN3303 Application note Secondary-side rectification for an LLC resonant converter featuring the SRK2000 Introduction The EVLSRK2000 is a family of demonstration boards designed for the evaluation of the SRK2000 in LLC resonant converters with synchronous rectification SR .

TDM 5510

Abstract: POWER MOSFET Rise Time 1000V NS v85 diode OM1N100SA OM1N100ST OM3N100SA OM3N100ST OM5N100SA OM6N100SA diode 35 a
Contextual Info: OM1N-IOOSA O M 5N 100S A O M 1N 100S T 0M 3N1OOSA O M 6 NIOOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching

Contextual Info: VN02N High side smart power solid state relay Features Type VDSS RDS on IOUT VCC VN02N 60 V 0.4 Ω 6A 26 V • Output current (continuous): 6A @ Tc=25°C ■ 5V logic level compatible input ■ Thermal shutdown ■ Under voltage shutdown ■ Open drain diagnostic output

JESD97

Abstract: VN02N
Contextual Info: VN02N High side smart power solid state relay Features Type VDSS RDS on IOUT VCC VN02N 60 V 0.4 Ω 6A 26 V • Output current (continuous): 6A @ Tc=25°C ■ 5V logic level compatible input ■ Thermal shutdown ■ Under voltage shutdown ■ Open drain diagnostic output

L6743D

Contextual Info: L6743D High current MOSFET driver Features • Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ Integrated bootstrap diode ■ High frequency operation ■ Enable pin ■ Adaptive dead-time management