1SS360 Search Results
1SS360 Datasheets (16)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 1SS360 | Toshiba | Japanese - Diodes | Original | 315.09KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS360 | Toshiba | Diode - Silicon Epitaxial Planar Type | Original | 158.34KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS360 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 80.43KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS360 | Unknown | The Diode Data Book with Package Outlines 1993 | Scan | 84.29KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS360 | Toshiba | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) | Scan | 130.08KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS360 | Toshiba | DIODE | Scan | 130.08KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS360F | Toshiba | Diode | Original | 158.99KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS360(F) | Unknown | Silicon Diode | Scan | 123.15KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS360F | Toshiba | Scan | 123.16KB | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS360FV | Toshiba | Diode Silicon Epitaxial Planar Type | Original | 207.04KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS360FV | Toshiba | 1SS360 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, LEAD FREE, VESM, 1-1Q1B, 3 PIN, Signal Diode | Original | 223.04KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS360,LJ(CT | Toshiba America Electronic Components | DIODE SW 80V 100MA SSM | Original | 290.66KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS360(T5L,F,T) | Toshiba Semiconductor and Storage | Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY GP 80V 100MA SC75 | Original | 283.5KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS360T5LFT | Toshiba | Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 80V 100MA SSM | Original | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS360TE85L | Toshiba | 1SS360 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode | Original | 223.04KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS360TE85R | Toshiba | 1SS360 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode | Original | 223.04KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS360 Price and Stock
Toshiba America Electronic Components 1SS360,LJ(CB1SS360,LJ(CB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1SS360,LJ(CB | 3,000 | 1,563 |
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1SS360,LJ(CB | 2,400 |
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Toshiba America Electronic Components 1SS360,LJ(CTDiode Switching Si 85V 0.1A 3-Pin SSM T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1SS360,LJ(CT | 1,040 | 45 |
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1SS360,LJ(CT | Tape & Reel | 16 Weeks | 3,000 |
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1SS360,LJ(CT | Tape & Reel | 2,995 | 100 |
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| 1SS360,LJ(CT | Cut Tape | 2,995 | 1 |
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1SS360,LJ(CT | Reel | 3,000 |
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Toshiba America Electronic Components 1SS360(TE85L,F)Diode Switching Si 85V 0.1A 3-Pin SSM T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1SS360(TE85L,F) | 136 | 136 |
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| 1SS360(TE85L,F) | 95 | 95 |
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1SS360(TE85L,F) | 1,471 |
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Samtec Inc MTMM-115-11-S-S-360Pin Header, Mtmm-115-11-S-S-360; |Samtec, Inc. MTMM-115-11-S-S-360 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MTMM-115-11-S-S-360 | Bulk | 1 |
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MTMM-115-11-S-S-360 |
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MTMM-115-11-S-S-360 |
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Samtec Inc MTMM-110-11-S-S-360Pin Header, Mtmm-110-11-S-S-360; |Samtec, Inc. MTMM-110-11-S-S-360 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MTMM-110-11-S-S-360 | Bulk | 1 |
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MTMM-110-11-S-S-360 |
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MTMM-110-11-S-S-360 |
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1SS360 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 1SS360F T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS360F ULTRA HIGH SPEED SWITCHING APPLICATIONS Small Package Excellent in Forward Current Characteristics Fast Reverse Recovery Time Small Total Capacitance : 1608 Flat Lead and Forward Voltage |
OCR Scan |
1ss360f | |
1SS360FContextual Info: 1SS360F TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360F Ultra High Speed Switching Applications Unit in mm Small package : 1608 Flat lead Excellent in forward current and forward voltage characteristics : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) |
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1ss360f | |
1SS360FContextual Info: 1SS360F TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360F Ultra High Speed Switching Applications Unit in mm l Small package : 1608 Flat lead l Excellent in forward current and forward voltage characteristics : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) |
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1ss360f | |
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Contextual Info: 1SS360 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360 Ultra High Speed Switching Application Unit: mm l Small package l Low forward voltage : VF = 0.92V typ. l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ.) |
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1ss360100ma | |
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Contextual Info: 1SS360F TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360F Ultra High Speed Switching Applications Unit in mm l Small package : 1608 Flat lead l Excellent in forward current and forward voltage characteristics : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) |
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1ss360f | |
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Contextual Info: 1SS360F T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS360F ULTRA HIGH SPEED SWITCHING APPLICATIONS Small Package : 1608 Fiat Lead Excellent in Forward Current and Forward Voltage VF 3 = 0.92 V (Typ.) Characteristics Fast Reverse Recovery Time trr = 1.6 ns (Typ.) |
OCR Scan |
1ss360f | |
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Contextual Info: 1SS360F TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360F Ultra High Speed Switching Applications Unit in mm z Small package : 1608 Flat lead z Excellent in forward current and forward voltage characteristics : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) |
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1ss360f | |
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Contextual Info: 1SS360 T O SH IB A 1SS360 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • . ± 0.2 16 Small Package Low Forward Voltage : V f = 0.92V Typ. Fast Reverse Recovery Time : trr= 1.6ns (Typ.) Small Total Capacitance |
OCR Scan |
1ss360961001eaa2 | |
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Contextual Info: 1SS360 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360 Ultra High Speed Switching Application Unit in mm Small package Low forward voltage : VF = 0.92V typ. Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Maximum Ratings (Ta = 25°C) |
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1ss360961001eaa2 | |
1SS360Contextual Info: 1SS360 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360 Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage : VF = 0.92V typ. z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) |
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1ss360 | |
1SS360FVContextual Info: 1SS360FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360FV Ultra-High-Speed Switching Applications 0.22±0.05 Unit: mm Excellent in forward current and forward voltage characteristics : VF 3 = 0.92 V (typ.) 0.4 Lead (Pb) - free 0.8±0.05 1 0.4 : CT = 2.2 pF (typ.) |
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1ss360fv | |
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Contextual Info: 1SS360 SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package VF = 0.92V Typ. Low Forward Voltage Fast Reverse Recovery Time tr r = 1.6ns (Typ.) CT =2.2pF (Typ.) Small Total Capacitance 2 -E9- MAXIMUM RATINGS (Ta = 25°C) |
OCR Scan |
1ss360 | |
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Contextual Info: 1SS360 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360 Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage : VF = 0.92V typ. z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) |
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1ss360 | |
1SS360Contextual Info: 1SS360 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360 Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage : VF = 0.92V typ. z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) |
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1ss360 | |
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1SS360FContextual Info: 1SS360F TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS360F Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS 1.6 ± 0.1 0.85 ±0.1 Small Package : 1608 Fiat Lead Excellent in Forward Current and Forward Voltage Characteristics VF 3 —0.92 V (Typ.) |
OCR Scan |
1ss360f | |
1SS360Contextual Info: 1SS360 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360 Ultra High Speed Switching Application Unit: mm Small package Low forward voltage : VF = 0.92V typ. Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Maximum Ratings (Ta = 25°C) |
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1ss360 | |
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Contextual Info: 1SS360 TOSHIBA 1SS360 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • 1.6 ± 0.2 Small Package Low Forward Voltage : V f = 0.92V Typ. Fast Reverse Recovery Time : trr= 1.6ns (Typ.) Small Total Capacitance |
OCR Scan |
1ss360961001eaa2 | |
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Contextual Info: 1SS360F TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360F Ultra High Speed Switching Applications Unit in mm z Small package : 1608 Flat lead z Excellent in forward current and forward voltage characteristics : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) |
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1ss360f | |
1SS360Contextual Info: 1SS360 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360 Ultra High Speed Switching Application Unit: mm l Small package l Low forward voltage : VF = 0.92V typ. l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ.) |
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1ss360 | |
1SS360Contextual Info: TOSHIBA 1SS360 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS360 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • 1.6± 0.2 Small Package Low Forward Voltage : Vjn = 0.92V Typ. Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance |
OCR Scan |
1ss360961001eaa2 | |
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Contextual Info: TOSHIBA 1SS360 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE < ; 1 < ; a 3 n U nit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. 1.6db 0.2 • Sm all Package • Low Forward Voltage • F a st Reverse Recovery Time : trr = i.6 n s Typ. 0.8±0.1 ho : Vjr = 0.92V (Typ.) |
OCR Scan |
1ss36001//f961001eaa2 | |
2N3904 331 transistor
Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
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OCR Scan |
2n39032n39042n39052n3906+16 | |
SCJ0004N
Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
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scj0004ntpc6k01hmg01crg02+14 | |
lm2804
Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
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bce0030cs-167bce0030dlm2804+9 | |