ST 718 DIODE Search Results

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K

Contextual Info: O^OSD SERIES EVAR EXPONENTIAL VARACTOR 1M220 - 1M250 1T220 - 1T250 D0220 - D0250 fo r FREQUENCY-VOLTAGE LINEAR TUNING electronics^ Th e MSI Series 220 EV AR exponential varactor tuning diodeB feature a 7:1 mi ni mu m capa ci ta nc e tuni ng ratio from 0.5 to 10 volts for wi de

BB729

Abstract: E711
Contextual Info: ITT SEMICOND/ INTERMETALL blE D • mjfl5711 GGOaia? 714 M I S I BB729 Tuner Diode Silicon Epitaxial Planar Capacitance Diode with very wide effective capacitance variation for tuning the whole range of VHF CTV tuners. m a x 1.35 - T ”' r ^ r .1 -rmm 0 25

5E DIODE

Abstract: ND5051-3A ND5051-5E L427 microwave sensors RF Microwave schottky Diode mixer ND5051-3G noise diode
Contextual Info: NEC N E C / CALIFORNIA 15E D • b427414 OOOl'ilM 5 ■ X TO K-BAND G aAs SCHOTTKY BARRIER MIXER DIODE ND5051-3A ND5051-3G ND5051-5E FEATURES ABSOLU TE MAXIMUM RATINGS Ta • L O W N O IS E F IG U R E : 5 d B T Y P at f = 10 G H z SYM BO LS U N IT S R A T IN G S

BZX8SC15

Contextual Info: DO-41 Zener Diodes 1.3 W CPU Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified) Type No. rZT v ZT at lCT rZK at min nom max (V) !z k a t 'z K max (Ohm) (mA) max (Ohm) (mA) Temp. Coeff. of Zener Voltage typ (%/°C) @ lF Ir a* Vr Ta 25°C

IC 723 pin out diagram

Abstract: bts621l BTS 1200
Contextual Info: SIEMENS PROFET BTS 620 L1 Smart Two Channel Highside Power Switch Features • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection Including load dump Reverse battery protection1)

Contextual Info: • fl235b05 Q O ^ Q O b AM? ■ SIEMENS PROFET BTS 620 L1 Smart Two Channel Highside Power Switch • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump Reverse battery protection1)

Contextual Info: LT-3/94 electronics EVAR EXPONENTIAL VARACTOR SERIES for 1M220 - 1M250 1T220 - XT250 D022D - D0250 FREQUENCY-VOLTAGE LINEAR TUNING inc. - X " — 1— v. D024I 's \ N K323Í — In axial leaded glass DO-7, in the surface mount MSI Case 1M alumina substrate with epoxy encapsulation or in the surface mount MSI-123

N755

Abstract: 1N74I
Contextual Info: 1N 746 thru 1N 759A and 1N 4 370 thru 1N 4372A DO-7 liifiwuiAifif /Vvm imcraserm burp. M ' c u s n u f ca ll T o r me 6 02 941-6300 1% and 2% V E R S IO N S “C ” and “ D” A V A IL A B L E SILICON 400 mW ZENER DIODES FE A T U R E S • Z E N E R V O L T A G E 2.4V to 12.0V

RD6120

Contextual Info: RHRD6120, RHRD6120S fil IH A R R IS U U S E M I C O N D U C T O R 6A, 1200V Hyperfast Diodes March 1995 Features Package • Hyperfast with Soft R eco • Operating Tem p eratu

lucent photodetector

Abstract: 7495 pin configuration photodetector photodetectors D171C004BAA D171C004BAF D171C004CAN TR-NWT-000468 Diode BA 148
Contextual Info: Advance Data Sheet March 1999 D171-Type FastLight PIN Photodetectors Features The D171-Type PIN Photodetectors feature a rear-illuminated planar diode structure with a low-capacitance 4-mil active area for maximum responsivity and speed. • Low-profil e, 4-lead mini-DIL pa ckage

diode 1NU

Abstract: equivalent of diode 1Nu diode 1NU 0 b 1NU 7 1nu toshiba
Contextual Info: TOSHIBA -CDISCRETE/OPTO} Sb DE [ ^ G ^ a S D POWER REGULATOR FOR LINE OPERATED TV APPLICATIONS. DD077Û1 ^ Unit in mm 02&OMAX. FEATURES: a 1.0 MAX . Excellent Vide Safe Operating Area c . 100 W.S at Tc=25°C , 0 1 .0 . Included Abalanche Diode. : Vz=55±10V

SIM 900 TE C

Abstract: chn 807 Diode BA 148
Contextual Info: Product Brief April 1998 group Lucent Technologies Bell Labs Innovations L7583A/B/C/D Line Card Access Switch Features • Sm all size/surface-m ount packaging ■ M onolithic IC reliability ■ Low im pulse noise ■ M ake-before-break, break-before-m ake operation

Contextual Info: NEC N E C / CALIFORNIA 15 E D • b427414 7 OOOl'ilM 5 ■ X TO K-BAND GaAs SCHO TTKY BA RRIER MIXER DIO DE ND5051-3A ND5051-3G ND5051-5E FEATURES ABSOLU TE MAXIMUM RATINGS Ta • L O W N O IS E F IG U R E : 5 d B TYP at f = 10 GHz SYM BO LS U N IT S R A T IN G S

640CT

Abstract: m3175 645CT
Contextual Info: PBYR635CT PBYR640CT PBYR645CT SCHOTTKY-BARRIER DOUBLE RECTIFIER DIO DES Low-leakage, platinum-barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended for use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and

Contextual Info: STGW40V60DF STGWT40V60DF 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series • Tail-less switching off 2 3 1 3 2 1 TO-247 • Low saturation voltage: VCE sat = 1.8 V (typ.)

GW40V60DF

Contextual Info: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution

Contextual Info: STGW40V60DF STGWT40V60DF 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Very high speed switching series • Tail-less switching off 2 3 3 1 2 1 • Low saturation voltage: VCE sat = 1.8 V (typ.)

Contextual Info: STGW40V60DF STGWT40V60DF 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series • Tail-less switching off 2 3 3 1 2 1 TO-247 • Low saturation voltage: VCE sat = 1.8 V (typ.)

GW40V60DF

Contextual Info: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution

Contextual Info: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution

Contextual Info: 2SK1948 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current No Secondary Breakdown Suitable for Sw itching regulator, M otor Control Outline 716 2SK1948

F10014

Abstract: ECL Handbook F10506 ECL 200 F10105 f10107 F10-100 f10504
Contextual Info: F10014 ACTIVE TERMINATOR F10K VOLTAGE COMPENSATED ECL G E N ER A L D ESC R IP TIO N — The F10014 Is a voltage com pensated ECL circuit w h ich replaces discrete diode clam ping circuits at considerable reduction in cost, board space and power dissipation. It operates from the standard - 5 . 2 V ECL