ST 13007 Search Results

13007

Abstract: transistor 13007 13007 TRANSISTOR NPN Transistor 13007 ST 13007 A 13007 applications
Contextual Info: ST 13007 NPN Silicon Transistor for high-voltage, high-speed power switching . TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage

13007 TRANSISTOR

Abstract: transistor 13007 13007 NPN Transistor 13007 ST-13007 ST 13007 A 13007* transistor 13007 NPN Transistor 13007 2 transistor
Contextual Info: ST 13007 NPN Silicon Transistor for high-voltage, high-speed power switching . TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage

13007

Abstract: Transistor 13007 13007 TRANSISTOR 13007* transistor 13007 npn NPN Transistor 13007 ST 13007 A W+13007+TRANSISTOR
Contextual Info: ST 13007 NPN Silicon Transistor for high voltage, high-speed power switching application TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage

transistor 13007

Abstract: 13007 13007 TRANSISTOR NPN Transistor 13007 ST-13007 APPLICATION 13007 2 transistor ST 13007 A 13007* transistor 13007 switching application F 13007
Contextual Info: ST 13007 NPN Silicon Transistor for high voltage, high-speed power switching application TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage

transistor 13007

Abstract: NPN Transistor 13007 13007 TRANSISTOR data sheet 13007 13007 13007* transistor 13007 applications transistor 13007 equivalents 13007 switching application 13007 npn
Contextual Info: ST 13007 NPN Silicon Transistor for high voltage, high-speed power switching application TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage

Contextual Info: 13007 ST AN DARD • · TO-220 A Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current DC IC 8 A TA=25 PC 2 W TC=25 PC 80 W Junction Temperature TJ 150 Storage Temperature TSTG -55-150 Collector Dissipation

transistor E 13007

Abstract: 13007 m FAIRCHILD E 13007 T 13007 13007 2 transistor *e13007 FAIRCHILD E 13007- 1 E 13007 0
Contextual Info: KSE13006/13007 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Sw itching • Suitable fo r Sw itching R egulator and M otor Control ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : KSE13006 Rating VcBO

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

EEL-19

Abstract: TB 1226 EN aes 1136 HC EEL-19 ANI 1015 KSS 1206 TRW 1179
Contextual Info: IQUAL'IK ICA I ION I RE QUIREMENTS I REMOVED M I L- M- 38 51 0/ 40 1A 9 Auaust 1983 Tiimrmmnr MIL-M-38510/40HUSAF 22 October 1981 | | I MILITARY SPECIFICATION MICROCIR CU IT S, DIGITAL, N-CHANNEL, S IL ICON-GATE , MO NO LI TH IC PERIPHERAL INTERFACE ADAPTER

12V6GT

Abstract: 6V6GT B585 6v6gta tube data 6V6GTA 12V6-GT
Contextual Info: Sylvania Technical Manual 384 R A T IN G S D e sign Center Rating Sy ste m Dam per Service«) Peak Inverse Plate Voltage (Abs. Max.)») . Plate D is s ip a t io n . Steady State Peak Plate C urrent .

HT 1000-4 power amplifier

Abstract: triac tag 8739 H48 zener diode TRIAC TAG 8812 Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris transistor f6 13003 OM370
Contextual Info: TECHNICAL MANUAL SigmaPLUS IOT Transmitters I Introduction II Installation & Checkout III Operation IV Theory of Operation V Maintenance & Alignments VI Troubleshooting VII Parts List VIII Subsections T.M. No. 888-2430-001 Copyright HARRIS CORPORATION

IESS-308 sCRAMBLER

Abstract: BIT 31936 scrambler satellite v.35 Viterbi Trellis Decoder texas IESS309 IESS-309 33-/BIT 31936
Contextual Info: VLSI Tech n o lo gy , in c . VP17018 RPFEC FORWARD ERROR CORRECTION CIRCUIT FEATURES • Optional selection of differential encoding/decoding insertion for operation at code rates up to 7/8 • Integrates a full-featured convo­ lutional encoder and a Viterbi

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

6lb6

Abstract: E12-74 13007-2 E1274
Contextual Info: Color Television Type HORIZONTAL DEFLECTION AMPLIFIER 6LB6 Beam Power Pentode C on stru ction. Com pactron T-12 B a se .Button 12 Pin, E12-74 Top C a p .Cl-1 B a s i n g . 126J

TRANSISTOR PNP B1443

Abstract: B1565 transistor B1274 transistor 13001 s 6d B1273 transistor B0615 DIODE Transistor B1203 transistor b1274 transistor b1134 transistor B1204
Contextual Info: Version 1.7 Produced in June 1998 Sharp Programmable Controller New Satellite JW20H Programming Manual * Ladder instruction version 04000 F — 44 O I F — 08 1 O C T 100 09000 0000 09000 F — 00 X F E R □ F — 05 D M P X F — 63 IN C 09000 09000 09000

SD 1083

Contextual Info: S D 1 87 l5 Q - * » 0 0 DWG-N0" .0 4 7 - .0 6 3 FILE CAD SB7 I3Q.DGN D IS C RE TE WIRE FLAT -L -L INCH 87 130-0200 2.50 .098 7.50 .295 87 130-0300 5.00 .197 10.00 .394 87 130-0400 7.50 .295 12.50 .492 87 130-0500 10.00 .394 15.00 .591 87 130-0600 12.50 .492

6W4GT

Abstract: B585 25W4GT 25W4-GT
Contextual Info: DAMPER 6W4GT 25W4GT H e a t e r - C a t h o d e D io d e Construction . Octal T-9 B a se . Octal 5 or 6 Pin, B5-82 B5-85, B6-8 or B6-60 B a sin g ' . 4CG O utline . 9-11 or 9-41

vertical deflection oscillator in television

Abstract: 12BH7A 12BH7-A 12BH7
Contextual Info: Color Television Type 12BH7A VERTICAL or HORIZ. DEFLECTION OSCILLATOR and AMPLIFIER Double Low Mu Triode Construction . M iniature T-6V4 Base . Button 9 Pin, E9-1 B a s i n g ^ .9A

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CJE13007 TO-220 Plastic Package Used in Energy Saving Lights and Power Switching Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

13007E

Abstract: TRANSISTOR 13007a 13007B
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13007 TO-220 Plastic Package Used in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

MJE13007

Abstract: MJE-13007 13006 TRANSISTOR mje13007 TRANSISTOR MJE13006 transistor 13006 MJE13007Q
Contextual Info: [ [ ^^53131 Q Q n i 3 1 D EV ELO P M EN T DATA a MJE13006 MJE13007 T his data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D T-33-I3 SILICO N DIFFUSED POWER TRAN SISTO R High-voltage, high-speed glass-passivated npn power transistor in a T 0 -2 2 0 envelope, intended for use

E13007

Abstract: E 13007 F13007 F 13007 SEC E 13007 - 2 transistor MJ 13007 equivalent 13007 je13007 mj 13007 transistor E 13007
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE13007 M JF13007 Designer’s Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V

pnwf

Contextual Info: U2733B-C Fractional-N Frequency Synthesizer for DAB Tuner Description The U2733B-C is a monolithic integrated fractional-N frequency synthesizer circuit fabricated in TEMIC’s advanced UHF5S technology. Designed for applications in DAB receivers, it controls a VCO to synthesize

c828

Abstract: tr c828 c877 ED6A cm 480b ed7a c828 as time relay iwatt marking EB 13007 c828 equivalent
Contextual Info: I I MI L-M-38510/480B 14 A p ril 1983 SUPERSEDING M I L - H - 3 8 5 10 /4 80 A 4 September 1981 MILITARY SP ECI FI C AT I ON MI CROCI RCUITS, D I G I T A L , MONOLITHIC 8 N-CHANNEL, SI LI CON GATE - B I T MICROPROCESSOR T h i s s p e c i f i c a t i o n i s a ppr ove d f o r us e by a l l