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    50n05

    Abstract: 150N06 SSW50N05 SSW50N06 SSI50N06 150N0 SSI50N05 of 50N05
    Contextual Info: N-CHANNEL POWER MOSFETS SSW50N06/05 SSI50N06/05 FEATURES D*-PAK • Lower Rds<on • Improved Inductive Ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		ssw50n06/05ssi50n06/05ssw50n06/150n06ssw50n06/i50n05+10ssw50n06/50n05ssi50n06/50n05ssw50n06ssi50n06ssw50n05ssi50n0550n05150n06150n0of 50n05 PDF

    irfm014

    Abstract: 100-4 k d 998 SSI50N06 IRFM014 sot223 IRFIZ30 g 995
    Contextual Info: FUNCTION GUIDE MOSFETs SOT-223 N-CHANNEL BVdss V lo|on)(A) Ros(on)( g ) W!¡a(K/W) PD(Watt) Page IRFM014 60 2.70 0.200 40.000 3.1 986 NEW IRFM110 100 1.50 0.540 40.000 3.1 989 NEW B V d s s (V) lD(on)(A) Ros(on)(Q) R0jc(K/W) PD(Watt) Page IRFWZ10 IRFWZ20


    OCR Scan     		ot-223irfm014irfm110irfwz10+12irfwz20irfwz30irfwz40ssw50n05ssw60n05irfwz14100-4k d 998ssi50n06irfm014 sot223irfiz30g 995 PDF