SSS2 Search Results

SSS2321

Abstract: mosfet 1216 RL640 720 mosfet sot23 D2123
Contextual Info: SSS2321 P-Channel Enhancement Mode MOSFET SOT-23 Product Summary RDS ON (mΩ) Max ID (A) D 21 23 VDS (V) YW 60 @VGS = -4.5V G 80 @VGS = -2.5V -3.4A -20V S 125 @VGS = -1.8V D FEATURES ȟ!Super high dense cell design for low RDS(ON). ȟ!Rugged and reliable.

tjm sot23

Contextual Info: SSS2304 N-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-23 RDS(ON) (mΩ) Max ID (A) D 55 @VGS = 4.5V G 80 @VGS = 2.5V 3.2A 20V S 120 @VGS = 1.8V D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.

Contextual Info: SSS2312A N-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-23 RDS(ON) (mΩ) Max ID (A) D 33 @VGS = 4.5V 3.77A 20V G 40 @VGS = 2.5V S 51 @VGS = 1.8V D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.

SSS2N80A

Contextual Info: Advanced SSS2N80A Power MOSFET FEATURES BV DSS = 800 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge lD = 1 .5 A ■ E xtended S afe O pe ra ting A rea

Contextual Info: SSS2N60A Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 p A Max. @ VDS= 600V

D065A

Abstract: SSS2n60 SSS2N60A MOSFET IRF VDs 600v
Contextual Info: SSS2N60A Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 5 Q ■ Lower Input Capacitance lD = 1.3 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 ¡iA (Max.) @ VDS = 600V

ALPS DPDT

Abstract: ALPS DP3T
Contextual Info: Slide Switch - Horizontal & Vertical Operation | Features NEW PRODUCTS Minature Slide Switch in Horizontal, Vertical, SMD Types 2 mm Travel, 3.5 mm in Body Height, 2 mm Knob Length Available in SPDT, DPDT, SP3T, DP3T Configurations S SSS2 - Rating: 0.3 A 6 vdc

SSS2N80A

Contextual Info: SSS2N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 6.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 µA (Max.) @ VDS = 800V

ion-e

Contextual Info: AH ^ -tTA 7 5 2 3 - S / « CPRJNT .D IST. I )ISTR IBUZ IONE! 070 Sr. MULTILOCK* CONN. SIZE NUMERO DWG NO) A3 C — 282632 A J*~1YA 7 S 2 3 - SSS2 REV. F0GL10 (SHEET) uu HEADER, 20 POSITION HORIZONTAL TYPE 2 <0F)A A M B I T A 7 5 3 3 - S 'S S d is t .j I )ISTR 18UZI ONEl

Contextual Info: Temic SSS2600 S e m i c o n d u c t o r s GaAs IR Emitting Diode in Side View Miniature Package Description T SSS2600 is a m iniature infrared em itting diode in G aA s on G aA s technology, m olded in a clear, untinted plastic package w ith cylindrical side view lens.

SPF10

Contextual Info: SSS2202 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) (m ) Max D 200 @VGS = 4.5V 20V 1.4A G 300 @VGS = 2.5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb Free. o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)

MOSFET N SOT-23

Contextual Info: SSS2N7002K N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-23 RDS(ON) D 3.0 @VGS = 10V G 4.0 @VGS = 5V S D FEATURES Super high density cell design for low RDS(ON). Gate-source ESD protection diodes. Rugged and reliable. G SOT-23 package.

SSS2301A

Abstract: sot-23 P-Channel MOSFET
Contextual Info: SSS2301A P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) -20V -2.3A SOT-23 RDS(ON) (mΩ) Max D 130 @VGS = -4.5V G 190 @VGS = -2.5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb free.

MOSFET N SOT-23

Abstract: DS1060
Contextual Info: SSS2N7002E N-Channel Enhancement Mode MOSFET Product Summary ID A RDS(ON) (Ω) Max D YW 02 3.0 @VGS = 10V 0.25A 60V 70 VDS (V) SOT-23 G 4.0 @VGS = 5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb Free.

D065A

Contextual Info: Advanced SSS2N60A Power MOSFET FEATURES BVDSS - 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 1-3 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 600V

sss5N90

Abstract: IRFS9Z34
Contextual Info: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Continued B V dss (V) lo(on)(A) SSS3N 70 SSS4N 70 SSS5N 70 700 1.80 2.30 2.70 5.000 3.500 2.500 SSS3N 80 SSS4N 80 SSS5N 80 800 1.80 2.30 2.70 SSS2N 90 SSS3N 90 SSS4N 90 SSS5N 90 900 1.80 2.00 2.50 2.80

ssp2n60b

Abstract: SSS2N60B SS*2n60b 20ISM
Contextual Info: SSP2N60B/SSS2N60B SSP2N60B/SSS2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

sss2n7002

Contextual Info: SSS2N7002 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-23 RDS(ON) ( ) Max D 5.0 @VGS = 10V G 7.5 @VGS = 5V S D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb Free. o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)

SSS2N60A

Contextual Info: SSS2N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.3 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 µA (Max.) @ VDS = 600V

Contextual Info: Speaker and Control Cable Multi-Conductor, Shielded, Riser NEC Type CL3R UL and/or NEC Type CMR (UL) c(UL) RISER CABLE - SR-PVC INSULATION, PVC JACKET CATALOG NUMBER Nom. Insulation NO. OF AWG COND. COND. SIZE STRAND SSS222R SSS224R 2 4 22 22 7/30 7/30 SSS202R

SSS2N90

Abstract: 250M
Contextual Info: N-CHANNEL POWER MOSFETS SSS2N90 FEATURES • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: SSS2N90A Advanced Power MOSFET FEATURES BVDgs - 900 V • Avalanche Rugged Technology 7.0 Q ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 1-5 A ■ Improved Gate Charge ■ Extended Safe Operating Area T 0 -2 2 0 F ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 900V

SSS2209

Abstract: sot-23 P-Channel MOSFET
Contextual Info: SSS2209 P-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-23 RDS(ON) (mΩ) Max ID (A) D 170 @VGS = -4.5V -2.0A -20V G 240 @VGS = -2.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.

Contextual Info: SSS2N7002L N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) ( ) Max D 3.0 @VGS = 10V 60V G 4.0 @VGS = 5V 0.25A S 7.5 @VGS = 2.5V D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. SOT-23 package.