SSM99 Search Results

Contextual Info: SSM9936GM Dual N-channel Enhancement-mode Power MOSFETs BVD2 Simple drive requirement D2 Lower gate charge D1 D1 Fast switching characteristics R I G2 S2 Pb-free; RoHS compliant. SO-8 S1 BVDSS 30V R DS ON 50mΩ ID 5A G1 DESCRIPTION Advanced Power MOSFETs from Silicon Standard provide the

SSM9977GH

Abstract: ssm9977gj
Contextual Info: SSM9977GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge D Simple drive requirement Fast switching BV DSS 60V R DS ON 90mΩ 11A ID G S Description G D S The SSM9977GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited

2N AND 2P-CHANNEL ENHANCEMENT

Abstract: SSM9934GM ssm9934
Contextual Info: SSM9934GM 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS P2G N2D/P2D Simple Drive Requirement Low On-resistance Full Bridge Application on LCD Monitor Inverter 35V RDS ON P1S/P2S P1G ID N2G N1S/N2S 4.3A P-CH BVDSS N1D/P1D SO-8

SSM9926GM

Abstract: 9926gm marking codes transistors SSs
Contextual Info: SSM9926GM Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY BVDSS 20V R DS ON 30mΩ ID 6A DESCRIPTION The SSM9926GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC

9918h

Abstract: SSM9918H
Contextual Info: SSM9918H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance D Capable of 2.5V gate drive BV DSS 20V R DS ON 14mΩ ID Low drive current 45A G Surface mount package S Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching,

ssm9915k

Contextual Info: SSM9915K N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple drive requirement D Lower gate charge Fast switching characteristic BVDSS 20V RDS ON 50mΩ 6.2A ID S D SOT-223 G Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching,

SSM9916H

Contextual Info: SSM9916H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance D Capable of 2.5V gate drive Low drive current 18V RDS ON 25mΩ 35A ID G Simple drive requirement BV DSS S Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching,

Contextual Info: SSM9960M DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance D2 D2 Fast switching speed D1 D1 Surface-mount package G2 S2 SO-8 S1 BV DSS 40V R DS ON 20mΩ ID 7.8A G1 Description D2 D1 Advanced power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching,

SSM99

Contextual Info: SSM9977 G H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge D Simple drive requirement Fast switching BV DSS 60V R DS(ON) 90mΩ 11A ID G S Description G D S The SSM9977H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited

Contextual Info: SSM9928O N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D1 Low on-resistance G1 D2 G2 Capable of 2.5V gate drive Optimal DC/DC battery application S1 S2 DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast

SSM9985GM

Contextual Info: SSM9985GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Low On-Resistance Fast Switching Speed Surface Mount Package D D D D S 40V RDS ON 15mΩ ID G SO-8 BVDSS 10A S S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast

ssm9971GM

Abstract: 9971gm ssm2310gm 9971 marking codes transistors SSs SSM-2
Contextual Info: SSM9971GM Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY BVDSS 60V R DS ON 50mΩ ID 5A DESCRIPTION The SSM9971GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC

SSM9980M

Contextual Info: SSM9980M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 D2 Lower gate charge D1 D1 Fast switching characteristics S1 80V R DS ON 52mΩ 4.6A ID G2 S2 SO-8 BV DSS G1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the

SSM9962M

Abstract: SSM9962
Contextual Info: SSM9962M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 D2 Lower gate charge D1 D1 Fast switching characteristics S1 40V R DS ON 25mΩ 7A ID G2 S2 SO-8 BV DSS G1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the

Full-bridge inverter

Abstract: SSM9930M
Contextual Info: SSM9930M DUAL N- AND DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Low on-resistance Full-bridge applications, such as N-CH P2G N2D/P2D P1S/P2S P1G LCD monitor inverter N1D/P1D SO-8 30V R DS ON 33mΩ 6.3A ID N2G N1S/N2S BV DSS P-CH

MOS FET SOT-223

Abstract: MMS9973
Contextual Info: SSM9973 Elektronische Bauelemente 3.9A, 60V,RDS ON 80mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product S OT -223 f f０ 5 Description 5  f ＋０．１５ －０．２５ f   fe e efe

ssm9973gj

Abstract: RD33
Contextual Info: SSM9973GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge D Simple drive requirement Fast switching BV DSS 60V R DS ON 80mΩ 14A ID G S Description G D S The SSM9973GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited

Contextual Info: SSM9922 G EO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive G2 S2 Ideal for DC/DC battery applications D2 BV DSS 20V RDS(ON) 15mΩ 6.8A ID S2 TSSOP-8 S1 G1 S1 D1 Description D1 Power MOSFETs from Silicon Standard provide the

9971GD

Abstract: SSM9971GD SSM2310GD marking CODE D2 DIODE SSM-2 9971g
Contextual Info: SSM9971GD Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY BVDSS 60V R DS ON 50mΩ ID 5A DESCRIPTION The SSM9971GD acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC

SSM9960M

Abstract: ssm9960
Contextual Info: SSM9960M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 D2 Lower gate charge D1 D1 Fast switching characteristics S1 40V R DS ON 20mΩ 7.8A ID G2 S2 SO-8 BV DSS G1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the

SSM9987GM

Contextual Info: SSM9987GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 Low Gate Charge Single Drive Requirement Surface Mount Package D1 D2 D1 G2 SO-8 S1 80V RDS ON 90mΩ ID S2 DESCRIPTION BVDSS 3.5A G1 The advanced power MOSFETs from Silicon Standard Corp.

Contextual Info: SSM9921 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 8 RDS(ON) (mΩ) Max 7 6 5 50 @VGS = -4.5V -4.5A -20V 1 80 @VGS = -2.5V 2 3 4 160 @VGS = -1.8V D2 (5, 6) D1 (7, 8) FEATURES Super high density cell design for low RDS(ON). Rugged and reliable.

SSM9971GH

Abstract: mosfet VDS 30V ID 18A TO 252 ssm9971gj
Contextual Info: SSM9971GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge D Simple drive requirement Fast switching BV DSS 60V R DS ON 36mΩ 25A ID G S Description G D S The SSM9971GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited

SSM9977M

Abstract: SSM9977GM
Contextual Info: SSM9977M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 D2 Lower gate charge D1 D1 Fast switching characteristics BV DSS 60V R DS ON 90mΩ 3.5A ID SO-8 G1 S1 G2 S2 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the