SSM3K333R Search Results

Contextual Info: SSM3K333R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOS VII-H SSM3K333R Power Management Switch Applications High-Speed Switching Applications Unit: mm +0.08 4.5V drive • Low ON-resistance: RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V) 0.05

Contextual Info: SSM3K333R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOS VII-H SSM3K333R ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm +0.08 0.05 M A 0.42 -0.05 +0.08 0.17 -0.07 • Low ON-resistance: RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V)

SSM3K333R

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary SSM3K333R Power MOSFET 6A, 30V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC SSM3K333R is an N-channel power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.

Contextual Info: SSM3K333R 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOS VII-H SSM3K333R ○ パワーマネジメントスイッチ ○ 高速スイッチング 4.5V 駆動です • オン抵抗が低い +0.08 0.05 M A 0.42 -0.05 : RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V)

Contextual Info: UNISONICTECHNOLOGIESCO., LTD SSM3K333R Preliminary Power MOSFET 6 A, 3 0 V N -CH AN N EL POWER M OSFET ̈ DESCRI PT I ON The UTC SSM3K333R is an N-channel power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.

marking kfk

Contextual Info: SSM3K333R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOS VII-H SSM3K333R ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm +0.08 • 4.5V drive • Low ON-resistance: RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V)

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

toshiba laptop charging CIRCUIT diagram

Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
Contextual Info: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5

TK12A10K3

Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
Contextual Info: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4

TK12A10K3

Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
Contextual Info: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3