SSG4 Search Results

SSG4462N

Abstract: MosFET
Contextual Info: SSG4462N 9.7 A, 60 V, RDS ON 22 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to

Contextual Info: SSG4520H N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.6 A, 20 V, RDS ON 47 m P-Ch: -5.2 A, -20 V, RDS(ON) 79 m Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs

SSG4520H

Abstract: MosFET
Contextual Info: SSG4520H N-Ch: 6.6A, 20V, RDS ON 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs

SSG4890N

Abstract: MosFET
Contextual Info: SSG4890N 1.4 A, 150 V, RDS ON 700 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to

Contextual Info: SSG4953 -5A, -30V,RDS ON 53mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 The SSG4953 provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.

SSG4530C

Abstract: MosFET
Contextual Info: SSG4530C N-Ch: 5.3A, 30V, RDS ON 82 mΩ Ω P-Ch: -5.2A, -30V, RDS(ON) 80 mΩ Ω N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs

SSG4463P

Abstract: MosFET
Contextual Info: SSG4463P P-Ch Enhancement Mode Power MOSFET -13.4A, -20V, RDS ON 11.5 m Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on)

mosfet 10V 10A

Abstract: STM4470
Contextual Info: SSG4470STM N-Ch Enhancement Mode Power MOSFET 10 A, 40 V, RDS ON 10 m Elektronische Bauelemente FEATURES    Super high dense cell design for low RDS(on). Rugged and reliable. Surface Mount Package. SOP-8 B PRODUCT SUMMARY VDSS(V) d 40 PRODUCT SUMMARY

Contextual Info: SSG4403 P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS ON 50 mΩ Ω Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION B The SSG4403 uses advanced trench technology to provide excellent on-resistance, low gate charge and

4228SS

Abstract: 24v 6A mosfet SSG4228 68A diode 6M40 26M 17A
Contextual Info: SSG4228 6.8A, 30V,RDS ON 26mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 45 The SSG4228 provide the designer with the best Combination of fast switching, o 0.375 REF 6.20

ID67A

Abstract: 4480N
Contextual Info: SSG4480N N-Ch Enhancement Mode Power MOSFET 7.1 A, 10 V, RDS ON 41 m Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical

P Channel Ultra Low Gate Charge

Abstract: Low Capacitance MOS FET P Channel Low Gate Charge 100A
Contextual Info: SSG4565 N Channel 7.6A, 40V,RDS ON 25mΩ P Channel 6.5A, 40V,RDS(ON) 33m Ω Elektronische Bauelemente Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 The SSG4565 provide the designer with the best combination of fast switching,

4407SC

Abstract: 107A diode 107A 4407
Contextual Info: SSG4407 -10.7A, -30V,RDS ON 14mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description The SSG4407 provide the designer with the best Combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

SSG4935P

Abstract: MosFET testing mosfet
Contextual Info: SSG4935P P-Ch Enhancement Mode Power MOSFET -7.8 A, -30 V, RDS ON 21 m Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on)

4953SS

Abstract: SSG4953 4953S mosfet vgs 5v 5a
Contextual Info: SSG4953 -5A, -30V,RDS ON 53mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOP-8 Description 0.19 0.25 0.40 0.90 The SSG4953 provide the designer with the best Combination of fast switching,

SSG4835P

Contextual Info: SSG4835P -9.5 A, -30 V, RDS ON 19 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on)

SSG4841P

Abstract: MosFET
Contextual Info: SSG4841P -9.0 A, -40 V, RDS ON 35 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to

Dual N-Channel MOSFET SOP8

Abstract: SSG4
Contextual Info: SSG4920N 6.9 A, 30 V, RDS ON 34 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize high cell density process

SSG4434N

Abstract: MosFET
Contextual Info: SSG4434N 18.6 A, 30 V, RDS ON 7 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical

J 115 mosfet

Contextual Info: SSG4463P P-Ch Enhancement Mode Power MOSFET -13.4 A, -20 V, RDS ON 11.5 m Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on)

Contextual Info: SSG4931 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TSSOP-8 8 RDS(ON) (mΩ) Max 7 6 5 45 @VGS = - 10V - 4.5A - 30V 1 75 @VGS = - 5V 90 @VGS = - 4.5V 2 3 4 D (1) D (8`) FEATURES Super high density cell design for low R DS(ON). Rugged and reliable.

Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A

Abstract: MOSFET TSSOP-8 dual n-channel
Contextual Info: SSG4910 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) RDS(ON) (m ) Max 7 6 5 17 @V GS = 10V 8.5A 30V TSSOP-8 8 28 @VGS = 4.5V 1 2 3 4 D (1) D (8`) FEATURES Super high density cell design for low RDS(ON) . Rugged and reliable. G (4)

SSG4512CE

Abstract: MosFET
Contextual Info: SSG4512CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS ON 31 mΩ Ω P-Ch: -5.2 A, -30 V, RDS(ON) 52 mΩ Ω Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a

SSG4940NC

Abstract: MosFET
Contextual Info: SSG4940NC 8.3A , 40V , RDS ON 23 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low