SRT12S Search Results

Contextual Info: SRT12 - SRT115 creat by art Pb 1.0AMP. Schottky Barrier Rectifiers TS-1 RoHS COMPLIANCE Features — Plastic material used carries Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency

1N5817-1N5819

Abstract: MBR4020PT-4060PT SR10-SR50 3060PT ERA81 004 ERC81 002 SB120 SB160 ERA81-002 ERB81-002 pbyr3035pt
Contextual Info: 5.肖特基整流二极管 序号 型号 IF VRRM VF A V V 外形 （1）肖特基塑封整流二极管 1 1N5817-1N5819 1A 20-40V 0.45-0.6 2 1N5820-1N5822 3A 20-40V 0.45-0.6 DO-201AD 3

Schottky

Contextual Info: SRT12 thru SRT115 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

srt12s

Abstract: SRT14
Contextual Info: SRT12 - SRT115 1.0 Amp. Schottky Barrier Rectifiers Pb Current 1.0 A Voltage 20 V to 150 V DO-41 Mini • Glass passivated chip junction. • High efficiency, Low VF • High current capability • High reliability • High surge current capability • Low power loss

Contextual Info: SRT12 thru SRT115 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: SRT12 thru SRT115 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: SRT12 thru SRT115 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: SRT12 - SRT115 1.0AMP. Schottky Barrier Rectifiers TS-1 Features ­ Plastic material used carries Underwriters Laboratory Classification 94V-0 ­ Metal silicon junction, majority carrier conduction ­ Low power loss, high efficiency ­ High current capability, low forward voltage drop

Contextual Info: SRT12 - SRT115 1.0 Amp. Schottky Barrier Rectifiers Pb Current 1.0 A Voltage 20 V to 150 V DO-41 Mini • Glass passivated chip junction. • High efficiency, Low VF • High current capability • High reliability • High surge current capability • Low power loss

SRT14

Abstract: srt12s
Contextual Info: SRT12 - SRT115 creat by art 1.0AMP. Schottky Barrier Rectifiers TS-1 Features — Plastic material used carries Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency — High current capability, low forward voltage drop