SRT115 Search Results

Contextual Info: SRT12 - SRT115 creat by art Pb 1.0AMP. Schottky Barrier Rectifiers TS-1 RoHS COMPLIANCE Features — Plastic material used carries Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency

Schottky

Contextual Info: SRT12 thru SRT115 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

SRT12

Contextual Info: RATINGS AND CHARACTERISTIC CURVES SRT12 THRU SRT115 Version: E10

srt12s

Abstract: SRT14
Contextual Info: SRT12 - SRT115 1.0 Amp. Schottky Barrier Rectifiers Pb Current 1.0 A Voltage 20 V to 150 V DO-41 Mini • Glass passivated chip junction. • High efficiency, Low VF • High current capability • High reliability • High surge current capability • Low power loss

Contextual Info: SRT12 thru SRT115 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: SRT12 thru SRT115 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

srt14

Abstract: SRT12 srt 14
Contextual Info: E SRT12 -SRT115 TAIWAN SEMICONDUCTOR 1.0 AMP. Schottky Barrier Rectifiers TS-1 RoHS COMPLIANCE -m - F e atures •fr ^ ❖ <' •X:vìa, MM. Plastic material used carries Unde w riters Laboratory Classification <WV-0 Metal si Iicon ju notion, majority earner cond uctio n

Contextual Info: SRT12 thru SRT115 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: SRT12 - SRT115 1.0AMP. Schottky Barrier Rectifiers TS-1 Features ­ Plastic material used carries Underwriters Laboratory Classification 94V-0 ­ Metal silicon junction, majority carrier conduction ­ Low power loss, high efficiency ­ High current capability, low forward voltage drop

Contextual Info: SRT12 - SRT115 1.0 AMP. Schottky Barrier Rectifiers TS-1 Features Plastic material used carries Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop

Contextual Info: SRT12 - SRT115 1.0 Amp. Schottky Barrier Rectifiers Pb Current 1.0 A Voltage 20 V to 150 V DO-41 Mini • Glass passivated chip junction. • High efficiency, Low VF • High current capability • High reliability • High surge current capability • Low power loss

SRT14

Abstract: srt12s
Contextual Info: SRT12 - SRT115 creat by art 1.0AMP. Schottky Barrier Rectifiers TS-1 Features — Plastic material used carries Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency — High current capability, low forward voltage drop

Contextual Info: SRT12 - SRT115 TAIWAN SEMICONDUCTOR s 1.0 AMP. Schottky Barrier Rectifiers TS-1 RoHS C O M PLIANCE Features •¿»lÄ, MM . P la s tic m a te ria l u s e d c a r rie s U n d e rw rite rs * * L a b o ra to ry C la s s ific a tio n <WV-0 M etal si I icon ju n o tio n , m a jo rity e a rn e r c o n d uctio n