SRM21016LL Search Results

SRM21016LLTT12

Abstract: 8ie22
Contextual Info: PF865-01 EPSON SRM21016LLTT i2 1 M-Bit Static RAM • W ide Voltage Operation and Low Current Consumption • Access Tim e 120ns 2.7V • 65,536 Words X 16-Bit Asynchtonous • W ide Tem perature Range I D E S C R IP T IO N The SRM21016LLTT12 is a 65,536 words x 16-bit asynchronous, random access memory on a monolithic

Contextual Info: PF807-06 SRM21016LLTX12/15 1M-Bit Static RAM ge ltan o V w tio Loperauct O rod P ● Wide Voltage Operation and Low Current Consumption ● Access Time 120ns/150ns 2.7V ● 65,536 WordsX16-Bit Asynchtonous ● Wide Temperature Range • DESCRIPTION The SRM21016LLTX12/15 is a 65,536 wordsx16-bit asynchronous, random access memory on a monolithic

Contextual Info: S R M 2 1 0 1 6 L L T X 1 2 /1 5 1M-BIT STATIC RAM • • W ide Voltage O peration and Low Current Consum ption • Access Tim e 120ns/150ns 2.7V • 65,536 W ords x 16-Bit Asynchronous • W ide Tem perature Range DESCRIPTION The SRM21016LLTX12/15 is a 65,536 words x 16-bit asynchronous, random access m em ory on a

Contextual Info: S R M 2 1 0 1 6 L L T T 1 2 1M-BIT STATIC RAM • • W ide Voltage O peration and Low Current Consum ption • Access Tim e 120ns 2.7V • 65,536 W ords x 16-Bit Asynchronous • Industrial Tem perature Range DESCRIPTION The SRM21016LLTT12 is a 65,536 w ords x 16-bit asychronous, random access m em ory on a m ono­

SRM21016LLTT12

Contextual Info: PF865-03 SRM21016LLTT12 1M-Bit Static RAM ge lta Vo ion w t Lo pera cts O odu Pr ● Wide Voltage Operation and Low Current Consumption ● Access Time 120ns 2.7V ● 65,536 Words X 16-Bit Asynchtonous ● Wide Temperature Range • DESCRIPTION The SRM21016LLTT12 is a 65,536 words x 16-bit asynchronous, random access memory on a monolithic

UPD444C

Abstract: SRM2264LC10 hm6116 SRM2264LCT10
Contextual Info: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238

SRM2A256SLC

Abstract: SRM20100LLM srm2264lct SRM2A256LLCT SRM20100LL SRM2264LC SRM2564C SRM20100LMT tl512 SRM20116
Contextual Info: Section 4 Memories SRM2264LC SRM2264LCT 64K 8KX8 Access tim e ns Part number Capacity(bits) Organization(bits) - SRM2464MT* 'K K K SRM2564C >r S afe RAM — I 32KX9 K 7 0 /8 5 /1 0 0 •SRM2A256LLMX 7 0 /8 5 /1 0 0 i SRM2A256LLCT 85/100 ■SRM2B256SLMX 5 5 /7 0 /1 0 0

upd444c

Abstract: SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT
Contextual Info: 1997 DATABOOK SRAM PRODUCTS 000-97-MEM-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238

DIP28pin

Abstract: sop6
Contextual Info: Memories S tatic H A M s CMOS Static RAMs Wide temperature operation: —25 to +85°C P a rt n u m b e r C a p a c ity O ^ a r t a t o n Power s u p p ly (V ) C urre n t consum ption Operating S tandby (mA, Max.) i ^ A , Max.) Am bient te n $ d ra lu re

SRM2B256SLMX55

Abstract: SRM2016C
Contextual Info: Table of Contents Table of Contents SRAM Products Short Form M atrix. 5 SRM2016C10/12.16K-Bit Static RAM. 7 SRM2016C/MT12.16K-Bit Static

SRM21

Abstract: PF807-03
Contextual Info: EPSON PF807-03 SRM 21016LLTX12/15 1 M-Bit Static RAM • • • • Wide Voltage Operation and Low Current Consumption Access Time 120ns/150ns 2.7V 65,536 WordsXI 6-Bit Asynchtonous Wide Temperature Range I DESCRIPTION The SRM 2101 6 LLTX 12/15 is a 65,536 w ordsxl 6-bit asynchronous, random access memory on a monolithic