SRF TRANSISTOR Search Results

srf transistor

Contextual Info: SRF 1136 NPN RF POWER TRANSISTOR DESCRIPTION: The ASI SRF 1136 is a Common Emitter Device Designed for class C Amplifier Applications up to 1 GHz. PACKAGE STYLE 280 4L STUDLESS FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS

srf transistor

Contextual Info: SRF 1318 NPN RF POWER TRANSISTOR DESCRIPTION The ASI SRF 1318 is a Common Emitter Device Designed for Class C Amplifier Applications up to 1 GHz. PACKAGE STYLE 280 4L STUDLESS FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS

JESD22-A104B

Abstract: jesd22-a103b JESD22-A113 SRF-1016Z SRF-2016Z SRQ-2116Z STQ-1016Z STQ-2016Z STQ-3016Z TSSOP-16
Contextual Info: Reliability Qualification Report STQ-2016Z - Matte Sn, RoHS compliant Products Qualified by Similarity STQ-1016Z SRF-1016Z SRQ-2116Z STQ-3016Z SRF-2016Z The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for

STQ2016Z

Abstract: JESD22-A104B SRF-2016Z JESD22-A110 SRF-1016Z SRQ-2116Z STQ-1016Z STQ-2016Z STQ-3016Z TSSOP-16
Contextual Info: Reliability Qualification Report STQ-2016Z - Matte Sn, RoHS compliant Products Qualified by Similarity STQ-1016Z SRF-1016Z SRQ-2116Z STQ-3016Z SRF-2016Z The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for

srf 2417

Abstract: ML2724 DB10 ML2726 ML5745 220nf capacitor SRF274 718G
Contextual Info: SRF-2724CS Proposed 2.4GHZ LOW-IF 1.5MBPS FSK TRANSCEIVER Package: 7mmx7mmx1mm Battery N/C 8 Features „ „ „ „ „ „ „ „ „ „ VCC Complete 2.4GHz Transceiver - High Data Rate 1.5Mbps - 81dBm Sensitivity at 0.1% BER (Typ.) - 3dBm Output Power (Differential, Typ.)

Contextual Info: SMT Air Coil Inductor AIAC-2712C RoHS Compliant FEATURES: • High current design • Wide Range Frequency Response • Excellent Q & SRF • Standard flat cap top suitable for automatic placement. 6.00 x 2.50 x 2.60mm APPLICATIONS: • Widely used in Cordless Phones, High Frequency Communication

Contextual Info: SMT Air Coil Inductor AIAC-4125C RoHS Compliant FEATURES: • High current design • Wide Range Frequency Response • Excellent Q & SRF • Standard flat cap top suitable for automatic placement. 9.0 x 4.4 x 4.6mm APPLICATIONS: • Widely used in Cordless Phones, High Frequency Communication

Contextual Info: SMT Air Coil Inductor AIAC-1008C Pb RoHS Compliant FEATURES: • High current design • Wide Range Frequency Response • Excellent Q & SRF • Standard flat cap top suitable for automatic placement. 3.20 x 1.90 x 2.20mm APPLICATIONS: • Widely used in Cordless Phones, High Frequency Communication

Contextual Info: SMT Air Coil Inductor AIAC-0805C Pb RoHS Compliant FEATURES: • High current design • Wide Range Frequency Response • Excellent Q & SRF • Standard flat cap top suitable for automatic placement. 2.85 x 1.80 x 2.10mm APPLICATIONS: • Widely used in Cordless Phones, High Frequency Communication

Contextual Info: SMT Air Coil Inductor AIAC-1812 RoHS Compliant FEATURES: • High current design • Wide Range Frequency Response • Excellent Q & SRF • Standard flat cap top suitable for automatic placement. 4.7 x 3.5 x 3.5mm APPLICATIONS: • Widely used in Cordless Phones, High Frequency Communication

Contextual Info: SMT Air Coil Inductor AIAC-1512C RoHS Compliant FEATURES: • High current design • Wide Range Frequency Response • Excellent Q & SRF • Standard flat cap top suitable for automatic placement. 3.30 x 2.50 x 2.60mm APPLICATIONS: • Widely used in Cordless Phones, High Frequency Communication

ignition driver

Abstract: FJAFS1510A fairchild Resonant IC FJAFS1510ATU FDC655 HV cascode smps cascode smps
Contextual Info: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies

Contextual Info: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies

fairchild power bjt

Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor
Contextual Info: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver

j1510a

Abstract: FJAFS1510A
Contextual Info: FJAFS1510A ESBC Rated NPN Power Transistor Applications Description • High-Voltage and High-Speed Power Switches • Emitter-Switched Bipolar/MOSFET Cascodes ESBC™ • Smart Meters, Smart Breakers, SMPS, HV Industrial Power Supplies The FJAFS1510A is a low-cost, high-performance power

Contextual Info: FJP2145 ESBC Rated NPN Power Transistor ESBC Features FDC655 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON)(1) 0.21 V 2A 0.105 Ω The FJP2145 is a low-cost, high-performance power switch designed to provide the best performance when

J1720

Abstract: smps ic GKJ FDS8817
Contextual Info: FJAFS1720 ESBC Rated NPN Power Transistor ESBC Features FDS8817 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON) 0.304 V 10 A 0.0304 Ω (1) The FJAFS1720 is a low-cost, high-performance power switch designed to provide the best performance when

c 945 TRANSISTOR equivalent

Abstract: FDC655 fairchild power bjt ignition drivers
Contextual Info: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,

Contextual Info: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,

Contextual Info: FJPF2145 ESBC Rated NPN Power Transistor ESBC Features FDC655 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON)(1) 0.21 V 2A 0.105 Ω The FJPF2145 is a low-cost, high-performance power switch designed to provide the best performance when

darlington pair transistor

Abstract: 6LF6 common collector amplifier circuit designing micro-x mhz ghz microwave GRM188R71E473K Amplifier SOT-89 c4 0603CS-33NX_LU SKY65014 sky65015-70lf transistor Common Base configuration
Contextual Info: APPLICATION NOTE Gain Block Bias Networks Introduction Skyworks gain block amplifiers are InGaP/GaAs HBT integrated circuits. They use a Darlington-pair transistor configuration with bias and feedback resistors properly selected to determine the gain, input and output impedances and bias parameters. A schematic representation of the amplifier is shown in Figure 1.

Contextual Info: CTEL PRO DUCTS INC. INDUCTORS 13402 South 71 Highway/Grandview, MO 64030/ 816 761-6314 TWX 910-777-7037 MINI-L HERMETICALLY SEALED RF INDUCTORS TG, TH SERIES Series A max. Weight TG TH .390 .350 .06 oz. .07 oz. The TG and TH series offer high “ Q" inductors in a TO-5 transistor can con­

660 TG

Abstract: TH31 TH-43 th1018 TH18 TH 477 transistor tg9 th16 MIL-T-27 TG-14
Contextual Info: W~l C T EL IN D U C TO R S PRODUCTS INC. 13402 South 71 Highway/Grandview, MO 64030/ 816 761-6314 TWX 910-777-7037 M IN I-L HERMETICALLY SEALED RF INDUCTORS . TG, TH SERIES Series A max. Weight TG TH .390 .350 .06 oz. .07 oz. The TG and TH series offer high "Q " inductors in a TO-5 transistor can con­

Contextual Info: or el tA PRODUCTS INC. INDUCTORS 13402 South 71 Highway/Grandview, MO 64030/ 816 761-6314 TWX 910-777-7037 MINI-L HERMETICALLY SEALED RF INDUCTORS TG, TH SERIES S e rie s A m ax. W e ig h t TG TH .3 9 0 .350 .0 6 o z . .0 7 o z . The TG and TH series offer high “ Q ” inductors in a TQ-5 transistor can con­