SRAM TTL 1024K X 8 Search Results

AS6C8008A

Contextual Info: JANUARY 2008 AS6C8008A 1024K X 8 BIT SUPER LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised ORDERING INFORMATION in page 12 Deleted E grade 1 Issue Date Dec.18.2009 Aug.30.2010 Apr. 12.2011 JANUARY 2008

AS7C38096B

Abstract: 1024K
Contextual Info: AS7C38096B 1024K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Confidential Description Initial Issue Issue Date June.2014 Rev 1.0 – June 2014 AS7C38096B 1024K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 FEATURES GENERAL DESCRIPTION

Contextual Info: ALLIANCE MEMORY, INC AS6C8008A Rev. 1.2 1024K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised ORDERING INFORMATION in page 12 Deleted E grade 1 Issue Date Dec.18.2009 Aug.30.2010 Apr. 12.2011

AS6C8008

Abstract: SRAM TTL 1024K x 8 AS6C8008-55ZIN LOW512K sram battery
Contextual Info: JANUARY 2008 January 2007 AS6C8008 X 8 BITCMOS LOW SRAM POWER CMOS SRAM 1024K X 8 BIT SUPER 512K LOW POWER FEATURES GENERAL DESCRIPTION Fast access time : 55ns Low power consumption: Operating current : 30mA TYP. Standby current : 6µA (TYP.) LL-version

Contextual Info:  LY61L102516A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.2 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issued Added LY61L102516AGL Revised IOH/IOL = -8mA/4mA to IOH/IOL = -4mA/8mA in AC TEST CONDITIONS Lyontek Inc. reserves the rights to change the specifications and products without notice.

Contextual Info:  LY62L10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 1.2 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised ORDERING Deleted E grade INFORMATION in page 11 Lyontek Inc. reserves the rights to change the specifications and products without notice.

AS6C8008

Abstract: sram 8008 SRAM TTL 1024K x 8 LOW512K 512K x 8 bit sram 32 pin
Contextual Info: JANUARY 2008 January 2007 AS6C8008 X 8 BIT LOW POWER CMOS SRAM 1024K X 8 BIT SUPER 512K LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Fast access time : 55ns Low power consumption: Operating current : 30/20mA TYP. Standby current : 6µA (TYP.) LL-version

LY6210248

Abstract: SRAM TTL 1024K x 8
Contextual Info: LY6210248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 0.4 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Description Initial Issue Added ISB Spec. Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available

Contextual Info: LY6210248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 0.2 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Description Initial Issue Added ISB Spec. Issue Date Oct.14.2007 Fab.1.2008 Lyontek Inc. reserves the rights to change the specifications and products without notice.

LY62W10248

Contextual Info:  LY62W10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 1.3 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Description Initial Issue Added ISB Spec. Revised ICC1/ISB1/VDR/IDR Spec. Revised VTERM to VT1 and VT2 Revised Test Condition of ISB1/IDR

Contextual Info: LY61L10268A 1024K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Description Initial Issue Issue Date Jan.21.2014 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, lndustry E . Rd. 9, Science-Based Industrial Park, Hsinchu 300, Taiwan

ly62l1024

Abstract: LY62L10248
Contextual Info:  LY62L10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Description Initial Issue Issue Date Dec.18.2009 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

Contextual Info: LY6210248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Rev. 0.5 Rev. 0.6 Rev. 1.0 Description Initial Issue Added ISB Spec. Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package

AS6C1616

Abstract: cmos sram AS6C1616-55BIN 1024K SRAM TTL 1024K x 8
Contextual Info: AS6C1616 FEBRUARY 2009 January 2007 512K X 8 BI T LOW 1024K X 16 BIT LOW POWER CMOS SRAMPOWER FEATURES CMOS SRAM GENERAL DESCRIPTION The AS6C1616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using

SRAM TTL 1024K x 8

Abstract: AS6C1616 cmos sram AS6C1616-70 DR 12V
Contextual Info: AS6C1616 FEBRUARY 2009 January 2007 512K X 8 BI T LOW 1024K X 16 BIT LOW POWER CMOS SRAMPOWER FEATURES CMOS SRAM GENERAL DESCRIPTION The AS6C1616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using

Contextual Info: LY62L10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 0.4 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Description Initial Issue Revised ISB1, ICC1, IDR, VDR Delete -45ns Spec. Added ISB Spec. Added SL Spec. Issue Date Jan.8.2007 Nov.1.2007

Contextual Info:  LY62W10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 1.7 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 1.6 Rev. 1.7 Description Initial Issue Added ISB Spec. Revised ICC1/ISB1/VDR/IDR Spec. Revised VTERM to VT1 and VT2

AS6C1616A

Abstract: AS6C8016
Contextual Info: AUGUST 2010 AS6C1616A 1024K X 16 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION • • • • • • TheAS6C1616A - 55%,1 is fabricated by Alliance's advanced full CMOS process technology. The device supports industrial temperature range and Chip Scale

as7c316098a

Contextual Info: AS7C316098A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.2 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issued Add 48 pin BGA package type. 1.“CE# ≧VCC - 0.2V” revised as ”CE# ≦0.2” for TEST CONDITION of Average Operating Power supply Current

Contextual Info: AS7C316098A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.2 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issued Add 48 pin BGA package type. 1.“CE# VCC - 0.2V” revised as ”CE# Ψ0.2” for TEST CONDITION of Average Operating Power supply Current

AS7C316098B

Contextual Info: AS7C316098B 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Confidential Description Initial Issued Issue Date June 2014 Rev1.0 – June 2014 AS7C316098B 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.0 FEATURES GENERAL DESCRIPTION

Contextual Info: LY62L102516 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.1 REVISION HISTORY Revision Rev. 0.1 Description Initial Issue Issue Date Feb.20.2008 Lyontek Inc. reserves the rights to change the specifications and products without notice. 40 Hsuch-Fu Rd., Hsinchu, Taiwan.

Contextual Info: LY62L102516A 1024K x 16 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Description Initial Issue Issue Date Jan. 09. 2012 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

Contextual Info: LY62102516 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.3 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION