SRAM STM Search Results
SRAM STM Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 27S07ADM/B |
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27S07A - Standard SRAM, 16X4 |
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| 27LS07DM/B |
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27LS07 - Standard SRAM, 16X4 |
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| 27S03/BEA |
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27S03 - SRAM - Dual marked (860510EA) |
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| 27S03ALM/B |
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27S03A - 64-Bit, Low Power Biploar SRAM |
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| 27S03ADM/B |
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27S03A - 64-Bit, Low Power Biploar SRAM |
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SRAM STM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
M48Z512A
Abstract: M48Z512AV M48Z512AY SOH28 CP2022
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M48Z512A M48Z512AY, M48Z512AV 32-pin M48Z512A: M48Z512AY: M48Z512AV: M48Z512A M48Z512AV M48Z512AY SOH28 CP2022 | |
M48Z128
Abstract: M48Z128Y
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M48Z128 M48Z128Y 128Kb M48Z128: M48Z128Y: M48Z128/128Y M48Z128 M48Z128Y | |
D 4242Contextual Info: M48Z129Y M48Z129V 1 Mbit 128Kb x8 ZEROPOWER SRAM PRELIMINARY DATA INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER MICROPROCESSOR POWER-ON RESET |
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M48Z129Y M48Z129V 128Kb M48Z129Y: M48Z129V: 128Kx8 M48Z129Y/129V D 4242 | |
M48Z129V
Abstract: M48Z129Y
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M48Z129Y* M48Z129V 32-pin PMDIP32 M48Z129Y: M48Z129V: M48Z129V M48Z129Y | |
M48Z512A
Abstract: M48Z512AV M48Z512AY M4Z32-BR00SH1 SOH28 M48Z51
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M48Z512A M48Z512AY, M48Z512AV M48Z512A: M48Z512AY: M48Z512AV: M48Z512A M48Z512AV M48Z512AY M4Z32-BR00SH1 SOH28 M48Z51 | |
M40Z300
Abstract: M48Z512A M48Z512AV M48Z512AY SOH28
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M48Z512A M48Z512AY, M48Z512AV* 32-pin M48Z512A: M48Z512AY: M48Z512AV: M40Z300 M48Z512A M48Z512AV M48Z512AY SOH28 | |
M48Z129V
Abstract: M48Z129Y
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M48Z129Y M48Z129V 32-pin PMDIP32 M48Z129Y: M48Z129V: M48Z129V M48Z129Y | |
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Contextual Info: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE |
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M48Z128 M48Z128Y, M48Z128V* M48Z128: M48Z128Y: M48Z128V: 28-PIN 32-LEADd | |
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Contextual Info: M48Z512A M48Z512AY 4 Mbit 512Kb x8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ AUTOMATIC POWER-FAIL CHIP DESELECT |
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M48Z512A M48Z512AY 512Kb PMDIP32 M48Z512A: M48Z512AY: M48Z512A/512AY | |
M48Z128
Abstract: M48Z128Y SOH28 TSOP32
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M48Z128 M48Z128Y 128Kb PMDIP32 M48Z128: M48Z128Y: 28-PIN 32-LEAD M48Z128 M48Z128Y SOH28 TSOP32 | |
M48Z128
Abstract: M48Z128V M48Z128Y SOH28 TSOP32
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M48Z128 M48Z128Y, M48Z128V* 32-pin M48Z128: M48Z128Y: M48Z128V: M48Z128 M48Z128V M48Z128Y SOH28 TSOP32 | |
SOH28
Abstract: TSOP32 M48Z128 M48Z128V M48Z128Y
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M48Z128 M48Z128Y, M48Z128V M48Z128: M48Z128Y: M48Z128V: 28-PIN 32LEAD SOH28 TSOP32 M48Z128 M48Z128V M48Z128Y | |
M48Z2M1
Abstract: M48Z2M1Y
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M48Z2M1 M48Z2M1Y M48Z2M1: PLDIP36 M48Z2M1Y: M48Z2M1, M48Z2M1 M48Z2M1Y | |
Schottky Diode 75V 7A
Abstract: M48Z512A M48Z512AV M48Z512AY SOH28
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M48Z512A M48Z512AY, M48Z512AV 512Kb PMDIP32 M48Z512A: M48Z512AY: M48Z512AV: 28-PIN Schottky Diode 75V 7A M48Z512A M48Z512AV M48Z512AY SOH28 | |
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M48Z2M1V
Abstract: M48Z2M1Y
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M48Z2M1Y M48Z2M1V M48Z2M1Y: M48Z2M1V: 36-pin, PLDIP36 M48Z2M1Y, M48Z2M1V M48Z2M1Y | |
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Contextual Info: M48Z129V 3.3 V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of |
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M48Z129V | |
M68xContextual Info: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of |
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M48Z512A M48Z512AY, M48Z512AV M48Z512A: M48Z512AY: M48Z512AV: PMDIP32 M68x | |
M48Z129V
Abstract: M48Z129Y
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M48Z129Y M48Z129V M48Z129Y M48Z129V: M48Z129V | |
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Contextual Info: M48Z128 M48Z128Y 5.0 V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of |
Original |
M48Z128 M48Z128Y M48Z128: M48Z128Y: | |
M48Z129V
Abstract: M48Z129Y
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M48Z129Y* M48Z129V M48Z129Y: M48Z129V: M48Z129V M48Z129Y | |
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Contextual Info: JUL 14 '993 PRELIMINARY MT4LS12832 128K X 32 SRAM MODULE M IC R O N • SfcMcCONDOCIOR. MC SRAM MODULE 128K X 32 SRAM LOW VOLTAGE FEATURES • High speed: 20*, 25 and 35ns • High-density 512KB design • High-performance, low-power, CMOS double-metal process |
OCR Scan |
MT4LS12832 512KB 64-Pin C1993. | |
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Contextual Info: MICRON SEMICONDUCTOR INC b3E D • blllSM S 000057=5 T4 4 « U R N ADVANCE MICRON ■ 64K KMICOMDUCTOR MC SYNCHRONOUS SRAM M T58LC 64K 18F5 X 18 SYNCHRONOUS SRAM 64Kx 18 SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND LATCHED OUTPUTS FEATURES • • • • |
OCR Scan |
MT58LC64K18F5 MT58LC64K1IF5 C1993, | |
58LC32K
Abstract: 58Lc32
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OCR Scan |
MT58LC32K36C4 486/Pentiumâ MT58LC32K36C4LG-10 64-bit MT58LC32K36C4LG-7 ITTMLC32K36C4 C1993. 58LC32K 58Lc32 | |
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Contextual Info: M48Z128 M48Z128Y 5.0 V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of |
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M48Z128 M48Z128Y M48Z128: M48Z128Y: PMDIP32 | |