SRAM 68100 Search Results

Contextual Info: KM681000BLI/BLI-L CMOS SRAM 128Kx8 Bit Industrial Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range : -40 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power D issipation Standby (CMOS) : 550^W (Max.)L-Ver.

Contextual Info: KM681000BLE / BLE-L CMOS SRAM 128Kx8 Bit Extended Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CM O S): 550nW(Max.)L-Ver.

A13CH

Abstract: km6810008 A12CZ KM681000BLI km6810008l
Contextual Info: CMOS SRAM KM681000BLI / BLI-L 128Kx8 Bit Industrial Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • Industrial Tem perature R ange : -40 to 8 5°C • Fast Access Tim e : 7 0 ,1 0 0 ns M ax. • Low Pow er Dissipation Standby (C M O S ) : 5 5 0 pW (M ax.)L -V er.

68 1103

Abstract: KM681000BL A14F
Contextual Info: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced

Contextual Info: KM681001 CMOS SRAM 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CM O S) : 2mA (max.) Operating KM681001P/J-20: 170m A (max.) K M 681001P/J-25: 150mA (max.)

Contextual Info: KM681002 CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM The KM681002 is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by 8 bits. The KM 681002 uses eight com m on input and output lines and has an output enable pin w hich operates

Contextual Info: KM681002B, KM681002BI CMOS SRAM Document Title 128Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Remark Rev No. History Rev. 0.0 Initial release with Design Target.

681000CLP

Abstract: P55n 681000C 2U27 0-00C M681000CL
Contextual Info: Advance Information KM681000C Family CMOS SRAM 128Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS • Organization : 128Kx8 • Power Supply Voltage : Single 5V +/-10% The KM681000C family is fabricated

Contextual Info: KM681002C/CL, KM681002CI CLI PRELIMINARY CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998

Contextual Info: KM681002A, KM681002AI CMOS SRAM Document T itle 128Kx8 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

Contextual Info: PRELIMINARY KM681002C/CL, KM681002CI/CLI CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998

cs1g

Contextual Info: KM681000ALI/ALI-L CM O S SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 85°C The KM 681000ALI/ALI-L is a 1,048,576-bit high-speed S ta tic R and o m A c c e s s M em ory o rganized as 131,072

Contextual Info: KM681001 CMOS SRAM 128Kx 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. The KM681001 Is a 1,048,576-bit • Low Power Dissipation Random Access Memory organized as 131,072 words Standby (TTL) : 40 mA(Max.)

cm 324

Abstract: KM681002A KM681002A-12 KM681002A-15 KM681002A-20 74114
Contextual Info: PRELIMINARY CMOS SRAM KM681002A 128K x 8 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA (Max.)

KM681001ASJ

Contextual Info: KM681001A CMOS SRAM Document Title 128Kx8 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. H is to ry Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0

KM681002A

Abstract: KM681002A-12 KM681002A-15 KM681002A-20
Contextual Info: ADVANCED INFORMATION CM O S SRAM KM681002A 131,072 WORDx8 Bit High-Speed CMOS Static RAM FEATURES • Fast Access Time : 1 2 ,1 5 ,1 7 ,20ns max. • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 3mA (max.) Operating : KM681002A-12 : 185mA (max.)

Contextual Info: KM681002B, KM681002BI CMOS SRAM Document Title 128Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History R ev. 0.0 Initial re le a s e w ith D esign T a rge t.

Contextual Info: KM681000B Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft for com m ercial product - Com mercial Product only O ctober 28th, 1992 Prelim inary 0.1 - Initial draft for Extended/Industrial Product

KM681001P

Abstract: cs-113-1 KM681001-35 KM681001-25
Contextual Info: KM681001 CMOS SRAM 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.) Operating KM681001P/J-20: 170mA (max.) KM681001P/J-25: 150mA (max.)

Contextual Info: KM681002A, KM681002AI CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15, 20ns Max. • Low Power Dissipation Standby (TO .) : 25mA(Max.) (CMOS) : 8mA(Max.) Operating KM681002A -1 2 : 170mA(Max.) KM681002A -1 5 : 165mA(Max.)

Contextual Info: KM681001 CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) The KM681001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words

KM681001J

Abstract: KM681001-35 KM681001
Contextual Info: KM681001 CMOS SRAM 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS) : 2mA (max.) Operating KM681001 -20 : 1 70mA(max.) KM681001 - 2 5 : 150mA(max.)

Contextual Info: CMOS SRAM KM681001 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CM OS): 2mA (max.) Operating KM6S1001P/J-20:170mA (max.) KM081001P/J-25:150mA (max.)