SRAM 5V 512K X 8 Search Results

68S16000

Abstract: AB-020
Contextual Info: 512K x 32 SRAM MODULE PUMA 68S16000/AB-020/025/35/45 Issue 5.0 : May 2001 • User Configurable as 8 / 16 / 32 bit wide output. • Operating Power : • Standby Power : CMOS • Single 5V±10% Power supply. 512K x 8 SRAM 512K x 8 SRAM 512K x 8 SRAM CS1

Contextual Info: LP614096-I Series 512K X 8 BIT 5V HIGH SPEED CMOS SRAM Preliminary Document Title 512K X 8 BIT 5V HIGH SPEED CMOS SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue January 7, 2009 Preliminary January, 2009, Version 0.0

GVT72512A8

Contextual Info: ADVANCE INFORMATION GALVANTECH, INC. GVT72512A8 REVOLUTIONARY PINOUT 512K X 8 ASYNCHRONOUS SRAM 512K x 8 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The GVT72512A8 is organized as a 524,288 x 8 SRAM

GVT72512A8

Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT72512A8 REVOLUTIONARY PINOUT 512K X 8 512K x 8 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • • The GVT72512A8 is organized as a 524,288 x 8 SRAM using a four-transistor memory cell with a high performance,

Contextual Info: M68AF511AL 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

18OCT

Contextual Info: M68AF511AL 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

Contextual Info: M68AF511AL 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

M68AF511A

Abstract: SO32 TSOP32
Contextual Info: M68AF511A 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 4.5 to 5.5V 512K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 55ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O

M68AF511A

Abstract: SO32 TSOP32
Contextual Info: M68AF511A 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O

M68AF511AL

Abstract: SO32 TSOP32
Contextual Info: M68AF511AL 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

ep 1387

Contextual Info: M68AF511A 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 4.5 to 5.5V 512K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 55ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O

HMS51232M4G

Abstract: simm 72 pinout
Contextual Info: HANBit HMS51232M4G SRAM MODULE 2Mbyte 512K x 32-Bit , 72PIN SIMM, 5V Part No. HMS51232M4G GENERAL DESCRIPTION The HMS51232M4GG is a high-speed static random access memory (SRAM) module containing 1,048,576 words organized in a x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 72-pin, single-sided, FR4-printed circuit board.

D0-D31

Contextual Info: MP512S32JC 512K x 32 Fast SRAM PLCC Issue 1.1 December 2007 General Description Features The MP512S32JC device is a 512K x 32 SRAM module housed in a 68 Jleaded package which complies with the JEDEC 68 PLCC standard. Access times of 15, 20 or 25 ns are available. The 5V device is

CY7C1049

Abstract: CY7C1041 JESD22 9200 hitachi 98248
Contextual Info: Cypress Semiconductor Qualification Report QTP# 98248 VERSION 1.0 June, 1998 4 Meg SRAM, R42HD Technology 5V operation CY7C1049 512K x 8 Static RAM CY7C1041 256K x 16 Static RAM Cypress Semiconductor, Inc. 4 Meg SRAM - R42HD Technology - Fab 4 Device: CY7C1049 (7C1549A)

Contextual Info: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL ■ YEAR 2000 COMPLIANT-CENTURY REGISTER ■ BCD CODED YEAR, MONTH, DAY, DATE,

as8sf384k32

Abstract: Mixed Module
Contextual Info: SRAM & FLASH Mixed Module AS8SF384K32 128K x 16 SRAM & 512K x 16 FLASH PIN ASSIGNMENT Top View SRAM / FLASH MEMORY ARRAY 68 Lead CQFP (QT) FEATURES NC A0 A1 A2 A3 A4 A5 FCS\1 GND FCS\2 SWE\1 A6 A7 A8 A9 A10 VCC • Operation with single 5V supply • High speed: 35ns SRAM, 90ns FLASH

Contextual Info: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS

D 4242

Abstract: M48T35 M48T512V M48T512Y
Contextual Info: M48T512Y M48T512V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS AUTOMATIC POWER-FAIL CHIP DESELECT

M48T201

Abstract: M48T513V M48T513Y
Contextual Info: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS

Contextual Info: 5 7. M48T512Y M48T512V SGS-THOMSON 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL « BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS

Contextual Info: SRAM & FLASH Mixed Module AS8SF384K32 128K x 16 SRAM & 512K x 16 FLASH PIN ASSIGNMENT Top View SRAM / FLASH MEMORY ARRAY 68 Lead CQFP (QT) NC A0 A1 A2 A3 A4 A5 FCS\1 GND FCS\2 SWE\1 A6 A7 A8 A9 A10 VCC FEATURES • Operation with single 5V supply • High speed: 35ns SRAM, 90ns FLASH

AS8S512K32

Contextual Info: AUSTIN SEM ICONDUCTOR, INC. AS8S512K32 512K X 32 SRAM SRAM MODULE AVAILABLE AS MILITARY SPECIFICATIONS SMD 5962-94611 MIL-STD-883 PIN ASSIGNMENT Top View FEATURES • 68 Lead CQFP SMD 5962-94611 Pending Operation with single 5V supply High speed: 20, 25 and 35ns

M48T201

Abstract: M48T513V M48T513Y Backup output protect 36Pin-DIP
Contextual Info: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS

M48T201

Abstract: M48T513V M48T513Y
Contextual Info: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS