SRAM 35NS Search Results

ED11

Abstract: ED15 SD10 SD12 SD13 SD14 SD15 WSE128K16-XXX
Contextual Info: White Electronic Designs WSE128K16-XXX PRELIMINARY* 128Kx16 SRAM/EEPROM MODULE FEATURES Commercial, Industrial and Military Temperature Ranges Access Times of 35ns SRAM and 150ns (EEPROM) TTL Compatible Inputs and Outputs Access Times of 45ns (SRAM) and 120ns (EEPROM)

as8sf384k32

Abstract: Mixed Module
Contextual Info: SRAM & FLASH Mixed Module AS8SF384K32 128K x 16 SRAM & 512K x 16 FLASH PIN ASSIGNMENT Top View SRAM / FLASH MEMORY ARRAY 68 Lead CQFP (QT) FEATURES NC A0 A1 A2 A3 A4 A5 FCS\1 GND FCS\2 SWE\1 A6 A7 A8 A9 A10 VCC • Operation with single 5V supply • High speed: 35ns SRAM, 90ns FLASH

Contextual Info: MT56C3818 8K x 18, DUAL 4K x 18 CACHE DATA SRAM M IC R O N CACHE DATA SRAM SINGLE 8Kx18 SRAM, DUAL 4KX18SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 18 SRAMs with common addresses and data; also configurable as a single 8K x 18 SRAM

SD10

Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX WSF512K16-XG2X
Contextual Info: White Electronic Designs WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES Access Times of 35ns SRAM and 90ns (FLASH) TTL Compatible Inputs and Outputs Access Times of 70ns (SRAM) and 120ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins

pin diagram of IC 74LS373

Contextual Info: M IC R O N MT56C0816 CACHE DATA SRAM DUAL 4Kx16 SRAM, SINGLE 8Kx16 SRAM CONFIGURABLE CACHE DATA SR A M FEATURES • O perates as two 4K x 16 SRAM s with common ad dresses and data; also configurable as a single 8K x 16 SRAM • Built-in input ad dress latches

ED11

Abstract: SD10 SD12 SD13 SD14 SD15 WSE128K16-XXX ED07
Contextual Info: WSE128K16-XXX 128KX16 SRAM/EEPROM MODULE PRELIMINARY* FEATURES • TTL Compatible Inputs and Outputs ■ Access Times of 35ns SRAM and 150ns (EEPROM) ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Access Times of 45ns (SRAM) and 120ns (EEPROM)

smd marking "d3"

Abstract: SMD MARKING A13
Contextual Info: SRAM MT5C2568 Austin Semiconductor, Inc. 32K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 28-PIN SOJ (ECJ) 28-Pin DIP (C, CW) FEATURES OPTIONS MARKING • Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2

SD10

Abstract: SD13 SD14 SD15 WSF128K16-XXX TWS 434 pin diagram SD3 smd
Contextual Info: WSF128K16-XXX HI-RELIABILITY PRODUCT 128KX16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES • Commercial, Industrial and Military Temperature Ranges ■ Access Times of 35ns SRAM and 70ns (FLASH) ■ TTL Compatible Inputs and Outputs ■ Access Times of 70ns (SRAM) and 120ns (FLASH)

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

SD10

Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX
Contextual Info: WSF512K16-XXX HI-RELIABILITY PRODUCT 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES • Access Times of 35ns SRAM and 90ns (FLASH) ■ 100,000 Erase/Program Cycles ■ Access Times of 70ns (SRAM) and 120ns (FLASH) ■ Sector Architecture

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

smd transistor A7

Abstract: smd transistor marking A14 smd a7 5962-8866204xx smd marking A8 smd transistor a4 SMD a7 Transistor Transistors Diodes smd e2 smd transistor marking A3 smd transistor A8
Contextual Info: SRAM MT5C2568 Austin Semiconductor, Inc. 32K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 28-PIN SOJ (DCJ) 28-Pin DIP (C, CW) FEATURES OPTIONS MARKING • Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2

5962-9461110HMA

Abstract: 5962-9461110HTC AS8S512K32Q 5962-9461110 702 smd AS8S512K32P-55 AS8S512K32 AS8S512K32A 5962-9461110HMC
Contextual Info: SRAM AS8S512K32 & AS8S512K32A Austin Semiconductor, Inc. 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc MARKINGS XT IT • Timing 17ns 20ns 25ns 35ns

Contextual Info: SRAM MT5C2568 Austin Semiconductor, Inc. 32K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 28-PIN SOJ (DCJ) 28-Pin DIP (C, CW) FEATURES OPTIONS MARKING • Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2

smd code F18

Contextual Info: ACT–SF2816 High Speed 128Kx16 SRAM / 512Kx16 FLASH Multichip Module CIRCUIT TECHNOLOGY www.aeroflex.com FEATURES 2 – 128K x 8 SRAMs & 2 – 512K x 8 Flash Die in One MCM • Access Times of 25ns SRAM and 60ns (Flash) or 35ns (SRAM) and 70 or 90ns (Flash)

SD10

Abstract: SD13 SD14 SD15 WSF128K16-XXX scs 2003
Contextual Info: White Electronic Designs WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES TTL Compatible Inputs and Outputs Access Times of 35ns SRAM and 70ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Access Times of 70ns (SRAM) and 120ns (FLASH)

MR2A08A

Abstract: MARK W1 TSOP zd 409 MR2A08AYS35 MR2A08AMA35 MR2A08
Contextual Info: MR2A08A FEATURES 512K x 8 MRAM Memory • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in

Contextual Info: MR2A08A 512K x 8 MRAM Memory FEATURES • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in

Contextual Info: JUL 14 '993 PRELIMINARY MT4LS12832 128K X 32 SRAM MODULE M IC R O N • SfcMcCONDOCIOR. MC SRAM MODULE 128K X 32 SRAM LOW VOLTAGE FEATURES • High speed: 20*, 25 and 35ns • High-density 512KB design • High-performance, low-power, CMOS double-metal process

SRAM 64k

Abstract: MT5C6401 64KX1
Contextual Info: MT5C6401 883C 64K x 1 SRAM AUSTIN SEMICONDUCTOR, INC. SRAM 64K x 1 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86015 • MIL-STD-883 22-Pin DIP FEATURES • High speed: 12, 15, 20, 25 and 35ns • Battery backup: 2V data retention

MR2A08AMYS35

Abstract: AECQ-100 MR2A08AYS35 BGA 8 x 8 tray MR2A08A
Contextual Info: MR2A08A FEATURES 512K x 8 MRAM Memory • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in

16Kx32

Contextual Info: MT8S1632 16K X 32 SRAM MODULE [M IC R O N SRAM MODULE 16Kx 32 SRAM FEATURES • High speed: 10*, 15,20,25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE functions

5962-9461110HMA

Abstract: 5962-9461110HTC
Contextual Info: SRAM AS8S512K32 & AS8S512K32A Austin Semiconductor, Inc. 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc MARKINGS XT IT • Timing 17ns 20ns 25ns 35ns