SR0602 Search Results

polysol 155 0,16

Abstract: SR0602 MW-75 B-178
Contextual Info: SPECIFICATION FOR APPROVAL PAGE: 1 REF : 20090312-B PROD. ABC'S DWG NO. SMD POWER INDUCTOR NAME SR0602□□□□L□-□□□ ABC'S ITEM NO. Marking A 101 Ⅰ﹒CONFIGURATION & DIMENSIONS： : 5.6±0.2 m/m B : 2.5±0.3 m/m C : 2.3 ref. m/m D : 5.8 ref.

Contextual Info: SPECIFICATION FOR APPROVAL REF. : SR0602□□□□L□-□□□ ABC'S DWG NO. PROD. SMD Power Inductor NAME 20121002-D REV. PAGE 1 Marking Dot is the Inductance code reading marking A 101 Ⅰ﹒Configuration and dimensions： B A D E F C PCB Pattern

Contextual Info: SPECIFICATION FOR APPROVAL REF : 20111014-C PAGE: 1 PROD. ABC'S DWG NO. SMD POWER INDUCTOR NAME SR0602□□□□L□-□□□ ABC'S ITEM NO. Ⅰ﹒CONFIGURATION & DIMENSIONS： : 5.6±0.2 m/m B : 2.5±0.3 m/m C : 2.3 ref. m/m D : 5.8 ref. m/m E : 6.0 ref.

flange RF termination 50

Abstract: SR0602 CHF9838CNF nt 9838
Contextual Info: NT *R oH S CO M PL IA Features • ■ ■ ■ Applications DC to 2.2 GHz Flanged model Low VSWR Aluminum Nitride Ceramic ■ High power RF transmission CHF9838CNF Series 250 W Power RF Flanged Chip Termination Absolute Ratings Power .250 W

6116la45yi

Abstract: 6116SA25Y 6116SA25YG 6116SA45SOG 6116LA-35SO 6116LA35 6116SA25TPGI 6116LA25P 6116SA25TP 6116SA35TPGI
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR-0602-02 DATE: Product Affected: IDT6116LA/SA Date Effective: Contact: Title: Phone #: Fax #: E-mail: 6-Jun-2006 8-Mar-2006 MEANS OF DISTINGUISHING CHANGED DEVICES:

IDT6116LA

Abstract: IDT6116SA SO24-2 6116 RAM
Contextual Info: CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT6116SA IDT6116LA Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25ns (max.) – Commercial: 15/20/25ns (max.)

IDT71256L

Abstract: IDT71256S IDT71256
Contextual Info: CMOS Static RAM 256K 32K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71256S IDT71256L The IDT 71256 is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT's high-performance, high-reliability CMOS technology. Address access times as fast as 20ns are available with power

Contextual Info: IDT7164S IDT7164L CMOS Static RAM 64K 8K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed address/chip select access time – Military: 20/25/35/45/55/70/85/100ns (max.) – Industrial: 20/25ns (max.) – Commercial: 20/25ns (max.)

IDT71256

Abstract: IDT71256L IDT71256S
Contextual Info: CMOS Static RAM 256K 32K x 8-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71256S IDT71256L High-speed address/chip select time – Military: 25/35/45/55/70/85/100ns (max.) – Industrial: 25/35ns (max.) – Commercial: 20/25/35ns (max.) low power only

d1n5819

Abstract: diode d1n5819 MARKING TR SOT23-6 P MOSFET Vin36V 1N5819 SR0602 HT7937 L10uH
Contextual Info: HT7937 Built-in OVP White LED Step-up Converter Features • Integrated open-circuit protection · Over voltage protection · Low standby current: 0.1mA typ. (VSHDN=0V) · Matches LED current · Up to 84% efficiency at VIN=3V, 3LEDs, · Small value inductor and capacitors

VOGT 545 02 082 00

Abstract: vogt 545 13 084 00 545 02 082 00 vogt vogt -sumida 575 26 sumida 94V-0 VOGT N1 50 545 42 045 00 vogt 545 13 084 vogt 545 23 194 00 SM3261-L 570 16 390 10, VOGT
Contextual Info: Продукция компании ABC TAIWAN ELECTRONICS CORP. ИНДУКТИВНОСТИ SMD ПРИБОР-СИСТЕМЫ Телефон/факс: +7 495 105 00 91(многоканальный) Телефон/факс: +7 (495) 784 61 69(многоканальный)

6116LA45

Abstract: IDT6116LA IDT6116SA SO24-2
Contextual Info: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)

CHF9838CNF

Abstract: flange RF termination 50 SR0602
Contextual Info: NT *R oH S CO M PL IA Features • ■ ■ ■ Applications DC to 2.2 GHz Flanged model Low VSWR Aluminum Nitride Ceramic ■ High power RF transmission CHF9838CNF Series 250 W Power RF Flanged Chip Termination Absolute Ratings Power .250 W

d1n5819

Contextual Info: HT7937 Built-in OVP White LED Step-up Converter Features • Integrated open-circuit protection · Over voltage protection · Low standby current: 0.1mA typ. (VSHDN=0V) · Matches LED current · Up to 84% efficiency at VIN=3V, 3LEDs, · Small value inductor and capacitors

SR0602

Contextual Info: NT *R oH S CO M PL IA Features • ■ ■ ■ Applications DC to 2.2 GHz Flanged model Low VSWR Beryllium Oxide ceramic ■ High power RF transmission CHF9838CNF Series 250 W Power RF Flanged Chip Termination Absolute Ratings Power .250 W

CICO NO 1

Abstract: SR0602 4590 SOT23-6 datasheets diode 1n5819 sot23-6 TE 1N5819 MV-103 equivalent HT7937 D1N5819 diode d1n5819
Contextual Info: HT7937 Built-in OVP White LED Step-up Converter Features • Integrated open-circuit protection · Over voltage protection · Low standby current: 0.1mA typ. (VSHDN=0V) · Matches LED current · Up to 84% efficiency at VIN=3V, 3LEDs, · Small value inductor and capacitors

Contextual Info: NT *R oH S CO M PL IA Features • ■ ■ ■ Applications DC to 2.2 GHz Flanged model Low VSWR Aluminum Nitride Ceramic ■ High power RF transmission CHF9838CNF Series 250 W Power RF Flanged Chip Termination Absolute Ratings Power .250 W

IDT7164

Abstract: IDT7164L IDT7164S P28-2
Contextual Info: IDT7164S IDT7164L CMOS Static RAM 64K 8K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed address/chip select access time – Military: 20/25/35/45/55/70/85/100ns (max.) – Industrial: 20/25ns (max.) – Commercial: 20/25ns (max.)

2S110

Abstract: IDT7164 P28-2 D28-3
Contextual Info: IDT7164S/LS IDT7164L/LL CMOS Static RAM 64K 8K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed address/chip select access time – Military: 20/25/35/45/55/70/85/100ns (max.) – Industrial: 25/35ns (max.) – Commercial: 15/20/25/35ns (max.)

CICO NO 1

Abstract: 1N5819 SR0602 1501 Dc to Dc converter
Contextual Info: HT7937 Built-in OVP White LED Step-up Converter Features • Integrated open-circuit protection · Over voltage protection · Low standby current: 0.1mA typ. (VSHDN=0V) · Matches LED current · Up to 84% efficiency at VIN=3V, 3LEDs, · Small value inductor and capacitors

2S110

Abstract: IDT7164 P28-2
Contextual Info: IDT7164S/LS IDT7164L/LL CMOS Static RAM 64K 8K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed address/chip select access time – Military: 20/25/35/45/55/70/85/100ns (max.) – Industrial: 25/35ns (max.) – Commercial: 15/20/25/35ns (max.)

HT7937

Abstract: diode d1n5819 1n5819 equivalent D1N5819
Contextual Info: HT7937 Built-in OVP White LED Step-up Converter Features • Integrated open-circuit protection · Over voltage protection · Low standby current: 0.1mA typ. (VSHDN=0V) · Matches LED current · Up to 84% efficiency at VIN=3V, 3LEDs, · Small value inductor and capacitors

71256l35p

Abstract: 71256L20PI IDT71256L 71256L25Y
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR-0602-03 Product Affected: IDT71256L Date Effective: Contact: Title: Phone #: Fax #: E-mail: DATE: 6-Jun-2006 8-Mar-2006 MEANS OF DISTINGUISHING CHANGED DEVICES:

D28-3

Contextual Info: IDT7164S IDT7164L CMOS Static RAM 64K 8K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed address/chip select access time – Military: 20/25/35/45/55/70/85/100ns (max.) – Industrial: 25/35ns (max.) – Commercial: 15/20/25/35ns (max.)