SR016 Search Results
SR016 Price and Stock
Vishay Intertechnologies ALSR016R000JE12ALSR01 6 5% E12 E3 - Bulk (Alt: ALSR016R000JE12) |
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ALSR016R000JE12 | Bulk | 10 Weeks | 100 |
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Vishay Intertechnologies ALSR01680R0JE12ALSR01 680 5% E12 e3 - Bulk (Alt: ALSR01680R0JE12) |
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Vishay Intertechnologies ALSR0168R00JE12ALSR01 68 5% E12 e3 - Bulk (Alt: ALSR0168R00JE12) |
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ALSR0168R00JE12 | Bulk | 10 Weeks | 100 |
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Vishay Intertechnologies ALSR01600R0FE08ALSR01 600 1% E08 E3 - Custom Tape W/Leader (Alt: ALSR01600R0FE08) |
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ALSR01600R0FE08 | Tape w/Leader | 10 Weeks | 100 |
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Vishay Intertechnologies ALSR01680R0JE08ALSR01 680 5% E08 E3 - Custom Tape W/Leader (Alt: ALSR01680R0JE08) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ALSR01680R0JE08 | Tape w/Leader | 10 Weeks | 100 |
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SR016 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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SR010TR
Abstract: SR010 204D BCD8
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ul94v-0sr008sr010sr016+5 | |
DIODE marking CK 6CA
Abstract: DIODE marking 7BA SG 6CA 6ca DIODE code 20c 7ba Diode HP5 637 409 SG 5BA MARKING CO5 sg 7ba ai cm1 100 1e8
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m306h1sfpdiode marking ck 6cadiode marking 7basg 6ca+7 | |
tcxo 13MHz
Abstract: SA7016 SA7016DH SR00602 TSSOP16
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sa7016tcxo 13mhzsa7016dhsr00602+1 | |
SR01800
Abstract: SA7026 SA7026DH SR00602
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sa7026sr01800sa7026dhsr00602 | |
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Contextual Info: ISSI IS61LV3224 32K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 9, 10, 12, 15 ns • CMOS low power operation ❑ 594 mW max. operating @ 9 ns ❑ 36 mW (max.) CMOS standby • TTL compatible interface levels • Single 3.3V power supply |
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is61lv3224100-pinis61lv3224-9tqis61lv3224-9tqi+4 | |
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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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Contextual Info: 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY advance ,NFo r m a t , o n J U L Y ,997 FEATURES DESCRIPTION • High-speed access time: 10, 12, 15 ns The IS S IIS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSI's highperformance CMOS technology. This highly reliable process |
OCR Scan |
iis61lv12824sr016-0f | |
datesheet grade 8
Abstract: 10th datesheet automobile datesheet b.a datesheet ba 1st year datesheet M306H5FGFP MA 2nd year IT datesheet up board datesheet 12 272bi TRANSISTOR BJ 131-6
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rej03b0095-0100zm306h5mg-xxxfp/mc-xxxfp/fgfpm306h5m306h3+10 | |
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Contextual Info: SR01632 512K x 32 Low Power Static RAM 1.5V Core VDD Features • ■ ■ ■ Fabricated on S150 Silicon On Insulator SOI CMOS 150 nm Process (Leff = 110 nm) Read Cycle Times Typical ≤20ns Worst case ≤ 25ns Write Cycle Times Typical ≤ 9ns Worst case ≤ 12ns |
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hlxsr016321x10-125x10-12150nm+1 | |
SA8026
Abstract: SA8026DH SR00602
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sa8026sa8026dhsr00602 | |
REJ03B0152-0210
Abstract: 006F16 100P6S-A M306H7FGFP SMI-50 SR04F NXP P60 CRC43 Nippon capacitors
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rej03b0152-0210006f16100p6s-am306h7fgfp+5 | |
ir remote control transmitter ABC T2
Abstract: SRF 7016 TRANSISTOR BJ 131-6 03F9 Nippon capacitors
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ir remote control transmitter abc t2srf 7016transistor bj 131-603f9+1 | |
SA8026
Abstract: SA8026DH SR00602
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sa8026sa8026dhsr00602 | |
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Contextual Info: SR01608 SR01608 2M x 8 STATIC RAM The monolithic, radiation hardened 16M bit Static proprietary design, layout and process hardening Random Access Memory SRAM in a 2M x 8 techniques. There is no internal EDAC implemented. configuration is a high performance 2,097,152 word x |
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hxsr01608150nm | |
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HLXSR01632Contextual Info: SR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low |
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hlxsr0163232-bit150nmads-14217 | |
nec p181
Abstract: SRF 7016 transistor f422 equivalent DVD read writer circuit diagram led clock circuit diagram Nippon capacitors
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m306h3mc-xxxfp/fcfp16-bitrej03b0086-0100zm16c/60+7 | |
tcxo philips
Abstract: philips pocket radio 19.44MHz TCXO philips tcxo SA8016 SA8016DH SA8016WC SR00602 TSSOP16
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sa8016tcxo philipsphilips pocket radio19.44mhz tcxo+5 | |
TSF-7070
Abstract: AWG MARKING CODE SOT23-5 EE19 type bobbin 29AWG circuit diagram of battery charger smps CTX22 EE19 cooper MUR160 SA58605 SA58605D
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sa58605tsf-7070awg marking code sot23-5ee19 type bobbin+6 | |
M306H5MG-XXXFPContextual Info: M306H5MG-XXXFP/MC-XXXFP/FGFP SNGLE-CHIP 16-BIT CMOS MICROCOMPUTER with DATA ACQUISITION CONTROLLER REJ03B0095-0100Z Rev.1.00 Jan 19, 2005 1. DESCRIPTION The M306H5MG/MC-XXXFP and M306H5FGFP are single-chip microcomputers using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and is packaged in a 116-pin plastic |
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m306h5mg-xxxfp/mc-xxxfp/fgfp16-bitrej03b0095-0100zm306h5mg/mc-xxxfp+5 | |
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Contextual Info: INTEGRATED CIRCUITS SA8026 2.5GHz low voltage fractional-N dual frequency synthesizer Product specification Supersedes data of 1998 Feb 08 Philips Semiconductors 1999 Mar 08 Philips Semiconductors Product specification 2.5GHz low voltage fractional-N dual frequency |
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sa8026 | |
5BW45
Abstract: SA1630 SA1530
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sa16305bw45sa1530 | |
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Contextual Info: Philips Semiconductors Preliminary specification 2.5GHz low voltage fractional-N dual synthesizer FEATURES SA8026 The synthesizer operates at VCO input frequencies up to 2.5 GHz. The synthesizer has fully programmable main, auxiliary and reference dividers. All divider ratios are supplied via a 3-wire serial |
OCR Scan |
sa8026 | |
116-Pin
Abstract: pal 005a DL000D mitsubishi split ac M306H2FCFP M306H2MC-XXXFP
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m306h2mc-xxxfpm306h2fcfp116-pinpal 005a+2 | |
DL000D
Abstract: M306H2FCFP M306H2MC-XXXFP SR0040
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m306h2m306h2fcfpm306h2mc-xxxfpdl000d+1 | |