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    SR016 Search Results

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    Vishay Intertechnologies

    Vishay Intertechnologies ALSR016R000JE12

    ALSR01 6 5% E12 E3 - Bulk (Alt: ALSR016R000JE12)
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    Vishay Intertechnologies ALSR01680R0JE12

    ALSR01 680 5% E12 e3 - Bulk (Alt: ALSR01680R0JE12)
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    Vishay Intertechnologies ALSR0168R00JE12

    ALSR01 68 5% E12 e3 - Bulk (Alt: ALSR0168R00JE12)
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    Vishay Intertechnologies ALSR01600R0FE08

    ALSR01 600 1% E08 E3 - Custom Tape W/Leader (Alt: ALSR01600R0FE08)
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    Vishay Intertechnologies ALSR01680R0JE08

    ALSR01 680 5% E08 E3 - Custom Tape W/Leader (Alt: ALSR01680R0JE08)
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    SR016 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SR010TR

    Abstract: SR010 204D BCD8
    Contextual Info: SWITCHES ROTARY, Encoded, Surface Mount EXCEL type ERD A range of miniature, surface mount, rotary switches with BCD or hexadecimal encoding. Screwdriver adjustment with gold plated contacts housed in black moulded bodies, flame retardant to UL94V-0. Fully sealed construction. Choice of stick or tape and reel packaging.


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    ul94v-0sr008sr010sr016+5sr008trsr010trsr016tr204dbcd8 PDF

    DIODE marking CK 6CA

    Abstract: DIODE marking 7BA SG 6CA 6ca DIODE code 20c 7ba Diode HP5 637 409 SG 5BA MARKING CO5 sg 7ba ai cm1 100 1e8
    Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    m306h1sfpdiode marking ck 6cadiode marking 7basg 6ca+76ca diodecode 20c 7badiode hp5 637 409sg 5bamarking co5sg 7baai cm1 100 1e8 PDF

    tcxo 13MHz

    Abstract: SA7016 SA7016DH SR00602 TSSOP16
    Contextual Info: INTEGRATED CIRCUITS SA7016 1.3GHz low voltage fractional-N synthesizer Product specification Supersedes data of 1999 Apr 20 Philips Semiconductors 1999 Nov 04 Philips Semiconductors Product specification 1.3GHz low voltage fractional-N synthesizer SA7016 GENERAL DESCRIPTION


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    sa7016tcxo 13mhzsa7016dhsr00602+1tssop16 PDF

    SR01800

    Abstract: SA7026 SA7026DH SR00602
    Contextual Info: INTEGRATED CIRCUITS SA7026 1.3GHz low voltage fractional-N dual frequency synthesizer Product specification Supersedes data of 1999 Apr 16 Philips Semiconductors 1999 Nov 04 Philips Semiconductors Product specification 1.3GHz low voltage fractional-N dual synthesizer


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    sa7026sr01800sa7026dhsr00602 PDF

    Contextual Info: ISSI IS61LV3224 32K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 9, 10, 12, 15 ns • CMOS low power operation ❑ 594 mW max. operating @ 9 ns ❑ 36 mW (max.) CMOS standby • TTL compatible interface levels • Single 3.3V power supply


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    is61lv3224100-pinis61lv3224-9tqis61lv3224-9tqi+4is61lv3224-10tqis61lv3224-10tqiis61lv3224-12tqis61lv3224-12tqi PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    Contextual Info: 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY advance ,NFo r m a t , o n J U L Y ,997 FEATURES DESCRIPTION • High-speed access time: 10, 12, 15 ns The IS S IIS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSI's highperformance CMOS technology. This highly reliable process


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    iis61lv12824sr016-0f PDF

    datesheet grade 8

    Abstract: 10th datesheet automobile datesheet b.a datesheet ba 1st year datesheet M306H5FGFP MA 2nd year IT datesheet up board datesheet 12 272bi TRANSISTOR BJ 131-6
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    rej03b0095-0100zm306h5mg-xxxfp/mc-xxxfp/fgfpm306h5m306h3+10datesheet grade 810th datesheetautomobile datesheetb.a datesheetba 1st year datesheetm306h5fgfpma 2nd year it datesheetup board datesheet 12272bitransistor bj 131-6 PDF

    Contextual Info: SR01632 512K x 32 Low Power Static RAM 1.5V Core VDD Features • ■ ■ ■ Fabricated on S150 Silicon On Insulator SOI CMOS 150 nm Process (Leff = 110 nm) Read Cycle Times Typical ≤20ns Worst case ≤ 25ns Write Cycle Times Typical ≤ 9ns Worst case ≤ 12ns


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    hlxsr016321x10-125x10-12150nm+1n40-1497-000-000 PDF

    SA8026

    Abstract: SA8026DH SR00602
    Contextual Info: INTEGRATED CIRCUITS SA8026 2.5GHz low voltage fractional-N dual frequency synthesizer Product specification Supersedes data of 1999 Mar 08 Philips Semiconductors 1999 Apr 16 Philips Semiconductors Product specification 2.5GHz low voltage fractional-N dual frequency


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    sa8026sa8026dhsr00602 PDF

    REJ03B0152-0210

    Abstract: 006F16 100P6S-A M306H7FGFP SMI-50 SR04F NXP P60 CRC43 Nippon capacitors
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    rej03b0152-0210006f16100p6s-am306h7fgfp+5smi-50sr04fnxp p60crc43nippon capacitors PDF

    ir remote control transmitter ABC T2

    Abstract: SRF 7016 TRANSISTOR BJ 131-6 03F9 Nippon capacitors
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    ir remote control transmitter abc t2srf 7016transistor bj 131-603f9+1nippon capacitors PDF

    SA8026

    Abstract: SA8026DH SR00602
    Contextual Info: INTEGRATED CIRCUITS SA8026 2.5GHz low voltage fractional–N dual frequency synthesizer Preliminary specification Supersedes data of 1998 Apr 06 Philips Semiconductors 1998 Oct 13 Philips Semiconductors Preliminary specification 2.5GHz low voltage fractional–N dual synthesizer


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    sa8026sa8026dhsr00602 PDF

    Contextual Info: SR01608 SR01608 2M x 8 STATIC RAM The monolithic, radiation hardened 16M bit Static proprietary design, layout and process hardening Random Access Memory SRAM in a 2M x 8 techniques. There is no internal EDAC implemented. configuration is a high performance 2,097,152 word x


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    hxsr01608150nm PDF

    HLXSR01632

    Contextual Info: SR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low


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    hlxsr0163232-bit150nmads-14217 PDF

    nec p181

    Abstract: SRF 7016 transistor f422 equivalent DVD read writer circuit diagram led clock circuit diagram Nippon capacitors
    Contextual Info: M306H3MC-XXXFP/FCFP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER with DATA ACQUISITION CONTROLLER REJ03B0086-0100Z Rev.1.00 2004.03.23 1. DESCRIPTION The M306H3MC-XXXFP/FCFP is single-chip microcomputer using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and is packaged in a 116-pin plastic molded QFP. This


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    m306h3mc-xxxfp/fcfp16-bitrej03b0086-0100zm16c/60+7116-pinnec p181srf 7016transistor f422 equivalentdvd read writer circuit diagramled clock circuit diagramnippon capacitors PDF

    tcxo philips

    Abstract: philips pocket radio 19.44MHz TCXO philips tcxo SA8016 SA8016DH SA8016WC SR00602 TSSOP16
    Contextual Info: INTEGRATED CIRCUITS SA8016 2.5GHz low voltage fractional-N synthesizer Product specification Supersedes data of 1999 Apr 16 Philips Semiconductors 1999 Nov 04 Philips Semiconductors Product specification 2.5GHz low voltage fractional-N synthesizer SA8016 GENERAL DESCRIPTION


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    sa8016tcxo philipsphilips pocket radio19.44mhz tcxo+5philips tcxosa8016dhsa8016wcsr00602tssop16 PDF

    TSF-7070

    Abstract: AWG MARKING CODE SOT23-5 EE19 type bobbin 29AWG circuit diagram of battery charger smps CTX22 EE19 cooper MUR160 SA58605 SA58605D
    Contextual Info: INTEGRATED CIRCUITS SA58605 Dual operational amplifier and 2.5 V shunt regulator Product data Philips Semiconductors 2002 Mar 25 Philips Semiconductors Product data Dual operational amplifier and 2.5 V shunt regulator SA58605 DESCRIPTION The SA58605 incorporates two op amps and 2.5 V shunt regulator


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    sa58605tsf-7070awg marking code sot23-5ee19 type bobbin+629awgcircuit diagram of battery charger smpsctx22ee19 coopermur160sa58605d PDF

    M306H5MG-XXXFP

    Contextual Info: M306H5MG-XXXFP/MC-XXXFP/FGFP SNGLE-CHIP 16-BIT CMOS MICROCOMPUTER with DATA ACQUISITION CONTROLLER REJ03B0095-0100Z Rev.1.00 Jan 19, 2005 1. DESCRIPTION The M306H5MG/MC-XXXFP and M306H5FGFP are single-chip microcomputers using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and is packaged in a 116-pin plastic


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    m306h5mg-xxxfp/mc-xxxfp/fgfp16-bitrej03b0095-0100zm306h5mg/mc-xxxfp+5m306h5fgfpm16c/60116-pinunit2607m306h5mg-xxxfp PDF

    Contextual Info: INTEGRATED CIRCUITS SA8026 2.5GHz low voltage fractional-N dual frequency synthesizer Product specification Supersedes data of 1998 Feb 08 Philips Semiconductors 1999 Mar 08 Philips Semiconductors Product specification 2.5GHz low voltage fractional-N dual frequency


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    sa8026 PDF

    5BW45

    Abstract: SA1630 SA1530
    Contextual Info: m m M n I SA1630 IF quadrature transceiver 1998 Feb 17 Product specification IC17 Data Handbook Philips Semiconductors PHtUPS PHILIPS Philips Semiconductors Product specification IF quadrature transceiver SA1630 DESCRIPTION • Internal IF PLL for synthesizing the local IF oscillator signal.


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    sa16305bw45sa1530 PDF

    Contextual Info: Philips Semiconductors Preliminary specification 2.5GHz low voltage fractional-N dual synthesizer FEATURES SA8026 The synthesizer operates at VCO input frequencies up to 2.5 GHz. The synthesizer has fully programmable main, auxiliary and reference dividers. All divider ratios are supplied via a 3-wire serial


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    sa8026 PDF

    116-Pin

    Abstract: pal 005a DL000D mitsubishi split ac M306H2FCFP M306H2MC-XXXFP
    Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    m306h2mc-xxxfpm306h2fcfp116-pinpal 005a+2dl000dmitsubishi split ac PDF

    DL000D

    Abstract: M306H2FCFP M306H2MC-XXXFP SR0040
    Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    m306h2m306h2fcfpm306h2mc-xxxfpdl000d+1sr0040 PDF