SQD65 Search Results

mosfet ir 840

Abstract: sf200aa20 FCA75BC50 sqd65bb75 FBA75BA50 SF150AA50 FCA50BC50 SF150AA20 250A darlington transistor FBA50BA50
Contextual Info: POW ER M OSFET MODULE Switching Time ns R d s (o n ) V d s (o n ) TYPE mO FBA50BA50 FCA50BC50 FBA50BA FBA75BA50 FCA75BC50 SF100AA50 SF150AA50 SF100AA20 SF150AA20 SF200AA20 SF200AA10 SF200AA10 ☆ New DARLINGTON TRANSISTOR le A VcBO V SQD50 35 50 SQD65 65

SQD65BB75

Abstract: sqd65B
Contextual Info: TRANSISTOR M O D U L E non -ISOLATED TYPE SQP65BB75 S Q D 6 5B B is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • VCbo= 750V, lc = 65A • Suitable for Resonance circuit applications.

Contextual Info: SANSHA ELECTRIC flFfi CO QOQQOQS T • SCMJ 37E P [idSFiTS/TRANSSSTORS/FRO POW ER M OSFET M O DULE Switching Time ns A Voss V FBA50BA50 50 500 60 60 FCA50BC50 50 500 60 60 TYPE Id : td (O N ) tr V OS(O N) V gss Vtso V V V ( rm s ) R th jc t/W - ’? ’•

SQD35JA160

Abstract: SQD300BA60 SQD50AB100 sqd65bb75 SQD200A40 SQD200A60 SQD35JA140 CD 300-16 IO 34 SQD300AA100 TA8250
Contextual Info: - 1 9 6 t-y y -s X ? • N P N . lfiftii • ira m ° 7 ° «* u —rh-r /u- • ? - < * - k w ° 1 0 OJÌLh (S B W S lc r) » l iL S S & g : E T 6 I 0 2 (M) a i. H m % VcBO V ebo fé c VCEX # (V ) CV) fe CP B ( T , =25*0) If (I bis) (V ) (A) CA) CA)

mosfet ir 840

Abstract: 250A darlington transistor SF200AA20 FBA50BA50 FCA75BC50 SF150AA50 sqd65bb75 FBA75BA SF150AA20 FBA75BA50
Contextual Info: SANSHA ELECTRIC liF G 37E CO l i 7 ^ ^ 1 2 4 3 «- D Ü Q O O O S 3> I I • t —y — — I M O iin r m m h S F E T S / T R rnn A i i i N i S T I S £ f 1J n I S i l i- T O R Id Voss A V Sw itching Tim e ns