SQB 2 T Search Results

Contextual Info: Model SQB Celtron Single-Ended Beam FEATURES • Capacities: 500 to 20k lbs, 250 to 5000 kg • High side-load tolerance • Electroless nickel-plated-alloy tool steel • NTEP Class III 5000M for SQB, SQB-F and SQB-SS available from 1k to 10k lbs • SQB-SS stainless steel construction

pj 9d9

Abstract: SQB7 jdda lddb bd-aj
Contextual Info: 4 d*rs*w{u w{t|*zo,w|{ h[be[fWhif[ Ydchfdaa[f QRNKP PLOMLP b W c i W hlc P g B C D B [-s{ a 4 _{}-, *o{us t|* ,vs +s{+|* M P f [|~.- ,s|,}+ E F G ]=US>Z ]=US>^ \=[U>Z \=[U>^ d=bd> fl` fs{~s+o-.+s b[V C Vwuw- H H Vwuw- D ew3s e V[` iHL6ZHL{{ E e.p }.-~.- E

SQB CELTRON

Abstract: celtron sqb celtron sqb 2 t celtron 1-14UNS x capacities 5000kg 10klb SQB CELTRON 1k
Contextual Info: Model SQB Vishay Celtron Single-Ended Beam FEATURES • Capacities: 500 to 20Klb, 250 to 5000kg • High side-load tolerance • Electroless nickel-plated-alloy tool steel • NTEP Class III 5000M for SQB, SQB-F and SQB-SS available from 1K to 10Klb • SQB-SS stainless steel construction

smd ra6

Abstract: SQB8 temperature controller SDC10 SDC10 smd ra7 RA7 smd smd transistor RA4 smd transistor scb ca2 smd code SQA3
Contextual Info: 2.6 MBit Dynamic Sequential Access Memory for Television Applications TV-SAM SDA 9253 Preliminary Data CMOS IC Features ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● 212 x 64 × 16 × 12-bit organization Triple port architecture One 16 × 12-bit input shift register

3da92

Contextual Info: bSE D • ÔE3StiGS GDS3414 =144 ISIE6 SIEM ENS SIEMENS AKTIENGESELLSCHAF 868352 - Bit Dynamic Sequential Access Memory for Television Applications TV - SAM Preliminary Data SDA 9251X CMOS IC Features • 212 x 64 x 16 x 4 bit organization • Triple port architecture

15W 50 Ohm Resistors

Abstract: 15W 50 Ohm Ceramic Resistors Wirewound Resistors - SQP TYPE 1k ohm 471r 431R Wirewound Resistors SQP TYPE 1k ohm sqp 10w resistor 100K 5w 180R J 470R
Contextual Info: High Power Resistors Type SQ Series Type SQ Series This flexible range of Characteristics Electrical Power Wirewound Resistors either have wire or power oxide film elements. Test Condition Performance -55°C ~ 155°C ± 300ppm/°C 10 times rated power for 5 seconds

9251-2X

Abstract: television internal parts block diagram B 1184 toba 4-bit register with truth table SQB3
Contextual Info: 868352-Bit Dynamic Sequential Access Memory for Television Applications TV-SAM SDA 9251-2X Preliminary Data CMOS IC Features ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● 212 x 64 x 16 x 4-bit organization Triple port architecture One 16 x 4-bit input shift register

MDP-402

Abstract: T402
Contextual Info: 4P CABLE ASS’Y WITH QUICK LOCK DIM’ A" •DIM”B" — H — DIM" ff1 1 Vj) _L mr uni Aüñk DIM" C"- ORDERING CODE: MDP- SR. NO. COLOR DIM"A" DIM"B" — WITHOUT TERMINAL DIM"C" WITH TERMINAL DIM"DT -4 P C A LG— LIGHT GRAY - B -BLACK G-GRAY

Contextual Info: EEPROM AS8ER128K32 128K x 32 Radiation Tolerant EEPROM PIN ASSIGNMENT AVAILABLE AS MILITARY SPECIFICATIONS 68 Lead CQFP MIL-PRF-38534 RES\ A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc • Top View FEATURES • • • • • • • • •

58c1001

Abstract: AS8E128K32 EEPROM AS8ER128K32
Contextual Info: EEPROM AS8ER128K32 Austin Semiconductor, Inc. 128K x 32 Radiation Tolerant EEPROM PIN ASSIGNMENT Top View AVAILABLE AS MILITARY SPECIFICATIONS 68 Lead CQFP MIL-STD-883 SMD 5962-94585 RES\ A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc • • FEATURES

Contextual Info: SIEMENS 868352-Bit Dynamic Sequential Access Memory for Television Applications TV-SAM SDA 9251-2X Prelim inary Data CM OS IC Features • 2 1 2 x 6 4 x 1 6 x 4-bit organization • Triple port architecture • O ne 16 x 4-bit input shift register • T w o 16 x 4-bit output shift registers

5W resistor 120 ohms j

Abstract: sqm 7w 15W 50 Ohm Ceramic Resistors 431R 15W 50 Ohm Resistors Wire wound resistor 5W 1.8 ohm
Contextual Info: High Power Resistors Type SQ Series Key Features • Choice of Styles ■ Bracketed Types Available ■ Temp. Op. -55°C to +250°C ■ Wide Value Range ■ Stable TCR 300ppm/°C ■ Custom Designs Welcome ■ Inorganic Flame Proof Construction This flexible range of Power Wirewound Resistors either have wire or power oxide film

14EEPROM

Contextual Info: EEPROM AS8ER128K32 128K x 32 Radiation Tolerant EEPROM PIN ASSIGNMENT Top View AVAILABLE AS MILITARY SPECIFICATIONS 68 Lead CQFP MIL-STD-883 RES\ A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc • FEATURES • • • • • • • • • •

ZG SOT23-3

Abstract: marking code SOT23 SSs MARKING CODE zh sot23 ZU SOT23-3 sot-23 marking zj 431 SOT23-3 SPS MARKING CODE SOT23-3 zg sot23 ZS MARKING CODE SOT23-3 MAX809SQ293D2T1G
Contextual Info: MAX809 Series, MAX810 Series Very Low Supply Current 3-Pin Microprocessor Reset Monitors The MAX809 and MAX810 are cost-effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components

EEPROM

Abstract: AS8ERLC128K32
Contextual Info: EEPROM AS8ERLC128K32 PIN ASSIGNMENT 128K x 32 Radiation Tolerant EEPROM Top View 68 Lead CQFP RES\ A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc AVAILABLE AS MILITARY SPECIFICATIONS • MIL-PRF-38534 I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND

Contextual Info: 5 1 . S G S -1H 0 M S 0N MSC82302 iy RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS PRE LIM IN A R Y DATA . REFRACTORY/GOLD METALLIZATION . VSWR CAPABILITY 20:1 @ RATED CONDITIONS . HERMETIC STRIPAC PACKAGE • P out = 1.8 W MIN. WITH 10.0 dB GAIN

Contextual Info: B]RSZ ; oEZSOaS YSS^ bVSaS W\ab`cQbW]\a O\R `SdWSe bVS[ PST]`S caW\U bVWa c\Wb| oEZSOaS ]PaS`dS bVS QOcbW]\a bVOb T]ZZ]e4 E`]RcQb [Og PS RO[OUSRz ]` W\Xc`g [Og `SacZb WT W\ab`cQbW]\a O`S \]b T]ZZ]eSR| oHVS T]ZZ]eW\U Wa O\ Sf^ZO\ObW]\ ]T bVS ag[P]Za caSR W\ bVS ]^S`ObW]\ [O\cOZ|

Contextual Info: PRELIMINARY SPECIFICATION EEPROM AS8ERLC128K32 PIN ASSIGNMENT 128K x 32 Radiation Tolerant EEPROM Top View 68 Lead CQFP RES\ A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc AVAILABLE AS MILITARY SPECIFICATIONS • MIL-PRF-38534 compliant I/O0 I/O1

703QB

Contextual Info: PRELIMINARY SPECIFICATION EEPROM AS8ERLC128K32 PIN ASSIGNMENT 128K x 32 Radiation Tolerant EEPROM Top View 68 Lead CQFP RES\ A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc AVAILABLE AS MILITARY SPECIFICATIONS • MIL-PRF-38534 compliant I/O0 I/O1

Contextual Info: HFE4300 High Power LED FEATURES • Non-conductive plastic • Industry standard, SC fiber connector • 850 nm GaAIAs LED • Fiber Dip package style • High reliability construction • Plastic barrel and housing • Wave solderable • Transmitter HFE4300 and receiver (HFD3300)

cfw SOT23

Abstract: p channel mosfet sot-23 fairchild FDV301N SOT23 D FDV302P
Contextual Info: F / M R C H May 1997 I I - D M IC O N D U C T D R ADVANCE INFORMATION th FDC6320C Dual N & P Channel , Digital FET General Description Features These dual N & P Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high

MO-187-AA Package

Abstract: ADG821BRMZ ADG821 ADG822 ADG823 MO-187-AA ADG723
Contextual Info: <1 Ω CMOS, 1.8 V to 5.5 V, Dual SPST Switches ADG821/ADG822/ADG823 FUNCTIONAL BLOCK DIAGRAMS 0.8 Ω maximum on resistance @ 125°C 0.3 Ω maximum on resistance flatness @ 125°C 1.8 V to 5.5 V single supply 200 mA current carrying capability Automotive temperature range: −40°C to +125°C

Contextual Info: E3Srn/t3EE^'»/£i:ElVfcP/Ea:f!P^g£0^ 3/w» / ESK^to ¿E'OT'Cl' 9NIMVUQ _ A\ — d3N 015n0 LV L66t7 on 6 ¿¿0 0 oNirtvaa 300C aovo - azis ¡ ¿ ' I S ™ S-S - M3[A N iH 0 1 V 1 - d N V 1 V S H 3 A 1 N il 'A S S V d 3 Q V 3 H : 033 Old Z

V7420

Abstract: ADG723
Contextual Info: <1 Ω CMOS, 1.8 V to 5.5 V, Dual SPST Switches ADG821/ADG822/ADG823 FUNCTIONAL BLOCK DIAGRAMS 0.8 Ω maximum on resistance @ 125°C 0.3 Ω maximum on resistance flatness @ 125°C 1.8 V to 5.5 V single supply 200 mA current carrying capability Automotive temperature range: −40°C to +125°C