SQ1912 Search Results
SQ1912 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SQ1912AEEH-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 20V POWERPAK SC70-6 | Original | 301.88KB | |||
| SQ1912EH-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2 N-CH 20V 800MA SC70-6 | Original | 259.46KB |
SQ1912 Price and Stock
Vishay Siliconix SQ1912AEEH-T1_GE3MOSFET 2N-CH 20V 0.8A SC70-6 |
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SQ1912AEEH-T1_GE3 | Cut Tape | 25,772 | 1 |
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Vishay Siliconix SQ1912EH-T1_GE3MOSFET 2N-CH 20V 0.8A SC70-6 |
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SQ1912EH-T1_GE3 | Digi-Reel | 21,059 | 1 |
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Khatod Optoelectronic Srl KESQ1912CR35MM MICKEY SELF-ADHESIVE REFLEC |
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KESQ1912CR | Bulk | 76 |
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Vishay Intertechnologies SQ1912EH-T1_GE3- Tape and Reel (Alt: SQ1912EH-T1_GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQ1912EH-T1_GE3 | Reel | 19 Weeks | 3,000 |
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SQ1912EH-T1_GE3 | 184,445 |
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SQ1912EH-T1_GE3 | 3,000 | 3,000 |
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SQ1912EH-T1_GE3 | 3,000 | 53 Weeks | 3,000 |
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SQ1912EH-T1_GE3 | 3,000 | 3,000 |
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SQ1912EH-T1_GE3 | 12,000 | 17 Weeks | 3,000 |
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SQ1912EH-T1_GE3 | Cut Tape | 2,940 | 0 Weeks, 1 Days | 5 |
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SQ1912EH-T1_GE3 | 20 Weeks | 3,000 |
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Vishay Intertechnologies SQ1912AEEH-T1_GE3Transistor MOSFET Array Dual N-CH 20V 0.8A 6-Pin SOT-363 T/R - Tape and Reel (Alt: SQ1912AEEH-T1_GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQ1912AEEH-T1_GE3 | Reel | 19 Weeks | 3,000 |
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SQ1912AEEH-T1_GE3 | 147,086 |
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SQ1912AEEH-T1_GE3 | Cut Tape | 12,485 | 1 |
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SQ1912AEEH-T1_GE3 | 20 Weeks | 3,000 |
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SQ1912 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SQ1912EEH Vishay Siliconix Automotive Dual N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Typical ESD Protection: 800 V • Compliant to RoHS Directive 2002/95/EC |
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SQ1912EEH OT-363 SC-70 AEC-Q101 2002/95/EC SC-70 SQ1912EEH-T1-GE3 25any 18-Jul-08 | |
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Contextual Info: SQ1912EEH www.vishay.com Vishay Siliconix Automotive Dual N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg Tested |
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SQ1912EEH OT-363 SC-70 AEC-Q101 2002/95/EC SC-70 SQ1912EEH-T1-GE3 11-Mar-11 | |
SQ1912EEH-T1-GE3
Abstract: SQ1912EEH
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SQ1912EEH 2002/95/EC AEC-Q101 OT-363 SC-70 18-Jul-08 SQ1912EEH-T1-GE3 SQ1912EEH | |
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Contextual Info: SQ1912EEH www.vishay.com Vishay Siliconix Automotive Dual N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg Tested |
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SQ1912EEH AEC-Q101 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: SQ1912AEEH_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SQ1912AEEH AN609, 9264u 1607m 8760m 7497m 18-Sep-14 | |
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Contextual Info: SQ1912AEEH www.vishay.com Vishay Siliconix Automotive Dual N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET 20 • AEC-Q101 qualified RDS(on) (Ω) at VGS = 4.5 V 0.280 RDS(on) (Ω) at VGS = 2.5 V 0.360 • 100 % Rg tested |
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SQ1912AEEH AEC-Q101 OT-363 SC-70 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
431 T1 6-pin
Abstract: SQ1912
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SQ1912EEH OT-363 SC-70 AEC-Q101 2002/95/EC SC-70 SQ1912EEH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 431 T1 6-pin SQ1912 | |
sot diode marking 303Contextual Info: SQ1912EEH Vishay Siliconix Automotive Dual N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Typical ESD Protection: 800 V • Compliant to RoHS Directive 2002/95/EC |
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SQ1912EEH OT-363 SC-70 AEC-Q101 2002/95/EC SC-70 SQ1912EEH-T1-GE3 25hay 11-Mar-11 sot diode marking 303 | |
DPAK/TO-252Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the |
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Ups-2726 VMN-PL0469-1311 DPAK/TO-252 | |
SQ2315ES
Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
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AEC-Q101 O-262, O-263) VMN-SG2151-1009 SQ2315ES SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10 |