SQ1912AEEH Search Results
SQ1912AEEH Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SQ1912AEEH-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 20V POWERPAK SC70-6 | Original | 301.88KB |
SQ1912AEEH Price and Stock
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Vishay Siliconix SQ1912AEEH-T1_GE3MOSFET 2N-CH 20V 0.8A SC70-6 |
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SQ1912AEEH-T1_GE3 | Cut Tape | 25,772 | 1 |
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Vishay Intertechnologies SQ1912AEEH-T1_GE3Transistor MOSFET Array Dual N-CH 20V 0.8A 6-Pin SOT-363 T/R - Tape and Reel (Alt: SQ1912AEEH-T1_GE3) |
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SQ1912AEEH-T1_GE3 | Reel | 19 Weeks | 3,000 |
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SQ1912AEEH-T1_GE3 | 147,086 |
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SQ1912AEEH-T1_GE3 | Cut Tape | 12,485 | 1 |
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SQ1912AEEH-T1_GE3 | 20 Weeks | 3,000 |
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Vishay Intertechnologies SQ1912AEEH-T1-GE3MOSFETs SOT363 2NCH 20V .8A |
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SQ1912AEEH-T1-GE3 | Reel | 9,000 | 3,000 |
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SQ1912AEEH-T1-GE3 | 20 Weeks | 3,000 |
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Vishay Intertechnologies SQ1912AEEHT1GE3AUTOMOTIVE DUAL N-CHANNEL 20 V (D-S) 175 DEGREE CELSIUS MOSFET Small Signal Field-Effect Transistor, 0.8A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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SQ1912AEEHT1GE3 | 1,923 |
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SQ1912AEEH Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SQ1912AEEH_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SQ1912AEEH AN609, 9264u 1607m 8760m 7497m 18-Sep-14 | |
Contextual Info: SQ1912AEEH www.vishay.com Vishay Siliconix Automotive Dual N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET 20 • AEC-Q101 qualified RDS(on) (Ω) at VGS = 4.5 V 0.280 RDS(on) (Ω) at VGS = 2.5 V 0.360 • 100 % Rg tested |
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SQ1912AEEH AEC-Q101 OT-363 SC-70 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A |