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Contextual Info: SIEMENS SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme dv/dt rated • 150°C operating temperature Type ^DS b SPPX2N60S5 600 V 11.3 A 380 m il
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sppx2n60s5spbx2n60s5x2n60s5p-t0220-3-1+1p-t0263-3-2
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TRANSISTOR SMD CODE 6.8
Abstract: tbd 380 DIODE smd marking Ag MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag SPBX2N60S5 SPPX2N60S5
Contextual Info: SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor •N-Channel •Enhancement mode •Ultra low gate charge •Avalanche rated •dv/dt rated •150°C operating temperature 1 2 3 G D S Type VDS ID RDS on Marking Package Ordering Code SPPX2N60S5
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sppx2n60s5spbx2n60s5x2n60s5p-to220-3-1+7p-to263-3-221/oct/1998transistor smd code 6.8tbd 380diode smd marking agmarking code tbdtransistor smd marking code ag
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transistor ag qs
Abstract: transistor smd hq transistor di 960 TRANSISTOR SMD CODE 6.8
Contextual Info: SIEMENS SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme di//df rated • 150°C operating temperature Type V^DS b SPPX2N60S5 600 V 11.3 A 380 mQ
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sppx2n60s5spbx2n60s5x2n60s5p-t0220-3-1+5p-t0263-3-2transistor ag qstransistor smd hqtransistor di 960transistor smd code 6.8
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11N60S5
Abstract: SPI11N60S5
Contextual Info: SPI11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1
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spi11n60s5sppx2n60s5p-to26211n60s5+1q67040-s4250
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11n60s
Abstract: 11n60 SMD CASE footprint
Contextual Info: SPP11N60S5 SPB11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity
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spp11n60s5spb11n60s5sppx2n60s5/spbx2n60s5p-to220-3-1+6p-to263-3-211n60s5q67040-s419811n60s11n60smd case footprint
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11N60S5 equivalent
Abstract: 11N60s5 1713 11N60 SMD MARKING CODE 10 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 F11A 095
Contextual Info: SPI11N60S5 Preliminary data SPP11N60S5, SPB11N60S5 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity ·
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spi11n60s5spp11n60s5spb11n60s5sppx2n60s5/spbx2n60s5+10p-to220-3-111n60s5q67040-s4198p-to263-3-211n60s5 equivalent171311n60smd marking code 10transistor smd marking code 7af11a 095
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TRANSISTOR SMD MARKING CODE 7A
Abstract: 11N60S5 SPB11N60S5 SPI11N60S5 SPP11N60S5
Contextual Info: SPI11N60S5 SPP11N60S5, SPB11N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated
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spi11n60s5spp11n60s5spb11n60s5p-to262+6p-to263-3-2p-to220-3-1sppx2n60s5/spbx2n60s5q67040-s4198transistor smd marking code 7a11n60s5
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11N60S5
Abstract: SPB11N60S5 SPP11N60S5
Contextual Info: SPP11N60S5 SPB11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:
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spp11n60s5spb11n60s5sppx2n60s5/spbx2n60s5p-to220-3-1+311n60s5q67040-s4198p-to263-3-2
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11N60S5
Abstract: SPP11N60S5 SPB11N60S5
Contextual Info: SPP11N60S5 SPB11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity
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spp11n60s5spb11n60s5sppx2n60s5/spbx2n60s5p-to220-3-1+3p-to263-3-211n60s5q67040-s4198
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