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    SPIN SEMICONDUCTOR Search Results

    SPIN SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3
    Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Datasheet
    TCK423G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK422G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK424G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK401G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Datasheet

    SPIN SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Spin FV-1

    Abstract: echo delay reverb ic fv-1 reverb FV-1 SPIN SPN1001-DS-010408 echo delay reverb echo reverb ic Spin Semiconductor reverb chip ic reverb
    Contextual Info: Spin FV-1 Reverb IC Semiconductor Featuring Spin Semiconductor Virtual Analog Technology Spin Semiconductor FV-1 Reverb IC APPLICATIONS FEATURES ○ Integrated stereo ADC and DAC ○ 8 internal demonstration programs + 8 external programs ○ Easy customization with external EEPROM


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    48khzspn1001spn1001-ds-010408spin fv-1+8echo delay reverb icfv-1 reverbfv-1 spinecho delay reverbecho reverb icspin semiconductorreverb chipic reverb PDF

    FV-1

    Contextual Info: Spin FV-1 Reverb IC Semiconductor Featuring Spin Semiconductor Virtual Analog Technology Spin Semiconductor FV-1 Reverb IC FEATURES ○ Integrated stereo ADC and DAC ○ 8 internal demonstration programs + 8 external programs ○ Easy customization with external EEPROM


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    48khzspn1001spn1001-ds-150413fv-1 PDF

    echo delay reverb ic

    Abstract: delay reverb ic ic reverb echo reverb ic digital reverb ic reverb IC echo delay reverb reverb chip echo reverb ic guitar Spin FV-1
    Contextual Info: Spin FV­1 Reverb IC Semiconductor Spin Semiconductor Featuring Spin Semiconductor Virtual Analog Technology FV­1 Reverb IC FEATURES ○ Integrated stereo ADC and DAC ○ 8 internal demonstration programs + 8 external


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    48khzspn1001spn1001ds120310echo delay reverb ic+9delay reverb icic reverbecho reverb icdigital reverb icreverb icecho delay reverbreverb chipecho reverb ic guitarspin fv-1 PDF

    1N916

    Abstract: MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
    Contextual Info: MOTOROLA Order this document by MBT3904DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed


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    mbt3904dw1t1/dmbt3904dw1t1mbt3906dw1t1mbt3946dw1t1+223/sot1n916 PDF

    MBT3906DWITI

    Abstract: MBT390 MBT3946DW1 MBT3946DWI MBT3904DW1 i7050 MBT3906DW1T1 MBT3946DW1T1 MBT3904DWITI
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MBT3904DWlT1/D DATA — Dual General Purpose Transistors The MBT3904DW1TI, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed


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    mbt3904dwlt1/dmbt3904dw1timbt3906dw1t1mbt3946dw1t1+1123/sotmbt3904dwimbt3906dwimbt3946dwi14wi-247mbt3906dwitimbt390mbt3946dw1mbt3904dw1i7050mbt3904dwiti PDF

    MMBD701LT1

    Contextual Info: ON Semiconductort MMSD301T1 MMSD701T1 SOD-123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications.


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    od-123mmsd301t1mmsd701t1mmbd301lt1+1mmbd701lt1 PDF

    MMBD301LT1

    Abstract: MMBD701LT1 MMSD301T1 MMSD701T1 MMSD101T1 marking 8b sod-123
    Contextual Info: MOTOROLA Order this document by MMSD301T1/D SEMICONDUCTOR TECHNICAL DATA SOD-123 Schottky Barrier Diodes MMSD301T1 MMSD701T1 The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for


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    mmsd301t1/dod-123mmsd301t1mmsd701t1+5mmbd301lt1mmbd701lt1diodesmmsd301t1/dmmsd101t1marking 8b sod-123 PDF

    MBT3906DW

    Abstract: 1N916 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
    Contextual Info: MOTOROLA Order this document by MBT3904DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed


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    mbt3904dw1t1/dmbt3904dw1t1mbt3906dw1t1mbt3946dw1t1+323/sotmbt3906dw1n916 PDF

    sod123 xt

    Contextual Info: ON Semiconductort MMSD301T1 MMSD701T1 SOD-123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin−offs of our popular MMBD301LT1, and MMBD701LT1 SOT−23 devices. They are designed for high−efficiency UHF and VHF detector applications.


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    od-123mmsd301t1mmsd701t1mmbd301lt1+3mmbd701lt1ot-23sod123 xt PDF

    MMBD701LT1

    Abstract: MMBD301LT1 MMSD301T1 MMSD701T1 sod123 xt
    Contextual Info: ON Semiconductort MMSD301T1 MMSD701T1 SOD-123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications.


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    mmsd301t1mmsd701t1od-123mmbd301lt1+4mmbd701lt1r14525mmsd301t1/dsod123 xt PDF

    MMBD301LT1

    Abstract: MMBD701LT1 MMSD301T1 MMSD701T1
    Contextual Info: ON Semiconductort MMSD301T1 MMSD701T1 SOD-123 SCHOTTKY Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications.


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    mmsd301t1mmsd701t1od-123mmbd301lt1+3mmbd701lt1r14525mmsd301t1/d PDF

    MBT3904DW1T1

    Abstract: SOT 363 NP 1N916 MBT3906DW1T1 MBT3946DW1T1
    Contextual Info: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications


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    mbt3904dw1t1mbt3906dw1t1mbt3946dw1t123/sot+2sot 363 np1n916 PDF

    Contextual Info: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications


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    mbt3904dw1t1mbt3906dw1t1mbt3946dw1t123/sot PDF

    TA8517F

    Contextual Info: TOSHIBA TA8517F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8517F HIGH SPEED DUAL COMPARATOR FEATURES • Standard + 5V power supply • TTL OUT • FLP-1 Spin • Inhibit function EQUIVALENT CIRCUIT BLOCK DIAGRAM & PIN CONNECTION TOP VIEW


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    ta8517fta8517flp-16pin PDF

    MC44145

    Contextual Info: Order this document by MC44145/D MC44145 Product Preview Sync Separator/ Pixel Clock Generator The MC44145 Pixel Clock Generator is a component of the MC44000 family, and a spin–off of the PLL2 function of the MC44011, Digital Multistandard Video Processor.


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    mc44145/dmc44145mc44000mc44011 PDF

    image processing asic

    Abstract: envision power board Cyclone camera link ppds altera memory flash
    Contextual Info: Design more features before the next re-spin with Altera PLDs Altera in portable entertainment The MAX II device helps us stay competitive in the extremely pricesensitive consumer electronics market. We have been able to implement digital signal processing


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    ss-01013-1image processing asicenvision power boardcyclone camera link+2ppdsaltera memory flash PDF

    IBM efuse

    Abstract: IBM 11LP rvt capacitor 11-LP ibm sram
    Contextual Info: IBM Global Engineering Solutions CMOS 11LP: A new spin on low-power IBM technology Technology and support: A winning combination for low-power applications IBM Global Engineering Solutions extends the range of its 45-nm technology offerings with CMOS 11LP, an


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    45-nmtgd03012-usen-01ibm efuseibm 11lp+3rvt capacitor11-lpibm sram PDF

    NST3946DP6T5G

    Contextual Info: NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963


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    nst3946dp6t5got-23/sot-323/sot-563ot-963nst3946dp6/d PDF

    Contextual Info: NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963


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    nst3946dp6t5g23/sot323/sotnst3946dp6/d PDF

    MIL-STD-750 method 1037

    Abstract: BC237 BF245 MPF4856
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOD-123 Schottky Barrier Diodes MMSD301T1 MMSD701T1 The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other


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    od-123mmsd301t1mmsd701t1mmbd301lt1+6mmbd701lt1m218amil-std-750 method 1037bc237bf245mpf4856 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded


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    mbt3904dw1t1mbt3906dw1t1mbt3946dw1t123/sot PDF

    MMSD101T1

    Abstract: sod123 xt
    Contextual Info: M O TO RO LA O rder th is docum ent by MMSD101T1/D SEMICONDUCTOR TECHNICAL DATA MMSD101T1 MMSD301T1 MMSD701T1 SOD-123 Schottky Barrier Diodes The MMSD101T1, MMSD301T1, and MMSD701T1 devices are spin-offs of our popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT-23 devices. They


    OCR Scan
    mmsd101t1/dod-123mmsd101t1mmsd301t1+6mmsd701t1mmbd101lt1mmbd301lt1mmbd701lt1ot-23sod123 xt PDF

    schottky diode sod-123 marking code 12

    Abstract: MMBD301LT1 MMBD701LT1 MMSD301T1 MMSD301T1G MMSD701T1 MMSD701T1G marking AAAA sot23
    Contextual Info: MMSD301T1, MMSD701T1 Preferred Device SOD−123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin−offs of our popular MMBD301LT1, and MMBD701LT1 SOT−23 devices. They are designed for high−efficiency UHF and VHF detector applications.


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    mmsd301t1mmsd701t1od-123mmbd301lt1+7mmbd701lt1ot-23mmsd301t1/dschottky diode sod-123 marking code 12mmsd301t1gmmsd701t1gmarking aaaa sot23 PDF

    NPN PNP sot-563

    Abstract: NST3946DP6T5G
    Contextual Info: NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963


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    nst3946dp6t5got-23/sot-323/sot-563ot-963nst3946dp6/d+1npn pnp sot-563 PDF