SPECTRA Search Results

Contextual Info: Plastic Infrared Emitting Diode OP265, OP266 Series A, B, C, D, W Features: • • • • • • T-1 (3 mm) package style Choice of narrow or wide irradiance pattern Choice of dome or flat lens Mechanically and spectrally matched to other OPTEK devices

APA3010P3C

Contextual Info: 3. 0mmx1.0mm RIGHT ANGLE PHOTOTRANSISTOR Part Number: APA3010P3C Features Description zMECHANICALLY AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE APA3010 SERIES INFRARED EMITTING LED LAMP. zWATER CLEAR LENS. zPACKAGE : 2000PCS / REEL.

AP2012SF4C

Contextual Info: 2.0x1.25mm INFRA-RED EMITTING DIODE AP2012SF4C Features Description 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. MECHANICALLY AND SPECTRALLY MATCHED TO THE SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. PHOTOTRANSISTOR. WATER CLEAR LENS. PACKAGE: 2000PCS / REEL.

APL3015F3C-F01

Contextual Info: 3.0X1.5mm INFRA-RED EMITTING DIODE APL3015F3C-F01 Features z3.0mmx1.5mm Description SMT LED, 1.4mm THICKNESS. zMECHANICALLY AND SPECTRALLY MATCHED TO F3 Made with Gallium Arsenide Infrared Emitting diodes. THE PHOTOTRANSISTOR. zWATER CLEAR LENS. zPACKAGE zRoHS

L-7113SF7BT

Contextual Info: T-1 3/4 5mm INFRARED EMITTING DIODE Part Number: L-7113SF7BT Features Description z MECHANICALLY AND SPECTRALLY MATCHED TO SF7 Made with Gallium Aluminum Arsenide Infrared THE PHOTOTRANSISTOR. Emitting diodes. z BLUE TRANSPARENT LENS z RoHS COMPLIANT. Package Dimensions

L-34SF4BT

Contextual Info: T-1 3mm INFRARED EMITTING DIODE Part Number: L-34SF4BT Features Description z MECHANICALLY AND SPECTRALLY MATCHED TO SF4 Made with Gallium Aluminum Arsenide Infrared Emit- THE PHOTOTRANSISTOR. ting diodes. z BLUE TRANSPARENT LENS. z RoHS COMPLIANT. Package Dimensions

AA3528ASF4C

Contextual Info: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528ASF4C-R PRELIMINARY SPEC Features Description z Mechanically and spectrally matched to the phototransistor. SF4 Made with Gallium Aluminum Arsenide Infrared z Package : 1500pcs / reel. Emitting diodes.

phototransistor npn

Abstract: simple phototransistor SEP8506-003 high sensitivity reflective phototransistor phototransistor 600 nm phototransistor datasheet SDP8476 SEP8706 SDP8476-201 SEP8506
Contextual Info: SDP8476-201 Low Light Rejection Phototransistor FEATURES • Side-looking plastic package • Low light level immunity • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF

L-7113SF4BT

Contextual Info: T-1 3/4 5mm INFRARED EMITTING DIODE Part Number: L-7113SF4BT Features Description z MECHANICALLY AND SPECTRALLY MATCHED TO SF4 Made with Gallium Aluminum Arsenide Infrared Emit- THE PHOTOTRANSISTOR. ting diodes. z BLUE TRANSPARENT LENS z RoHS COMPLIANT.

AM4457F3C

Contextual Info: 1.5mm SIDE LOOK INFRARED EMITTING DIODE Part Number: AM4457F3C Features Description z Side looking package. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Mechanically and spectrally matched to the phototransistor. z RoHS compliant. Package Dimensions

KPL-3015SF4C

Contextual Info: 3.0X1.5mm INFRARED EMITTING DIODE Part Number: KPL-3015SF4C Features Description z 3.0mmx1.5mm SMT LED, 1.4mm THICKNESS. SF4 Made with Gallium Aluminum Arsenide Infrared Emit- z MECHANICALLY AND SPECTRALLY MATCHED TO ting diodes. THE PHOTOTRANSISTOR. z WATER CLEAR LENS.

L-32P3C

Abstract: l32p3c
Contextual Info: PHOTOTRANSISTOR Part Number: L-32P3C Features Description z MECHANICALLY AND SPECTRALLY MATCHED TO THE Made with NPN silicon phototansistor chips. INFRARED EMITTING LED LAMP. z WATER CLEAR LENS. z RoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters inches .

KP-1608

Abstract: KP-1608SF4C
Contextual Info: 1.6x0.8mm INFRARED EMITTING DIODE Part Number: KP-1608SF4C Features Description z1.6mmX0.8mm SMT LED, 1.1mm THICKNESS. zMECHANICALLY AND SPECTRALLY MATCHED TO SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. KP-1608 PHOTOTRANSISTOR. zWATER CLEAR LENS.

AP2012F3C

Contextual Info: 2.0x1.25mm INFRA-RED EMITTING DIODE AP2012F3C Features Description 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting MECHANICALLY AND SPECTRALLY MATCHED TO THE diodes. PHOTOTRANSISTOR. WATER CLEAR LENS. PACKAGE: 2000PCS / REEL.

APA3010F3C

Contextual Info: 3.0mmx1.0 mm RIGHT ANGLE INFRARED EMITTING DIODE Part Number: APA3010F3C Features Description z 3.0mmx1.0mm RIGHT ANGLE SMT LED, 2.0mm F3 Made with Gallium Arsenide Infrared Emitting diodes. THICKNESS. z MECHANICALLY AND SPECTRALLY MATCHED TO PHOTOTRANSISTOR.

AP1608

Abstract: AP1608SF4C
Contextual Info: 1.6x0.8mm INFRA-RED EMITTING DIODE AP1608SF4C Features Description 1.6mmX0.8mm SMT LED, 1.1mm THICKNESS. MECHANICALLY AND SPECTRALLY MATCHED TO SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. AP1608 PHOTOTRANSISTOR. W ATER CLEAR LENS. PACKAGE: 2000PCS / REEL .

APA3010P3BT

Contextual Info: 3.0mmx1.0mm RIGHT ANGLE PHOTOTRANSISTOR PRELIMINARY SPEC Part Number: APA3010P3BT Description Features z 3.0mmx1.0mm RIGHT ANGLE SMT LED, 2.0mm THICKNESS. Made with NPN silicon phototansistor chips. z MECHANICALLY AND SPECTRALLY MATCHED TO THE INFRARED EMITTING LED LAMP.

Contextual Info: REV 1 0 E S C R 1 P T IO N N5L 3510/2 RESISTANCE @ 2 FTC I 7•S E P •92 ♦3 MIN. TYP. MAX. UNITS 4. 35 6.5 8.64 KOHMS RESISTANCE OHMS DARK RESISTANCE 5 SEC DARK PK SPECTRAL RESPONSE 43 nm VOLTAGE RATING 100 VOLTS «1 PWR DISSIPATION 125 mw *2 +75 “C

Contextual Info: ( LONEX’è ( SPECTRAL RESPONSE OPTOELECTRONICS SLD-52BG

Contextual Info: SLSD-71N1 SILO NEX Solderable Planar Photodiode Features • Visible to IR spectral range • High reliability, oxide passivation • High open circuit voltage • Linear short circuit current • Low capacitance, high speed • Solderable contacts 0.200 0.040

metal detectors IC

Abstract: Single chip metal detector 5630 5630 metal detectors IC METAL DETECTOR circuit for make metal detector schematic SD5620 SD5630
Contextual Info: SD5620/5630 Optoschmitt Detector FEATURES • TO-46 metal can package • 6¡ nominal acceptance angle • TTL/LSTTL/CMOS compatible • High noise immunity output • Buffer (SD5620) or inverting (SD5630) logic available • Two sensitivity ranges • Mechanically and spectrally matched to

Contextual Info: Tem ic BPV22NF S e m i c o n d u c t o r s Silicon PIN Photodiode Description B PV 22N F is a high speed and high sensitive PIN photo­ diode in a plastic package with a spherical side view lens. T he epoxy package itself is an IR filter, spectrally m atched to G aA s on G aA s and G aA lA s on GaAIAs IR

K423

Abstract: CI 8426
Contextual Info: Temic BPV23NF S e m i c o n d u c t o r s Silicon PIN Photodiode Description B PV 23N F is a high speed and high sensitive PIN photo­ diode in a plastic package w ith a spherical side view lens. T he epoxy package itself is an IR filter, spectrally m atched to G aA s on GaA s and G aA lA s on G aA lA s IR

Contextual Info: Tem ic TSUS540. S e m i c o n d u c t o r s GaAs Infrared Emitting Diodes in 0 5 mm T-13A Package Description TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package. The devices are spectrally