SPA07N65C3 Search Results
SPA07N65C3 Datasheets (3)
Infineon Technologies
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SPA07N65C3 | Infineon Technologies | Cool MOS Power Transistor | Original | 300.78KB | 14 | ||
| SPA07N65C3 | Infineon Technologies | N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 650.0 V; Package: TO-220 FullPAK; RDS(ON) @ TJ=25°C VGS=10: 600.0 mOhm; ID(max) @ TC=25°C: 7.3 A; IDpuls (max): 21.9 A; | Original | 669.15KB | 15 | ||
| SPA07N65C3XKSA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 7.3A TO-220 | Original | 391.21KB |
SPA07N65C3 Price and Stock
Infineon Technologies AG
Infineon Technologies AG SPA07N65C3XKSA1Power Field-Effect Transistor, 7.3A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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SPA07N65C3XKSA1 | 203 | 1 |
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SPA07N65C3XKSA1 | 4,488 |
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