SOT89 H A Search Results

Contextual Info: Package Information SOT89 Outline Dimensions 3-pin SOT89 Outline Dimensions I A J B C E D G F Symbol H Dimensions in inch Min. Nom. Max. A 0.173 ¾ 0.181 B 0.059 ¾ 0.072 C 0.090 ¾ 0.102 D 0.035 ¾ 0.047 E 0.155 ¾ 0.167 F 0.014 ¾ 0.019 G 0.017 ¾ 0.022

FCX653

Contextual Info: FCX653 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES * FAST SWITCHING. * LOW SATURATION VOLTAGE. * H fe UP TO 6A PULSED. * 2A Ic CONTINUOUS. * COM PLEMENTARY TYPE - FCX753. PARTMARKING DETAILS - N8 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage

Contextual Info: • 0Q2HS31} TST H A P X N AUER PHILIPS/DISCRETE BCV28 BCV48 b7E » y v SMALL-SIGNAL DARLINGTON TRANSISTOR PNP small-signal darlington transistors, housed in a microminiature envelope SOT89 . NPN complementary types are BCV29/49. QUICK REFERENCE DATA BCV28

Contextual Info: LtiS3T31 0035055 585 H A P X Philips Semiconductors N A PIER PHILIPS/DISCRETE Product specification b7E » NPN 1 GHz wideband transistor DESCRIPTION £ BFQ17 PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The

Contextual Info: bbS3T31 QQE5T70 TET H A P X N AMER PHILIPS/DISCRETE PXT2907/A b?E D SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended fo r switching and linear applications. The complementary type is PXT2222/A.

transistor P2F

Abstract: MARKING P2F P2B MARKING CODE MARKING H3B p2F 45 IEC134 PXT2907 PXT2907A 1961 30 TRANSISTOR ON MARKING P2F
Contextual Info: 711005b □ f l 2 fl • P H I N PXT2907/A SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended fo r switching and linear applications. The complementary type is PXT2222/A. QUICK REFERENCE DA TA

41e magnetic sensor

Abstract: 4SS1630
Contextual Info: HONEYUELL INC/ MICRO SSI 41E D • 7=C>B'^S 4SS1630 0013571 2 B H O N 1 Digital position sensors MOUNTING DIMENSIONS For reference only m FEATURES • Small-size SOT89 style package (.177 X .136 X .059 in.) surface mounts on PC boards and flexible circuits

Contextual Info: SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424Z ISSUE 1 - NOVEMBER 1998_ FEATURES * 240 V o lt BV ds * E x tre m e ly lo w RDS on =^-3£2 * L o w th re s h o ld and Fast s w itc h in g APPLICATIO NS * Earth recall and d ia llin g sw itch e s

Contextual Info: • ^53^31 QD2Sbn T3T H A P X N AUER PHILIPS/DISCRETE BSS87 b7E ]> J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in a SOT89 envelope. Designed prim arily as a line current interrupter in telephone sets, it can also be applied in other

Contextual Info: SOT89 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP4424Z ISSUE 1 - NOVEMBER 1998 FEATURES * 240 V o lt V DS R D S on = 8 8 n t y P ' 0 3 ' a t V G S = - 3 -5 V * L o w th re s h o ld and Fast s w itc h in g APPLICATIO NS * E le ctro n ic h o o k s w itch e s

Contextual Info: Package information - SOT89 Surface mounted, 4 pin package Package outline D A C D1 E H E1 L B e B1 DIM e1 Millimeters Inches Min Max Min Max A 1.40 1.60 0.550 0.630 B 0.44 0.56 0.017 B1 0.36 0.48 C 0.35 D D1 DIM Millimeters Inches Min Max Min Max E 2.29 2.60

Contextual Info: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX617 ISSSU E 1 - NOVEMBER 1998 FEATU RES * 2W POWER D IS S IP A T IO N * * * * 12A Peak Pu lse Current Exce lle n t H FE C h a ra cte ristics up to 12 A m p s Extre m e ly Lo w S a tu ra tio n V o lta ge E.g. 8 m v T y p .

Contextual Info: bb53T31 DD25bS3 ITfl H A P X N AMER PHILIPS/DISCRETE BST84 b?E D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in SOT89 envelope and designed fo r use as line current inter­ rupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers.

Contextual Info: SOT89 P CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2106Z FEATU RES * PARTM ARKIN G D E T A IL -Z V P 2 1 0 6 Z -P 1 6 FOR T Y P IC A L C H A R A C T E R IS T IC S G R A P H S S E E ZVP2106G D A TA SH EET. ABSOLUTE MAXIMUM RATINGS SYM BOL PARAMETER Drain-Source Voltage

Diode Mark N10

Abstract: BZV49 diode GF M
Contextual Info: SOT89 NPN SWITCHING TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter V CE sa O Max h -E Type v CBO v CEO ^C(cont P lo t V V mA W FCX2369A 40 15 500 1.0 40/120 FCX2369 40 15 500 1.0 40/120 M in/M ax at lc / V ce m A / Volts Part Mark Code Volts at l c / Iß

P5* RF SOT89

Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSU E 3 -M A R C H 1996 _ FEATURES * 400 V olt V,CEO P,or 1 W att C O M P LEM EN T A R Y TYPE - FCX458 P A R T M A R K IN G D E T A IL - P58 ABSOLUTE M A X IM U M RATINGS. PARAMETER Collector-Base Voltage

Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1147A ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER D IS S IP A T IO N * * * * 20A Peak Pulse C urrent E xce lle n t HFE C h a ra cte ristics up to 20 A m p s E x tre m e ly L o w S a tu ra tio n V o lta g e E.g. 2 5 m v Typ.

F 540 NS

Abstract: F540NS LB-40
Contextual Info: SOT89 NPN SILICON POWER FCX1051A SWITCHING TRANSISTOR ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER D IS S IP A T IO N * * * * 10A Peak Pulse C urrent E xce lle n t HFE C h a ra cte ristics up to 10 A m p s E x tre m e ly L o w S a tu ra tio n V o lta g e E.g. 1 7 m v Typ.

Contextual Info: SOT89 PNP SILICON POWER FCX718 SWITCHING TRANSISTOR ISSSUE 1 - DECEMBER 1998 FE A TU R E S * 2W POWER D IS S IP A T IO N * 6A Peak Pulse C urrent * E xcellen t H FE C haracteristics up to 6A m p s * E x tre m e ly Lo w S a tu ra tio n V o lta g e E.g. 1 6 m v T y p .

FCX749

Contextual Info: FCX749 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FEATU RES * * * F A S T SW ITCH IN G . LO W SA T U R A T IO N V O LTA G E . H fe UP TO 6A P U LSED . * * 2 A lc CO N TIN U O U S. CO M P LEM EN TA R Y T Y P E - FCX649. PARTM ARKIN G D E T A ILS - N6

LB50M

Contextual Info: SOT89 NPN SILICON POWER FCX1047A SWITCHING TRANSISTOR ISSSUE 2 - DECEMBER 1998 FEATURES * 2W POWER D IS S IP A T IO N * * * * 20A Peak Pulse C urrent E xce lle n t HFE C h a ra cte ristics up to 20 A m p s E x tre m e ly L o w S a tu ra tio n V o lta g e E.g. 2 5 m v Typ.

FCX649

Abstract: FCX749 lem lc 300
Contextual Info: FCX649 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FE A T U R E S * * F A S T SW ITCH IN G . LOW S A T U R A TIO N V O LTA G E . * * H fe UP TO 6A PU LSED . 2 A lc CO N TIN U O U S. * CO M P LEM EN TA R Y T YP E - FCX749. PAR TM A R KIN G D E TA ILS - N3

a40600

Contextual Info: FCX753 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES * F A S T SW ITCH IN G . * LO W S A T U R A T IO N VO LTAG E. * H fe UP TO 6A PU LSED . * 2A lc C O N T IN U O U S. * C O M P L E M E N T A R Y TY PE - FCX653. P A R T M A R K IN G D E T A IL S - P8

Contextual Info: SOT89 PNP SILICON POWER FCX789A SWITCHING TRANSISTOR ISSSUE 1 -NOVEMBER 1998 FEATURES * 2W POWER D IS S IP A T IO N * * * 8 A Peak Pulse C urrent E xcellent HFE C h a ra cte ristics up to 10 A m p s L o w S a tu ra tio n V o lta g e E.g. lO m v T y p . C o m p lim e n ta ry T yp e P a rtm a rkin g D etail -