SOT89 H A Search Results
SOT89 H A Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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74AC11000N |
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Quadruple 2-Input Positive-NAND Gates 16-PDIP -40 to 85 |
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74AC11004DW |
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Hex Inverters 20-SOIC -40 to 85 |
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74AC11074D |
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Dual Positive-Edge-Triggered D-Type Flip-Flops With Clear and Preset 14-SOIC -40 to 85 |
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74AC11244PWR |
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Octal Buffers/Drivers 24-TSSOP -40 to 85 |
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74AC11257N |
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Quadruple 2-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 20-PDIP -40 to 85 |
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SOT89 H A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Package Information SOT89 Outline Dimensions 3-pin SOT89 Outline Dimensions I A J B C E D G F Symbol H Dimensions in inch Min. Nom. Max. A 0.173 ¾ 0.181 B 0.059 ¾ 0.072 C 0.090 ¾ 0.102 D 0.035 ¾ 0.047 E 0.155 ¾ 0.167 F 0.014 ¾ 0.019 G 0.017 ¾ 0.022 |
Original |
OT89-3 | |
FCX653Contextual Info: FCX653 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES * FAST SWITCHING. * LOW SATURATION VOLTAGE. * H fe UP TO 6A PULSED. * 2A Ic CONTINUOUS. * COM PLEMENTARY TYPE - FCX753. PARTMARKING DETAILS - N8 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage |
OCR Scan |
FCX753. FCX653 100mA 500mA, 100mA, 100MHz 300fxs. DS149 FCX653 | |
Contextual Info: • 0Q2HS31} TST H A P X N AUER PHILIPS/DISCRETE BCV28 BCV48 b7E » y v SMALL-SIGNAL DARLINGTON TRANSISTOR PNP small-signal darlington transistors, housed in a microminiature envelope SOT89 . NPN complementary types are BCV29/49. QUICK REFERENCE DATA BCV28 |
OCR Scan |
0Q2HS31 BCV28 BCV48 BCV29/49. | |
Contextual Info: LtiS3T31 0035055 585 H A P X Philips Semiconductors N A PIER PHILIPS/DISCRETE Product specification b7E » NPN 1 GHz wideband transistor DESCRIPTION £ BFQ17 PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The |
OCR Scan |
LtiS3T31 BFQ17 MSB013 9B364 | |
Contextual Info: bbS3T31 QQE5T70 TET H A P X N AMER PHILIPS/DISCRETE PXT2907/A b?E D SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended fo r switching and linear applications. The complementary type is PXT2222/A. |
OCR Scan |
bbS3T31 QQE5T70 PXT2907/A PXT2222/A. PXT2907 PXT2907A | |
transistor P2F
Abstract: MARKING P2F P2B MARKING CODE MARKING H3B p2F 45 IEC134 PXT2907 PXT2907A 1961 30 TRANSISTOR ON MARKING P2F
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OCR Scan |
711005b PXT2907/A PXT2222/A. PXT2907 PXT2907A transistor P2F MARKING P2F P2B MARKING CODE MARKING H3B p2F 45 IEC134 PXT2907 PXT2907A 1961 30 TRANSISTOR ON MARKING P2F | |
41e magnetic sensor
Abstract: 4SS1630
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OCR Scan |
4SS1630 SS11T) SS16T) SS14A SS14AT) SS14B SS14BT) D013E72 SS14A 41e magnetic sensor | |
Contextual Info: SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424Z ISSUE 1 - NOVEMBER 1998_ FEATURES * 240 V o lt BV ds * E x tre m e ly lo w RDS on =^-3£2 * L o w th re s h o ld and Fast s w itc h in g APPLICATIO NS * Earth recall and d ia llin g sw itch e s |
OCR Scan |
ZVP4424Z ZVN4424Z | |
Contextual Info: • ^53^31 QD2Sbn T3T H A P X N AUER PHILIPS/DISCRETE BSS87 b7E ]> J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in a SOT89 envelope. Designed prim arily as a line current interrupter in telephone sets, it can also be applied in other |
OCR Scan |
BSS87 D025b21 | |
Contextual Info: SOT89 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP4424Z ISSUE 1 - NOVEMBER 1998 FEATURES * 240 V o lt V DS R D S on = 8 8 n t y P ' 0 3 ' a t V G S = - 3 -5 V * L o w th re s h o ld and Fast s w itc h in g APPLICATIO NS * E le ctro n ic h o o k s w itch e s |
OCR Scan |
ZVP4424Z ZVN4424Z | |
Contextual Info: Package information - SOT89 Surface mounted, 4 pin package Package outline D A C D1 E H E1 L B e B1 DIM e1 Millimeters Inches Min Max Min Max A 1.40 1.60 0.550 0.630 B 0.44 0.56 0.017 B1 0.36 0.48 C 0.35 D D1 DIM Millimeters Inches Min Max Min Max E 2.29 2.60 |
Original |
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Contextual Info: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX617 ISSSU E 1 - NOVEMBER 1998 FEATU RES * 2W POWER D IS S IP A T IO N * * * * 12A Peak Pu lse Current Exce lle n t H FE C h a ra cte ristics up to 12 A m p s Extre m e ly Lo w S a tu ra tio n V o lta ge E.g. 8 m v T y p . |
OCR Scan |
FCX617 | |
Contextual Info: bb53T31 DD25bS3 ITfl H A P X N AMER PHILIPS/DISCRETE BST84 b?E D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in SOT89 envelope and designed fo r use as line current inter rupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers. |
OCR Scan |
bb53T31 DD25bS3 BST84 | |
Contextual Info: SOT89 P CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2106Z FEATU RES * PARTM ARKIN G D E T A IL -Z V P 2 1 0 6 Z -P 1 6 FOR T Y P IC A L C H A R A C T E R IS T IC S G R A P H S S E E ZVP2106G D A TA SH EET. ABSOLUTE MAXIMUM RATINGS SYM BOL PARAMETER Drain-Source Voltage |
OCR Scan |
ZVP2106G ZVP2106Z -500m -500mA -500mA DS394 | |
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Diode Mark N10
Abstract: BZV49 diode GF M
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OCR Scan |
FCX2369A FCX2369 BZV49 BAW79D BAW79C BAW79B BAW79A 200mA, BAW78D BAW78C Diode Mark N10 diode GF M | |
P5* RF SOT89Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSU E 3 -M A R C H 1996 _ FEATURES * 400 V olt V,CEO P,or 1 W att C O M P LEM EN T A R Y TYPE - FCX458 P A R T M A R K IN G D E T A IL - P58 ABSOLUTE M A X IM U M RATINGS. PARAMETER Collector-Base Voltage |
OCR Scan |
FCX558 FCX458 -320V; -20mA, -50mA, FZT558 P5* RF SOT89 | |
Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1147A ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER D IS S IP A T IO N * * * * 20A Peak Pulse C urrent E xce lle n t HFE C h a ra cte ristics up to 20 A m p s E x tre m e ly L o w S a tu ra tio n V o lta g e E.g. 2 5 m v Typ. |
OCR Scan |
FCX1147A FCX1047A -30mA* -10mA, -50mA, 50MHz -40mA, | |
F 540 NS
Abstract: F540NS LB-40
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OCR Scan |
FCX1051A FCX1151A 100MHz 300ns. F 540 NS F540NS LB-40 | |
Contextual Info: SOT89 PNP SILICON POWER FCX718 SWITCHING TRANSISTOR ISSSUE 1 - DECEMBER 1998 FE A TU R E S * 2W POWER D IS S IP A T IO N * 6A Peak Pulse C urrent * E xcellen t H FE C haracteristics up to 6A m p s * E x tre m e ly Lo w S a tu ra tio n V o lta g e E.g. 1 6 m v T y p . |
OCR Scan |
FCX718 | |
FCX749Contextual Info: FCX749 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FEATU RES * * * F A S T SW ITCH IN G . LO W SA T U R A T IO N V O LTA G E . H fe UP TO 6A P U LSED . * * 2 A lc CO N TIN U O U S. CO M P LEM EN TA R Y T Y P E - FCX649. PARTM ARKIN G D E T A ILS - N6 |
OCR Scan |
FCX749 FCX649. -100mA* -200mA -100m -50mA, -100mA, 100MHz -500mA, 000fi325 FCX749 | |
LB50MContextual Info: SOT89 NPN SILICON POWER FCX1047A SWITCHING TRANSISTOR ISSSUE 2 - DECEMBER 1998 FEATURES * 2W POWER D IS S IP A T IO N * * * * 20A Peak Pulse C urrent E xce lle n t HFE C h a ra cte ristics up to 20 A m p s E x tre m e ly L o w S a tu ra tio n V o lta g e E.g. 2 5 m v Typ. |
OCR Scan |
FCX1047A FCX1147A 50MHz LB50M | |
FCX649
Abstract: FCX749 lem lc 300
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OCR Scan |
FCX649 FCX749. 100mA 200mA 100mA, 100MHz 500mA, FCX649 FCX749 lem lc 300 | |
a40600Contextual Info: FCX753 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES * F A S T SW ITCH IN G . * LO W S A T U R A T IO N VO LTAG E. * H fe UP TO 6A PU LSED . * 2A lc C O N T IN U O U S. * C O M P L E M E N T A R Y TY PE - FCX653. P A R T M A R K IN G D E T A IL S - P8 |
OCR Scan |
FCX753 FCX653. -100nA -10mA -100V -200mA -100mA -50mA, -500mA, a40600 | |
Contextual Info: SOT89 PNP SILICON POWER FCX789A SWITCHING TRANSISTOR ISSSUE 1 -NOVEMBER 1998 FEATURES * 2W POWER D IS S IP A T IO N * * * 8 A Peak Pulse C urrent E xcellent HFE C h a ra cte ristics up to 10 A m p s L o w S a tu ra tio n V o lta g e E.g. lO m v T y p . C o m p lim e n ta ry T yp e P a rtm a rkin g D etail - |
OCR Scan |
FCX789A FCX688B 15x15x0tput -50mA, 50MHz -500mA, -50mA 300ns. |