SOT89 CA 19 Search Results

Contextual Info: SC1638 3 Dc SDcco n Pv e r t e r January 30, 1998 TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.conn DESCRIPTION FEATURES The SC1638 is a high efficiency step up DC-DC converter, particularly suitable for pager applications, using 1 to 2 battery cells. Only 3 external components

9-GHz

Abstract: TOP MARKING C1 ROHM C100 ECG009 JESD22-A113-B MCH185A560JK marking c7 sot-89 JESD22-A108-A ROHM SOT89 MARKING resistor de 27k ohm
Contextual Info: PRODUCTION DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications „ „ DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz

GB11

Abstract: MSW11GB11-S89T MWS11GB11-G1 MWS11GB11-S1
Contextual Info: C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW This RFIC amplifier is initially available in a plastic SOT-89 3-Pin package to handle P1dB output power up to 19dBm 5V . The same RFIC will be available later in an advanced Microsemi

JESD22-A113-B

Abstract: EC-1019
Contextual Info: EC-1019 PRODUCTION DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 3000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 3000 MHz 18.5 dB Gain at 1000 MHz 19 dBm Output P1dB at 1000 MHz 34 dBm Output IP3 at 1000 MHz 5.5 dB Noise Figure at 2000 MHz

PLCC-6 5050

Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
Contextual Info: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case

30 micro farad capacitor 6000 volt

Abstract: HBT transistor j1 05075 ECG014 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660
Contextual Info: PRELIMINARY DATA SHEET ECG014 BROADBAND HIGH OIP3 AMPLIFIER 50 - 2000 MHz Features Applications n n n n n n n 50 to 2000 MHz 42 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.5 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz Excellent Stability

Contextual Info: MwT-A989SB 0.5-4 GHz Packaged FET June 2006 Features: • • • • • Designed for single voltage operations Ideal for 0.5 – 4.0 GHz High Linearity / High Dynamic Range Applications Excellent RF Performance: o 40 dBm IP3 o 65 dBc ACPR o 25 dBm P1dB o 17 dB SSG @ 2000MHz

InP HBT transistor

Abstract: HBT transistor BJT datasheet with i-v characteristics 1 micro farad capacitor high end amplifier schematics ECG003 MOTOROLA RF TRANSISTORS srf
Contextual Info: PRELIMINARY DATA SHEET ECG003 BROADBAND HIGH OIP3 AMPLIFIER DC - 3000 MHz Features Applications n n DC to 3000 MHz 39 dBm Typical OIP3 at 900 MHz 36 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 900 MHz

TN2524

Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110
Contextual Info: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)

VN2460N8-G

Abstract: TRANSISTOR LIZ
Contextual Info: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with

VN2450N8-G

Abstract: vn4ew
Contextual Info: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with

Contextual Info: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs General Description Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain

marking AL sot89

Abstract: BP317 BST15 BST16 BST39 BST40
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BST39; BST40 NPN high-voltage transistors Product specification Supersedes data of 1997 May 22 1999 Apr 26 Philips Semiconductors Product specification NPN high-voltage transistors BST39; BST40 FEATURES

2108 npn transistor

Abstract: marking code P1D BP317 PXTA42 PXTA92
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXTA42 NPN high-voltage transistor Product specification Supersedes data of 1997 Jun 18 1999 Apr 26 Philips Semiconductors Product specification NPN high-voltage transistor PXTA42 FEATURES PINNING • Low current max. 100 mA

Contextual Info: Supertex inc. CL25 Simple 90V, 25mA, Temperature Compensated, Constant Current, LED Driver IC Features General Description 5.0 - 90V operating range VA-B 25mA ±10% at 5.0 - 90V 0.01%/°C typical temperature coeficient No external components (two terminal device)

Contextual Info: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low input and output leakage Low CISS and fast switching speeds High input impedance and high gain This enhancement-mode normally-off transistor utilizes a

CL2N8-G

Abstract: A0519
Contextual Info: CL2 Simple 90V, 20mA, Temperature Compensated Constant Current LED Driver IC Features General Description ► ► ► ► The Supertex CL2 is a high voltage, temperature compensated, constant current source. The device is trimmed to provide a constant current of 20mA±10% at an input voltage of 5.0

JEDEC to 243

Abstract: 4 to 20ma current source circuit diagram marking code RAB AA
Contextual Info: CL1 Simple, 90V, 20mA, Temperature Compensated, Constant Current, LED Driver IC Features General Description ► ► ► ► The Supertex CL1 is a high voltage, temperature compensated, constant current source. The device is trimmed to provide a constant current of 20mA±5% at an input voltage of 45V. No

StR 40000

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BCV29; BCV49 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 21 1999 Apr 08 Philips Semiconductors Product specification NPN Darlington transistors BCV29; BCV49 FEATURES

transistor bt2

Abstract: 7430 ic data sheet BST16 BP317 BST15 BST39 BST40
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BST15; BST16 PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 22 Philips Semiconductors Product specification PNP high-voltage transistors

VP3203N3-G

Abstract: sivp
Contextual Info: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP3203 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

7430 ic data sheet

Abstract: data sheet IC 7430 Philips MARKING CODE Thermal considerations for SOT89 ALL SOT89 copper mumbai so sot89 SOT89 MARKING CODE 43 str 6707 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BST39; BST40 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 22 Philips Semiconductors Product specification NPN high-voltage transistors

PNP TRANSISTOR SOT89

Abstract: PXTA14 BP317 PXTA64
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXTA64 PNP Darlington transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 24 Philips Semiconductors Product specification PNP Darlington transistor

LF 358

Abstract: SOT89 marking cec BC868 BC869 BC869-16 BC869-25
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC869 PNP medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 01 Philips Semiconductors Product specification PNP medium power transistor