SOT89 43 Search Results

rf sot89 50

Contextual Info: MMA500 DC to 6 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA500 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance with RoHS compliance.

Aeroflex Microelectronic Solutions

Abstract: rf sot89 50 MMA500
Contextual Info: MMA500 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA500 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance with RoHS compliance.

mma500

Abstract: 05OUR
Contextual Info: MMA500 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA500 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance with RoHS compliance.

Contextual Info: OBSOLETE - PLEASE USE ZXTP2008Z ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state

MMA705

Contextual Info: MMA705 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA705 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 4 GHz Broadband Gain Block

MMA704

Abstract: rf sot89
Contextual Info: MMA704 DC to 3.7 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA704 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 3.7 GHz Broadband Gain Block

MMA500

Contextual Info: MMA500 DC to 6 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA500 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 6 GHz Broadband Gain Block

ZXTP2008Z

Abstract: ZXTP2008ZTA
Contextual Info: ZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and

Contextual Info: ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

PNP TRANSISTOR SOT89

Abstract: sc 107 transistor SC-62 C1 SOT89 PBSS4250X PBSS5540Z PXTA14 audio power amplifiers with transistors PBSS9110Z PBSS5320X
Contextual Info: Semiconductors Date of release: September 2004 Philips’ medium power transistor portfolio in SOT89 SC-62 and SOT223 (SC-73) General features Portfolio overview • Available in the biggest small-signal packages SOT89 (SC-62) and SOT223 (SC-73) • Bridging the gap between DPAK power transistors

Contextual Info: Not Recommended for New Design Please Use ZXTP2008ZTA ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state

PBSS302NX

Abstract: PBSS301NX PBSS303NX PBSS4250X PBSS4320X PBSS4330X PBSS4350X PBSS4520X PBSS4540X mse267
Contextual Info: Ultra low VCEsat BISS transistors in SOT89 (SC-62) 5.3 A continuous collector current in small medium power package Looking to reduce power consumption and create smaller end products? Then look no further than NXP ultra low VCEsat (BISS) transistors in SOT89 (SC-62). Housed in a medium-power package, these

ZX5T949Z

Abstract: ZX5T949ZTA SOT89 transistor marking 5A
Contextual Info: ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

Contextual Info: ZXTP2008Z 30V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line sw itching and

Contextual Info: SOT89 NPN SILICON PLANAR M ED IU M POWER TRANSISTORS ISSUE 3 - FEBRUARY 1996 CO M PLEM ENTARY TYPES BSR41 BSR43 O - BSR43 - BSR33 BSR41 - BSR31 P A R T M A R K IN G D E T A IL - BSR43 - AR4 BSR41 - AR2 B SOT89 ABSOLUTE M A X IM U M RATINGS. PARAM ETER BSR41

Contextual Info: ECG050 The Communications Edge TM InGaP HBT Gain Block Product Features • DC – 4 GHz • +19 dBm P1dB at 1 GHz • +34 dBm OIP3 at 1 GHz • 19 dB Gain at 1 GHz • 5.5 dB Noise Figure at 2 GHz • Available in SOT-86, SOT89 and lead-free / green SOT89 Package Styles

SOT89 MARKING CODE 944

Contextual Info: ECG050 The Communications Edge TM InGaP HBT Gain Block Product Features • DC – 4 GHz • +19 dBm P1dB at 1 GHz • +34 dBm OIP3 at 1 GHz • 19 dB Gain at 1 GHz • 5.5 dB Noise Figure at 2 GHz • Available in SOT-86, SOT89 and lead-free / green SOT89 Package Styles

BSS89 APPLICATION

Abstract: BST110 bsp106 bsn254 BS-208 BSN20 to92
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs VERTICAL D-MOSFETS OVERVIEW N/P leaded channel TO-92 other PRODUCT DATA: PA G E S 43-45 surface-mount main SOT23 SOT89 SOT223 application

ZENER DIODE 15Y

Abstract: Zener diode 16y c5v1 zener diode c30 C30 DIODE ZENER 16y zener C4V7 22y diode C3V9 zener diode 11y
Contextual Info: BZV49 SERIES C2V7 - C47 SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage Range Nominal Tolerance Maximum Forward Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range vz

bzv49

Abstract: c4v3 c8v2 C3939
Contextual Info: SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES iSSUE 3 - NO VEM BER 1995 O ABSOLUTE MAXIMUM RATINGS as per Electron Coding Sytemj. PARAMETER SYMBOL Voltage Range V-, N om inal Tolerance C M axim um Forward Current Power Dissipation at Tamb=25'-'C VALUE I 3.9 to 43

Contextual Info: • bbSB'iai DDESTb? 435 » A P X N AMER PHILIPS/DISCRETE P XT2222/A b?E D ;v SILICON PLANAR EPITAXIAL TRANSISTOR NPN silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended for switching and linear applications. The complementary type is PXT2907/A.

Contextual Info: DRAFT RF3315 DRAFT RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND RoHS Compliant & Pb-Free Product Package Style: SOT89 Features +40dBm Output IP3 „ 12.5dB Gain at 2.0GHz „ +23dBm P1dB „ „ 3.0dB Typical Noise Figure at

BF469

Abstract: BF420.423 2N5415
Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors PRODUCT DATA: PAGES 29-31 HIGH-VOLTAGE TRANSISTORS OVERVIEW NPN leaded TO-39 surface-mount TO-92 TO-126 TO-202 SOT23 SOT89 SOT223

C5V1

Abstract: C4V7 c24 zener BZV4 BZV49
Contextual Info: I SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES ISSUE 3 - NOVEMBER 1995 BZV49 SERIES O_ ' ABSOLUTE MAXIMUM RATINGS as per Electron Coc ing Sytem . PARAMETER SYMBOL Voltage Range Nominal Tolerance Maximum Forward Current Power Dissipation at Tamb=25“C