SOT595 Search Results

Contextual Info: Package outline BGA208: plastic ball grid array package; 208 balls; body 17 x 17 x 1.2 mm SOT595-1 B D A D1 ball A1 index area A A2 E1 E A1 detail X C e1 b 1/2 e e y y1 C ∅v M C A B ∅w M C T e R P N M L K J e2 H G 1/2 e F E D C B A 1 shape optional 4x

Contextual Info: PC board footprint Philips Semiconductors Footprint information for reflow soldering of BGA208 package SOT595-1 Hx P P Hy see detail X Generic footprint pattern Refer to the package outline drawing for actual layout solder land solder paste deposit solder land plus solder paste

bga208

Abstract: sot595 package outline bga208
Contextual Info: PDF: 2000 Mar 07 Philips Semiconductors Package outline BGA208: plastic ball grid array package; 208 balls; body 17 x 17 x 1.20 mm SOT595-1 B D A D1 ball A1 index area A A2 E1 E A1 detail X k k e1 b e C v M B ∅w M y y1 C v M A T R e P N M L K J e1 H G F

package outline bga208

Abstract: SOT-595 BGA208 MS-034
Contextual Info: PDF: 2003 Jan 24 Philips Semiconductors Package outline BGA208: plastic ball grid array package; 208 balls; body 17 x 17 x 1.2 mm SOT595-1 B D A D1 ball A1 index area A A2 E1 E A1 detail X C e1 ∅v M C A B b 1/2 e e y y1 C ∅w M C T e R P N M L K J e2 H

ssop-5 footprint

Abstract: AN10161 philips naming convention SSOP-5 0.65 sot59 MO178 MO-203 SSOP5-P-0-65A SC70-5 SC74A
Contextual Info: INTEGRATED CIRCUITS ABSTRACT Different suppliers have introduced single-, dual-, and triple-gate devices, with many different names. This application note discusses the different call-outs for the various packages and provides the reader with a comparison of the drawings from different vendors.

ssop-5 footprint

Abstract: SOT753 footprint sot59 us8 Package SOT353 footprint AN10161 MO178 SC70-5 SC74A SC88A
Contextual Info: INTEGRATED CIRCUITS ABSTRACT Different suppliers have introduced single-, dual-, and triple-gate devices, with many different names. This application note discusses the different call-outs for the various packages and provides the reader with a comparison of the drawings from different vendors.

SSOP5-P-0-65A

Abstract: AN10161 MO178 MO-203 SC59 SC70-5 SC74A SC88A philips naming convention philips package designator
Contextual Info: INTEGRATED CIRCUITS ABSTRACT Different suppliers have introduced single-, dual-, and triple-gate devices, with many different names. This application note discusses the different call-outs for the various packages and provides the reader with a comparison of the drawings from different vendors.

pin diagram of bf 494 transistor

Abstract: TA 8825 AN SOT-595 TA 8825 SCT-595 RF POWER marking 556 PIN CONFIGURATION IC ne 555 BF 949 transistor 09326 TRANSISTOR BO 346
Contextual Info: SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data 4 • For high power amplifiers 5 • Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency fT > 17 GHz 3 2 • Gold metalization for high reliability

pin diagram of bf 494 transistor

Abstract: siemens products transistor
Contextual Info: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P-idB = 26 5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency f j > 17 GHz • Gold metalization for high reliability

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

093.266

Abstract: pin diagram of bf 494 transistor b 595 transistor schematic PA 1515 transistor transistor BF 502
Contextual Info: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Prelim inary data • For high power amplifiers • Compression point P_1dB = 26.5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency ^ > 1 7 GHz • Gold metalization for high reliability