SOT502D Search Results

Contextual Info: Package outline Eared flanged ceramic package; 2 leads; 2 mounting holes SOT502D 0.4 mm gauge plane D A Lp F D1 detail X U1 B q v w2 b A c B X 1 3 H U2 E1 p w1 2 A A E B Q θ 5 Dimensions Unit 1 A b c D D1 E max 4.72 12.83 0.16 20.02 19.96 9.53 nom min 3.43 12.57 0.10 19.61 19.66 9.27

Contextual Info: BLA6G1011-200R; BLA6G1011L S -200RG Power LDMOS transistor Rev. 4 — 9 November 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information

sot979

Contextual Info: Ceramic packages for RF Power Transistors SOT975B L x W x H (mm SOT538A (5.5 x 4.1 x 2.2 (mm) SOT1227A (7.1 x 6.9 x 3.3 (mm) SOT975C (7.1 x 6.9 x 3.3 (mm) (14.0 x 4.1 x 2.9 (mm) SOT1227B SOT467B (9.7 x 5.8 x 4.3 (mm) SOT467C (20.3 x 5.8 x 4.3 (mm)

BB 509 varicap diode

Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Contextual Info: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

BGU7073

Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

Contextual Info: BLA6G1011-200R; BLA6G1011L S -200RG Power LDMOS transistor Rev. 4 — 9 November 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information