SOT323 MARKING CODE 6X Search Results

voltage regulators marking code

Abstract: SOT 86 MARKING E4 ST6206 MARKING CODE E1 sot-323 transistor marking code 15 OUTPUT 3.3V PACKAGE SOT323
Contextual Info: ST6206 Low ESR Low Drop Out Voltage Regulators DESCRIPTION ST6206 family is a positive voltage linear regulators, low power consumption, high votage manufactured with CMOS technology. It provides large currents with a low dropout voltage. ST6206 consists of current limiter circuit, driver transistor, precision

voltage regulators marking code

Abstract: SOT353 e3 SOT-353 e4 sot353 OUTPUT 3.3V PACKAGE SOT323 SP2526 SP2526AS32RG SP2526XS23RG SP2526XS35RG Z A SOT323
Contextual Info: SP2526 Low ESR Cap. Compatible Positive Voltage Regulators DESCRIPTION The SP2526 family is a positive voltage linear regulators, low power consumption, high voltage, manufactured using CMOS technology. The SP2526 family provides large currents with a low dropout

smd schottky diode s6

Abstract: BAS40XY BAS40-4 smd schottky diode s4 1PS75SB45 SOD523 footprint 1PS70SB40 1PS70SB44 1PS76SB40 BAS40
Contextual Info: BAS40 series; 1PSxxSB4x series General-purpose Schottky diodes Rev. 07 — 12 May 2006 Product data sheet 1. Product profile 1.1 General description General-purpose Schottky diodes in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

marking 122 PHILIPS SOD323 SC-76

Abstract: BAS70XY 1PS76SB70 1PS79SB70 BAS70 BAS70-04 BAS70-04W BAS70-05 BAS70-05W BAS70H
Contextual Info: BAS70 series; 1PS7xSB70 series General-purpose Schottky diodes Rev. 08 — 4 May 2006 Product data sheet 1. Product profile 1.1 General description General-purpose Schottky diodes in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview

sod323 reflow

Abstract: SOD523 footprint SOT323 reflow 1PS76SB70 1PS79SB70 BAS70 BAS70-04 BAS70-04W BAS70-05 BAS70-05W
Contextual Info: BAS70 series; 1PS7xSB70 series General-purpose Schottky diodes Rev. 07 — 18 July 2005 Product data sheet 1. Product profile 1.1 General description General-purpose Schottky diodes in small Surface Mounted Device SMD plastic packages. Table 1: Product overview

SOt323 marking code 6X

Abstract: BCR108S BCR108W IEC61000-4-4 marking code INFINEON MARKING CODE 2I ESD1P0RFW
Contextual Info: ESD1P0RF. RF ESD Protection Diodes • ESD / transient protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 20 kV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 10 A (8/20 µs) • Ultra low capacitance of 1 pF typ.

Contextual Info: BAT68. Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications • Pb-free RoHS compliant package BAT68 BAT68-04 BAT68-04W ! BAT68-06 BAT68-06W ! BAT68-07W ! " BAT68-08S $ ! ,  ,   ,  , 

Contextual Info: ESD1P0RF. RF ESD Protection Diodes • ESD / transient protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 20 kV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 10 A (8/20 µs) • Ultra low capacitance of 1 pF typ.

BAS170W

Abstract: BAS70-02L BAS70-02W BAS70-04S MARKING 74s SOt323 marking code 6X MARKING 77s BAS70 Series BAS70 BAS70-04
Contextual Info: BAS70./BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below • Pb-free RoHS compliant package1)

BAS70

Abstract: BAS70-02L BAS70-02W BAS70-04S marking 77s
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below BAS170W BAS70-02L

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

Contextual Info: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration • BAV70S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV70

BAW56S

Abstract: A1s sot23 MARKING CODE SOT23 A1S BAW56 Marking a1s BAW56U BAW56W BCW66 BCW66H SC74
Contextual Info: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration • BAW56S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAW56 BAW56W

bav99 infineon

Abstract: marking A7s A7S MARKING SOT23 BAV99 BAV99 application bav99 Date Code BAV99 soldering free pdf transistor a7s BAV99S BAV99U
Contextual Info: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV99 BAV99W

bav99

Abstract: BAV-99S-E6327 bav99 infineon
Contextual Info: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV99 BAV99W

bav99

Abstract: A7s SOT23 SOT-23 marking A7s
Contextual Info: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV99 BAV99W

marking WGs sot23

Abstract: transistor marking code wgs infineon marking code B1 SOT23
Contextual Info: BCR116. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7 kΩ, R2=47 kΩ • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see

Contextual Info: BCR169. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ • BCR169S: Two internally isolated transistors with good matching in one multichip package • BCR169S: For orientation in reel see

Contextual Info: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2 =47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see

Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package

Contextual Info: BCR116. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7 kΩ, R2=47 kΩ • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see

Contextual Info: BCR119. NPN silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1 =4.7 kΩ • BCR119S: Two internally isolated transistors with good matching in one multichip package • BCR119S: For orientation in reel see