SOT23-6 MARK CODE CB Search Results

829B

Abstract: marking j5a 832B ZC836BTA ON code 829B ZV931 ZC930 MARKING CF sot23 ZC829ATA marking j3a
Contextual Info: 830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise

ON code 829B

Abstract: sot23 mark code CB 829B 832B ZMDC830 ZMV835BTA sot23 mark code AE marking j3a marking j5a ZV931
Contextual Info: 830 SERIES SILICON 25V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low

sot23 mark code CB

Abstract: sot23 mark code AE ZMDC830 marking j5a sod-23 ZMV829 mark B1 sot23 ZC829ATA ZV931 MARK E1 SOT23-5
Contextual Info: 830 series Silicon 25V hyperabrupt varactor diodes ZC829, ZDC833, ZMV829, ZMDC830 and ZV831 Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase

ON Semiconductor 831B

Abstract: sot23 mark code CB MARK BE diode SOD523 ZC829ATA ZV931 829b 832a AA SOD323 design ideas mark A1 SOT23
Contextual Info: 830 series Silicon 25V hyperabrupt varactor diodes ZC829, ZDC833, ZMV829, ZMDC830 and ZV831 Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase

Contextual Info: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector Base Voltage Rating Unit -6 0 -8 0 V V -6 0 -8 0 -4 -5 0 0 350 150 V V V mA mW °C 357 °CW V cB O KST55 KST56 Collector-Emitter Voltage

MARKING W3 SOT23 TRANSISTOR

Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

SOT-23 A8A

Abstract: a8p transistor MARKING A8C SOT-23 a8j digital transistor ROC SOT 23 SOT-23 A8B mark 17 sot-23 hsmc footprint On semiconductor date Code sot-23 SOT-23 A8f
Contextual Info: HI-SINCERITY Spec. No. : HN200302 Issued Date : 2003.03.01 Revised Date : 2005.01.14 Page No. : 1/6 MICROELECTRONICS CORP. HUN2211 / HUN2212 / HUN2213 / HUN2214 / HUN2215 HUN2216 / HUN2230 / HUN2231 / HUN2232 / HUN2233 HUN2234 / HUN2235 / HUN2236 / HUN2237 / HUN2238

A6T TRANSISTOR

Abstract: transistor A6t 15 marking A6t sot-23 transistor A6t A6t SOT-23 sot23 marking A6T A6T SOT-23 MARKING transistor A6t 12 transistor A6p A6t SOT23
Contextual Info: HI-SINCERITY Spec. No. : HN200301 Issued Date : 2003.03.01 Revised Date : 2005.01.14 Page No. : 1/5 MICROELECTRONICS CORP. HUN2111 / HUN2112 / HUN2113 / HUN2114 / HUN2115 HUN2116 / HUN2130 / HUN2131 / HUN2132 / HUN2133 HUN2134 / HUN2136 / HUN2137 / HUN2140

Contextual Info: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector Base Voltage Rating Unit -60 -80 V V T stg -60 -80 -4 -500 350 150 V V V mA mW °C R-m(j-a) 357 °C/W V cB O : KST55 : KST56

BCW65C

Abstract: BSR14 SOT23 NE
Contextual Info: BSR14 BSR14 C E SOT-23 B Mark: U8 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See BCW65C for characteristics. Absolute Maximum Ratings* Symbol

BC807-16

Abstract: BC807-25 BC807-40
Contextual Info: BC807-16 / BC807-25 / BC807-40 BC807-16 BC807-25 BC807-40 C E SOT-23 B Mark: 5A. / 5B. / 5C. PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 1.0 A. Sourced from Process 78. Absolute Maximum Ratings*

CJE SOT-23

Abstract: sot23 mark code e2 FAIRCHILD SOT-23 MARK 30 BCW68G BSR15 On semiconductor date Code sot-23 SOT-23 CEB mark PD sot-23 MARK wc SOT23
Contextual Info: BSR15 BSR15 C E SOT-23 B Mark: T7 PNP General Purpose Amplifier This device is designed for use as general purpose amplifier and switches requiring collector currents to 500 mA. Sourced from Process 63. See BCW68G for characteristics. Absolute Maximum Ratings*

BC817-25

Abstract: BC817-40
Contextual Info: BC817-25 / BC817-40 BC817-25 BC817-40 C E SOT-23 B Mark: 6B. / 6C. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings*

transistor 2N5461

Contextual Info: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

Contextual Info: PN4355 MMBT4355 C E C BE TO-92 B SOT-23 Mark: 81 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings*

transistor j210

Abstract: 212 t sot-23
Contextual Info: G S G S TO-92 SOT-23 D Mark: 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from

MMBF4119

Abstract: PN4117 transistor 61e F63TNR MMBF4117 MMBF4118 PN2222N PN4118 PN4119 CBVK741B019
Contextual Info: MMBF4117 MMBF4118 MMBF4119 PN4117 PN4118 PN4119 G D G S TO-92 SOT-23 D S Mark: 61A / 61C / 61E N-Channel Switch This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance signal

R28 top mark SOT-23

Abstract: SOT MARK R50
Contextual Info: SPX5205 150MA, LOW-NOISE LDO VOLTAGE REGULATOR REV. G JANUARY 30, 2008 Fixed Output Voltage FEATURES • Low Noise Output LDO: 40 VRMS Possible ■ 1% Initial Accuracy ■ Very Low Quiecent Current: 70μA ■ Low Dropout Voltage 210mV at 150mA ■ Current and Thermal Limiting

R50 SOT23

Contextual Info: SPX5205 150MA, LOW-NOISE LDO VOLTAGE REGULATOR NOVEMBER 21, 2007 REV. F Fixed Output Voltage FEATURES • Low Noise Output LDO: 40 VRMS Possible ■ 1% Initial Accuracy ■ Very Low Quiecent Current: 70μA ■ Low Dropout Voltage 210mV at 150mA ■ Current and Thermal Limiting

transistor 2N5461

Abstract: 2n5462 2N5460 CONFIGURATION 2N5461 2N5461 CBVK741B019 F63TNR MMBF5460 MMBF5461 PN2222N
Contextual Info: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

WC SOT23-3

Abstract: 6C t marking code sot 23 SOT-23 6C 6B SOT23-3 FAIRCHILD SOT-23 MARK 30 sot23 mark code e2
Contextual Info: BC817-25 / BC817-40 BC817-25 BC817-40 C E SOT-23 B Mark: 6B. / 6C. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings*

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856ALT1 Series MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V VEBO –5.0 V

BCW71

Abstract: On semiconductor date Code
Contextual Info: BCW71 BCW71 C E SOT-23 B Mark: K1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPSA65

Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*