SOT23-6, COMPLEMENTARY TRANSISTORS Search Results

complementary npn-pnp

Abstract: dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748
Contextual Info: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES

transistor pnp VCEO 12V Ic 1A

Abstract: ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak
Contextual Info: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1.5A; PNP: VCEO=-12V; VCE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very

BC848 equivalent

Abstract: bc847 X10-4 BC849C-2C spice bc847 BC846B BC847A BC847C BC848A BC848C
Contextual Info: SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC846 BC848 BC850 ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS BC847 BC849 COMPLEMENTARY TYPES BC846A–Z1A BC848B–1K BC846 BC856 BC846B–1B BC848C–Z1L BC847 BC857 BC847A–Z1E BC849B–2B BC848 BC858 BC847B–1F

BC857

Abstract: BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BC859A
Contextual Info: SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC856 BC858 BC860 ISSUE 6 - APRIL 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC856A–3A BC856 BC858C–3L BC846 BC856B–Z3B BC859A–Z4A BC857 BC847 BC857A–Z3E BC859B–4B BC858 BC848 BC857B–3F BC859C–Z4C

BC850 SOT23

Contextual Info: BC847 BC849 BC846 BC848 BC850 SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC846A-Z1A BC848B-1K BC846 BC856 BC846B-1B BC848C-Z1L BC847 BC857 BC847A-Z1E BC849B-2B BC848 BC858 BC847B-1F BC849C-2C

DIODES 11W

Contextual Info: A Product Line of Diodes Incorporated ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve

Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4-iune 1996_ O_ PARTMARKING DETAILS BC817 -6 D Z BC817-16 - 6AZ B C 817-25-6B Z BC818 -6 H Z BC817-40-6C Z BC818-40-6G Z B C 818-16-6EZ B C 818-25-6FZ COMPLEMENTARY TYPES BC817

TS16949

Abstract: ZXTC2063E6 ZXTC2063E6TA SOT23-6 MARKING 57 NPN SOT23-6
Contextual Info: ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP

complementary npn-pnp power transistors

Abstract: ZETEX medium power complementary transistors TS16949 ZXTC2061E6 ZXTC2061E6TA NPN SOT23-6 RCE SOT23-6
Contextual Info: ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 35 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.

complementary npn-pnp power transistors

Abstract: sot23 npn-pnp SOT23-6, complementary medium power transistors SOT23-6, complementary transistors
Contextual Info: A Product Line of Diodes Incorporated ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 40 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to

ZXTC2062E6

Abstract: TS16949 ZXTC2062E6TA E2 SOT23 complementary npn-pnp power transistors NPN SOT23-6 sot23 npn-pnp
Contextual Info: ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.

3554M

Contextual Info: A Product Line of Diodes Incorporated ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to

2GM sot-23 transistor

Abstract: marking code 1AM 2N3904 SOT-23 MARKING CODE bc857 to92 TRANSISTOR 1g sot23 npn pin configuration NPN transistor BC817 sot-23 TS560 1aM sot-23 transistor bc848 to 92 BC848 e BC818
Contextual Info: BC807, BC808 Small Signal Transistors PNP FEATURES ♦ PNP Silicon Epitaxial Planar Transistors SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) Top View ♦ Especially suited for automatic insertion .056 (1.43) .052 (1.33) 3 in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,

FMMTA93

Abstract: FMMTA93R FMMTA42 FMMTA43 FMMTA92 FMMTA92R DSA003704
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS FMMTA92 FMMTA93 ISSUE 3 - JANUARY 1996 PARTMARKING DETAILS: Static Forward Current Transfer Ratio TYPICAL CHARACTERISTICS f Transition Frequency MHz 60 V+-=10V 50 40 0.1 10 1.0 100 130 110 90 SOT23 PARAMETER

SMD M1A

Abstract: marking g3p marking L2 SOT23 6 m1a smd smd marking code m1a L2 SOT23 BF660 smd transistors smd code marking sot23 smd transistors code
Contextual Info: High Frequency SMD Transistors High Frequency SMD® Transistors Description Mechanical Data Philips Components high-frequency transistors fill the gap between general purpose transistors and wideband transistors by offering transition frequencies from a few hun­

complementary MOSFET TO252

Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
Contextual Info: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and

EIAJ-SC74

Abstract: ultra low noise NPN transistor NPN pnp MATCHED PAIRS sot23 Bipolar NPN Transistor Low Noise uhf transistor HFA3135 vhf high gain transistor Matched pair transistors
Contextual Info: HFA3134, HFA3135 Semiconductor F e b r u a r y 19 98 D a ta S h e e t F ile N u m b e r 4445 Features Ultra High Frequency Matched Pair Transistors • The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Harris Semiconductor's complementary bipolar UHF-1X process.

marking PA SOT23-6

Abstract: T1 MARKING SOT23-6 Marking f1 SOT23-6 sot23-6 package marking PA NCS2201 NCS2200SN1T1 NCS2200SN2T1 NCS2201SN2T1 NCS2202SN1T1 SC59
Contextual Info: NCS2200 Series Low Voltage Comparators The NCS2200 Series is an industry first sub−one volt, low power comparator family. These devices consume only 10 mA of supply current. They are guaranteed to operate at a low voltage of 0.85 V which allows them to be used in systems that require less than 1.0 V

marking PA SOT23-6

Abstract: Marking f1 SOT23-6 T1 MARKING SOT23-6 sot23-6 package marking PA SOT23-6 MARKING pa NCS2302 MARKING T1 SOT23-6 NCS2303SN2T1 marking 515 sot23-6 sot23-6 pa
Contextual Info: NCS2300 Series Advance Information Low Power Comparators The NCS2300 Series is an ultra−low power comparator family. These devices consume only 11 mA of supply current. They operate at a wide voltage range of 1.7 V to 12 V. Additional features include no

DMG1012

Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
Contextual Info: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS

h12e

Abstract: BCW60DR CR SOT23 power 22E mark B1 sot23 BCW60 BCW60A BCW60AR BCW60B BCW60BR
Contextual Info: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW60 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES 20 20

marking PA SOT23-6

Abstract: NCS2200 NCS2200SN1T1 NCS2200SN2T1 NCS2201SN1T1 NCS2201SN2T1 NCS2202SN1T1 NCS2202SN2T1 SC59 marking mv sot23 n channel mosfet
Contextual Info: NCS2200 Series Low Voltage Comparators The NCS2200 Series is an industry first sub–one volt, low power comparator family. These devices consume only 10 mA of supply current. They are guaranteed to operate at a low voltage of 0.85 V which allows them to be used in systems that require less than 1.0 V

BFR53

Abstract: marking codes transistors sot-223
Contextual Info: BROADBAND SM D TRANSISTORS DESCRIPTION • Philips Components broadband transistors are the result of leading-edge technology dedicated to expanding performance and selection in the wideband arena. The devices are ideal amplifiers for VHF, UHF, and microwave

Contextual Info: MMBTA92LT1 / MMBTA93LT1 PNP Silicon High Voltage Transistors for high voltage switching and amplifier applications. As complementary types the NPN transistors MMBTA42LT1 and MMBTA43LT1 are recommended. SOT-23 Plastic Package SOT-23 Plastic Package SOT-23 Plastic Package