SOT23-5 MARKING MOSFET Search Results

VM MARKING CODE SOT23-5

Abstract: NET50 NET153
Contextual Info: sig n TSM105 • ■ ■ ■ ORDER CODE Part Number Package Temperature Range TSM105CLT TSM105CD Marking L D • 0 to 85°C 0 to 85°C • M105 TSM105 L = Tiny Package SOT23-5 - only available in Tape & Reel (LT) D = Small Outline Package (SO) - also available in Tape & Reel (DT)

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

k72 sot-23

Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
Contextual Info: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS

s72 sot 23

Abstract: transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 2n7002 transistor s72 S72 Transistor
Contextual Info: N & P CHANNEL MOSFETS ENHANCEMENT MODE N CHANNEL SOT-23 Cont. D-S Drain Voltage Current Type Marking V max A max BS870 S70 60 0.25 2N7002 S72 60 0.25 *: Pulse test width 80µs, 1% duty factor. Pwr. Dispn. TC=25˚C W max 0.31 0.31 Gate Thr. Volt. VGS=VDS ID=ImA

Contextual Info: Comchip MOSFET SMD Diode Specialist CJ3401-HF P-Channel Reverse Voltage: - 30 Volts Forward Current: - 4.2 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -P-Channel -High dense cell design for extremely low RDS(ON) 3 -Exceptional on-resistance and miximum DC current

smd diode marking Ja sot

Contextual Info: Comchip MOSFET SMD Diode Specialist CJ3404-HF N-Channel Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -N-Channel -Enhancement mode field effect transistor. -Use advanced trench technology to provide

device marking code sot23-5 mosfet

Contextual Info: Comchip MOSFET SMD Diode Specialist CJ3401-HF P-Channel Reverse Voltage: - 30 Volts Forward Current: - 4.2 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -P-Channel -High dense cell design for extremely low RDS(ON) 3 -Exceptional on-resistance and miximum DC current

MOSFET TRANSISTOR SMD MARKING CODE

Abstract: MOSFET marking smd
Contextual Info: Comchip MOSFET SMD Diode Specialist CJ3404-HF N-Channel Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -N-Channel -Enhancement mode field effect transistor. -Use advanced trench technology to provide

Contextual Info: MOSFET BSS138-G N-Channel 50-V D-S MOSFET RoHS Device Features SOT-23 1 : Gate 2 : Source 3 : Drain -High density cell design for extremely low RDS(ON). -Rugged and Reliable. 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Mechanical data 1 -Case: SOT-23, molded plastic.

Contextual Info: Product specification DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: Product specification DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

MOSFET P channel SOT-23

Abstract: 20A SOT-23 SOT-23 MARKING 20A 01DA MOSFET P-Channel sot-23 ST2301DS ST2301D 20A p MOSFET MARKING TR SOT23-3 P MOSFET mosfet low vgs sot-23
Contextual Info: ST2301D P Channel Enhancement Mode MOSFET -2.0A DESCRIPTION The ST2301D is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

marking 31A sot-23

Abstract: SOT-23 MARKING 20A sot-23 MOSFET Marking code 6A ST2302D Power MOSFET N-Channel sot-23 N mosfet sot-23 MOSFET N SOT-23 MARKING CODE 16 transistor sot23 sot23 marking 6A diode sot-23 MARKING CODE NC
Contextual Info: ST2302D N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION The ST2302D is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

BSS127S

Abstract: K29 mosfet BSS127 K28 SOT23
Contextual Info: BSS127 Green N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C 600V 160Ω @ VGS = 10V SC59 SOT23 70mA • • • • • Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage

DIODES K29

Contextual Info: BSS127 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C • Low Input Capacitance High BVDss rating for power application 600V 160Ω @ VGS = 10V SC59 SOT23 • 70mA • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

payi

Abstract: TPS1110
Contextual Info: TPS2816, TPS2817, TPS2818, TPS2819, TPS2828, TPS2829, SINGLEĆCHANNEL HIGHĆSPEED MOSFET DRIVER SLVS160C – FEBRUARY 1997 – REVISED OCTOBER 2002 D Low-Cost Single-Channel High-Speed D D D D D D D TPS2816, TPS2817 TPS2818, TPS2819 DBV PACKAGE TOP VIEW

Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it

Contextual Info: ST2300SRG N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it

Contextual Info: Product specification DMG3420U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary 20V • Low On-Resistance RDS ON max ID max TA = +25°C • Low Input Capacitance • Fast Switching Speed 21mΩ @ VGS = 10V 6.5A • Low Input/Output Leakage 25mΩ @ VGS = 4.5V

Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it

Contextual Info: Product specification DMP3160L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25°C • Low On-Resistance  Low Gate Threshold Voltage 122m @ VGS = -10V -2.7A  Low Input Capacitance 190m @ VGS = -4.5V -2.0A  Fast Switching Speed