SOT23-3L JEDEC STANDARD Search Results

spx2431l

Abstract: SP730EK-4-375 SPX1432AM SPX1432M SPX2431AM SPX2431AM-L SPX2431LAM SPX2431LM SPX2431M SPX2431M-L
Contextual Info: CCN – Customer Change Notification PRODUCT CHANGE NOTICE CCN No.: 04-1222-1 PART NUMBER: See attached Sipex Part Number list REVISION: SOT23-3L packaged products may vary from JEDEC TO-236 Variation AB. PART DESCRIPTION: (See Applicable Datasheets) DATE: December 22, 2004

SOT-23 2N4403

Abstract: 2N4403
Contextual Info: 2N4403 / MMBT4403 PNP General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA. C E TO-92 SOT-23 EBC Mark:2T Figure 1. 2N4403 Device Package B Figure 2. MMBT4403 Device Package

Contextual Info: SS2509 Hall Latch - High Sensitivity Packages Features and Benefits – 3 pin SOT23 suffix SO – – – – – – – – 3 pin SIP (suffix UA) Functional Block Diagram Application Examples – – – – – – – VDD Voltage Regulator Rpull Wide operating voltage range from 3.5V to

Contextual Info: SS559 Hall Latch - High Sensitivity Packages Features and Benefits – 3 pin SOT23 suffix SO – – – – – – – – 3 pin SIP (suffix UA) Functional Block Diagram Application Examples VDD Voltage Regulator Wide operating voltage range from 2.5V to

Contextual Info: SS2712 Hall Latch - High Sensitivity Features and Benefits – – – – – – – Application Examples – – – – – – – Wide operating voltage range from 2.5V to 24V High magnetic sensitivity – Multi-purpose CMOS technology Chopper-stabilized amplifier stage

Contextual Info: SS732 Hall Latch - High Sensitivity Features and Benefits – – – – – – – Application Examples – – – – – – – Wide operating voltage range from 3.5V to 24V High magnetic sensitivity – Multi-purpose CMOS technology Chopper-stabilized amplifier stage

Contextual Info: PN2907A / MMBT2907A / PZT2907A 60 V PNP General-Purpose Transistor Description Features The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a generalHigh-Current Gain Bandwidth Product fT : purpose amplifier or switch in applications that require

Contextual Info: SS2413 Hall Latch - High Sensitivity Features and Benefits Application Examples – – – – – – – – – – – Wide operating voltage range from 2.5V to 24V High magnetic sensitivity – Multi-purpose CMOS technology Chopper-stabilized amplifier stage

2n5551

Abstract: 2N5551 SOT23
Contextual Info: 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO-92 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Ordering Information 1

Contextual Info: SS569 Hall Latch - High Sensitivity Packages Features and Benefits – 3 pin SOT23 suffix SO – – – – – – – – 3 pin SIP (suffix UA) Functional Block Diagram Application Examples – – – – – – – VDD Voltage Regulator Rpull Wide operating voltage range from 3.5V to

MMBT3906

Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A

LB713

Abstract: marking 255 SC-70 RESET20 TRANSISTOR NB TCM809 TCM810 TCM809L transistor sc 308 sc70 marking 3L
Contextual Info: TCM809/TCM810 3-Pin Microcontroller Reset Monitors Features General Description • Precision VDD Monitor for 2.5V, 3.0V, 3.3V, 5.0V Nominal System Voltage Supplies • 140 msec Minimum RESET Time-Out Period • RESET Output to VDD = 1.0V TCM809 • Low Supply Current, 9 µA (typ.)

Contextual Info: BAV99 200 mA 70 V High Conductance Ultra-Fast Switching Diode Features Description • • • • The BAV99 is a 350 mW high-speed switching diode array with series-pair diode configuration. It achieves high-current conductivity, up to 200 mA, in a very small

pn2907

Contextual Info: PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63. MMBT2907 PN2907 C E TO-92 SOT-23 Mark:2B EBC B Ordering Information

DIODE marking Sl

Abstract: SL15.TCt
Contextual Info: SL05 through SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient

transistor c-111

Abstract: TRANSISTOR 111
Contextual Info: PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor Description Features The PN2907A, MMBT2907A, and PZT2907A are 60 V -PNP bipolar transistors designed for use as a genHigh-Current Gain Bandwidth Product fT : eral-purpose amplifier or switch in applications that

Contextual Info: Semiconductor, Inc. TC54 Series VOLTAGE DETECTOR FEATURES GENERAL DESCRIPTION • The TC54 Series are CMOS voltage detectors, suited especially for battery-powered applications because of their extremely low 1jaA operating current and small surfacemount packaging. Each part is laser trimmed to the desired

transistor SOT-23 marking code J6

Abstract: TCM809 TCM810 transistor sc-70 marking codes A1 vNB
Contextual Info: TCM809/TCM810 3-Pin Microcontroller Reset Monitors Features General Description • Precision VDD Monitor for 2.5V, 3.0V, 3.3V, 5.0V Nominal System Voltage Supplies • 140 msec Minimum RESET Time-Out Period • RESET Output to VDD = 1.0V TCM809 • Low Supply Current, 9 µA (typ.)

Contextual Info: FJV4102R PNP Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R1 = 10 kΩ, R2 = 10 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.

Contextual Info: FJV3110R NPN Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R = 10 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.

Contextual Info: FJV4101R PNP Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R1 = 4.7 kΩ, R2 = 4.7 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.

Contextual Info: FJV3115R NPN Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R1 = 2.2 kΩ, R2 = 10 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.

Contextual Info: FJV3105R NPN Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R1 = 4.7 kΩ, R2 = 10 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.

Contextual Info: MMBT3646 NPN Switching Transistor Features 3 • NPN High Speed Switching Transistor • Process 22 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method MMBT3646 23 SOT-23 3L Tape and Reel Absolute Maximum Ratings