SOT23-3 BSS84 Search Results

Contextual Info: • bbS3131 □0236'ia 343 H A P X Philips Sem iconductors Data sheet status Product specification date of issue July 1993 0 g 3 3 4 N AMER PHILIPS/DISCRETE P-channel enhancement mode vertical D-MOS FET PINNING - SOT23 D ESCRIPTIO N Silicon p-channel enhancement

BSS84AK

Abstract: BSS84AK/DG/B2215
Contextual Info: SO T2 3 BSS84AK 50 V, 180 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

NXP SMD mosfet MARKING CODE

Abstract: Silicon P-Channel Junction FET sot23 1140mw NXP TRANSISTOR SMD MARKING CODE SOT23 transistor replacement
Contextual Info: SO T2 3 BSS84AK 50 V, 180 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: SO T2 3 BSS84AK 50 V, 180 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

bss170

Contextual Info: SOT23 'If SMALL SIGNAL MOSFETS SOTFETs Pinout : 1-Drain, 2-Source, 3-Gate Type b mA BV qss V !DM A PD mW V GE;<th) M in/M ax at lD V mA RDS(on) a at Max mA to V GS V 10 N-CHANNEl ZVN3320F 200 60 1.0 330 1.0/3.0 1.0 25.0 100 BSS123 100 170 0.68 360 0.8/2.8

bss170

Abstract: BSS170F MJ174
Contextual Info: SOT23 SM ALL SIGNAL M O SFETS SO TFETs '• Pinout : 1-Drain, 2-Source, 3-Gate Type BV q s s V !d mA !dm A PD mW R DS(on) VGS><th) Min/Max at lD mA V £2 at Max •d mA V GS V 10 N-CHANNEL; ZVN3320F 200 60 1.0 330 1.0/3.0 1.0 25.0 100 BSS123 100 170 0.68

BSS110

Abstract: BSS84
Contextual Info: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Diode U160

Contextual Info: MOTOROLA Order this document by BSS84LT1/D SEMICONDUCTOR TECHNICAL DATA L i n e Green BSS84LT1 Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Motorola Preferred Device P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET 3 DRAIN CASE 318-08, Style 21

BSS110

Abstract: BSS84 CBVK741B019 F63TNR PN2222N
Contextual Info: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it

Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

BSS84Q-7-F

Abstract: BSS84 Equivalent K84 SOT23 BSS84Q BSS84Q-13-F BSS84
Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

DS30149

Abstract: BSS84 BSS84 Equivalent BSS84Q-7-F BSS84 MARKING CODE
Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it

Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it

p-channel SOT-23 K84

Abstract: transistor k84 k84 transistor sot-23 BSS84 marking code SOT-23
Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits • • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance

TRANSISTOR SMD MARKING CODE SP

Abstract: smd "code rc" transistor marking code sp TRANSISTOR SMD MARKING CODE X D transistor SMD 520 BSS84 transistor SMD MARKING CODE marking code br SMD transistor marking code SS SOT23 transistor smd transistor 24 sot23
Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS84 PINNING - SOT23 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. PIN SYMBOL

BSS84

Abstract: p-channel SOT-23 K84
Contextual Info: BSS84 Lead-free P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • Mechanical Data • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: BSS84 Lead-free P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Mechanical Data • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage

BSS84-7-F

Abstract: p-channel SOT-23 K84 BSS84 MARKING CODE bss84 spice marking code 27a BSS84 BSS84 marking code SOT-23 transistor k84
Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Mechanical Data • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance

BSS84 P

Abstract: BSS84 GSOT-23
Contextual Info: BSS84 P-channel enhancement mode vertical D-MOS transistor Rev. 04 — 17 July 2007 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical D-MOS transistor in a SOT23 Surface-Mount Device SMD package. 1.2 Features

bss84

Abstract: TRANSISTOR SMD MARKING CODE A1 marking code DG SMD Transistor BSS84.215
Contextual Info: BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 06 — 16 December 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor DMOS transistor in a small Surface-Mounted Device (SMD) plastic package.

BSS84 MARKING CODE

Abstract: TRANSISTOR SMD CODE PACKAGE SOT23 NXP SMD TRANSISTOR MARKING CODE smd code marking WV TRANSISTOR SMD MARKING CODES TRANSISTOR SMD MARKING CODE A1 marking code DG SMD Transistor BSS84 Equivalent BSS84 marking code e1 smd
Contextual Info: BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 05 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor DMOS transistor in a small Surface-Mounted Device (SMD) plastic package.

BSS84

Abstract: BSS84 nxp TRANSISTOR SMD MARKING CODES BSS84 marking marking code DG SMD Transistor bss84 e-6327
Contextual Info: BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 06 — 16 December 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor DMOS transistor in a small Surface-Mounted Device (SMD) plastic package.