SOT223 L5 Search Results

BFG35

Abstract: TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570
Contextual Info: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.

Philips 2222 050 capacitor

Contextual Info: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated

BFG135 power amplifier for 900Mhz

Abstract: BFG135 amplifier BFG135 A amplifier bfg135 BFG135 TRANSISTOR MBB300 BFG135 - BFG135 microstripline npn 2222 transistor power amplifier specifications at 900Mhz
Contextual Info: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated

BFG35 amplifier

Contextual Info: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,

bfg97

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223

BFG97

Abstract: BFG31 TRANSISTOR BFg97 sc7313
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended

bfg135 application note

Abstract: bfg135 bfg135sot223 BFG135 amplifier TRANSISTOR GENERAL DIGITAL L6 BFG135,115
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,

MSA035

Abstract: BFQ246 MSB002
Contextual Info: Philips Semiconductors Preliminary specification PNP video transistor BFQ246 APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package.

BFG135 amplifier

Abstract: SC7313 BFG135 bfg135 application note MBB298
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,

npn 2222 transistor

Abstract: BFG198 MS80 din 45325 2222 TRANSISTOR NPN Philips 2222 114 capacitor 2222 851
Contextual Info: Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.

BFG198

Abstract: microstripline
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended

transistor D 5032

Abstract: 5032 transistor philips FP 9600 2222 372 d 5032 transistor APX 2600 TRANSISTOR PHL 0284 2222 379 2322 731 D0246
Contextual Info: bbS 3 q 31 Philips Semiconductors ODEMflga 335 W A P X Product specification NPN 4 GHz wideband transistor M ANER DESCRIPTION ^ PHILIPS/DISCRETE L7E BFG35 D _ PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. Intended for wideband

Contextual Info: bb53^31 Philips Semiconductors QQgMflgg 335 WAPX Product specification NPN 4 GHz wideband transistor ^ BFG35 M APIER PHILIPS/DISCRETE b7E D DESCRIPTION PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features

D 823 transistor

Abstract: transistor PH ON 823 m
Contextual Info: Philips Semiconductors • bbSBTBl QDHimD bbfi H A P X Product specification N AUER PHILIPS/D ISCR ETE b?E D NPN 5 GHz wideband transistor DESCRIPTION NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage

Contextual Info: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband

MB87S

Contextual Info: • bbS3R31 0 0 2 ^ 5 b 7bS « A P X “ N AUER PHILIPS/DISCRETE b7E D NPN 8 GHz wideband transistor DKT c ^ Philips Semiconductors DESCRIPTION Product specification BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications.

r1601

Abstract: SOT223 MARKING L5 thn6601b
Contextual Info: Specification THN6601B NPN SiGe RF TRANSISTOR Unit in mm SOT223 □ Applications 6.5 - UHF and VHF wide band amplifier 3.0 4 - High gain bandwidth product 7.0 3.5 □ Features fT = 7 GHz - High power gain 1 |S21|2 = 7 dB @ VCE = 5 V, IC = 100 mA, f = 1 GHz

NT 407 F TRANSISTOR

Abstract: Philips CD 303 2222 595 npn 2222 transistor BFG198 MS8002 0450 7N 2222 443 TRANSISTOR D 471 MRA transistor
Contextual Info: Philips Sem iconductors • N bbS3R31 AMER 0024SSb 7bS H IA P X P H IL IP S /D IS C R E T E b7E Product specification D NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband simplifier applications.

xl 1225 transistor

Abstract: BFG135 amplifier transistor B 1184 BFG135 bfg135 scattering transistor d 1557 603-30-1 BFG135 A amplifier 2222 379 UBB300
Contextual Info: nu. e „ • Philips Semiconductors 1— 1 b 1353131 0024123 21b ■ APX AMER PH IL IP S/D IS CR ET E Product specification L7E D NPN 7 GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband

philips resistor 2322 763

Abstract: bfg97 scattering BFG97 D 1413 transistor BFG31 UBB774 PH ON 823 TRANSISTOR BFg97 24C1S
Contextual Info: Philips Sem iconductors — — — • bba oosmtid mapx Product specification N AMER P H I L I P S / D I S C R E T E ti7E D NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage

l5150

Abstract: L5150BN
Contextual Info: L5150BN 5 V low dropout voltage regulator Features  Max DC supply voltage VS 40 V Max output voltage tolerance ΔVo ±2% Max dropout voltage Vdp 500 mV Output current I0 150 mA Quiescent current Iq 50 µA 1 '!0'03 SOT-223 1. Typical value. Description

Contextual Info: L5150BN 5 V low dropout voltage regulator Features  Max DC supply voltage VS 40 V Max output voltage tolerance Vo ±2% Max dropout voltage Vdp 500 mV Output current I0 150 mA Quiescent current Iq 50 µA 1 '!0'03 SOT-223 1. Typical value. Description