SOT121B PACKAGE Search Results

marking code C9

Abstract: BLF246 transistor 097
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D060 BLF246 VHF power MOS transistor Product specification Supersedes data of 1996 Oct 21 2003 Aug 05 Philips Semiconductors Product specification VHF power MOS transistor BLF246 PINNING - SOT121B FEATURES • High power gain

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D060 BLF246 VHF power MOS transistor Product specification Supersedes data of 1996 Oct 21 2003 Aug 05 Philips Semiconductors Product specification VHF power MOS transistor BLF246 PINNING - SOT121B FEATURES • High power gain

xl 1225 transistor

Abstract: BLF147 SOT121 SOT121B M1501200
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D060 BLF147 VHF power MOS transistor Product specification Supersedes data of 2001 May 23 2003 Sep 01 Philips Semiconductors Product specification VHF power MOS transistor BLF147 PINNING - SOT121B FEATURES • High power gain

Contextual Info: SOT121B CRFM4; blister pack packing method; standard product orientation 12NC ending 112 Rev. 1 — 1 October 2012 Packing information 1. Packing method Blister cover ESD Label Foam Blister bottom ESD Label Printed plano box Space for additional label Preprinted ESD warning

Contextual Info: iJ-*ioaucti, Line, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. VHP power MOS transistor BLF246 FEATURES PINNING-SOT121B • High power gain PIN • Low noise figure 1 drain • Easy power control

Contextual Info: Package outline Flanged ceramic package; 2 mounting holes; 4 leads SOT121B D A F D1 q C B U1 c H b 4 α w2 M C M 3 A U3 U2 p w1 M A M B M 1 2 H Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b c mm 7.27

SOT121B

Abstract: sot121B package q 1257 q 391
Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged ceramic package; 2 mounting holes; 4 leads SOT121B D A F D1 q C B U1 c H b 4 α w2 M C M 3 A U3 U2 p w1 M A M B M 1 2 H Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions

VDMOS

Abstract: BLF574 BLF647 BLF878 220v to 12v inverters circuit diagrams BLF278 NXP blf368 BLF861 blf246b sot121B package
Contextual Info: Broadcast and ISM product portfolio Product type Package UHF 470-860 MHz BLF878 SOT979A BLF878 SOT979A BLF871 SOT467C BLF871 SOT467C BLF861A SOT540A General purpose < 2 GHz BLF647 SOT540A BLF2045 SOT467C BLF1822-10 SOT467C BLF1043 SOT538A BLF871 SOT467C

SOT467C

Abstract: BLF578 dvb_t BLF571 blf574 BLF645 BLF881 BLF573 BLF888A DVB-T
Contextual Info: RF Power Broadcast and ISM product portfolio 2010 Function Type Package frange PL AV D Gp @VDS MHz W % dB V 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1300 0 - 1300 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 100

transistors cross reference list

Abstract: MOTOROLA circuit for mrf150 CLASS AB mrf151g 300 MRF166W BLF246 MRF140 blf404 MRF177 Motorola transistors MRF158
Contextual Info: PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Philips Type UHF Motorola Type BLF548 MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 MRF166C BLF542 MRF160 BLF404 BLF521 MRF158 VHF

BLW96

Contextual Info: ].£.I±£.L ^zml-t-onauckoi iJ^iodueti, Line. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,

BLW96

Abstract: PR37 RESISTOR RESISTOR pr37 MGP700 BLW96 HF power amplifier SOT121B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW96 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,

BLW78

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 HF/VHF power transistor BLW78 It has a 1/2" flange envelope with a ceramic cap. All leads are isolated from the flange. DESCRIPTION N-P-N silicon planar epitaxial

Philips polystyrene capacitors

Abstract: capacitor polyester philips HF power amplifier MGP502 push pull class AB RF linear MGP501 Philips polystyrene capacitor BLW76 class A push pull power amplifier transistor w 04 59
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB

4312 020 36640

Abstract: SOT121B SOT121 BLW97 PHILIPS 4312 amplifier TRANSISTOR blw97 3 pin TRIMMER capacitor 3 pin trimmer capacitors
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification August 1986 Philips Semiconductors Product specification HF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power

Contextual Info: DISCRETE SEMICONDUCTORS DAT BLW96 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power

PR37

Abstract: PR37 RESISTOR BLW96 philips blw96 BLW96 HF power amplifier PHILIPS 4312 amplifier trimmer 3-30 pf amplifier blw96 MGP700 727 Transistor power values
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW96 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power

MRF140

Abstract: mrf151g 300 blf245 MRF174 "cross-reference" motorola MRF150 04 150 MRF150 MRF157 SOT123 BLF546
Contextual Info: Version 1.0 Date: 2002-08-01 PHILIPS VDMOS Cross-Reference List UHF Philips Type VDMOS BLF548 Motorola Type TMOS MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 BLF542 MRF160 BLF404 BLF521 MRF158 BLF368 MRF141G BLF278 Motorola Philips

BD443

Abstract: MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power

BY206

Abstract: BLW78 1206 resistor MGP560 mica trimmer capacitor polyester capacitor BR 8 TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW78 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor BLW78 It has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange.

BLF177

Abstract: 8830 transistor transistor marking code HF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D060 BLF177 HF/VHF power MOS transistor Product specification Supersedes data of 2003 Jul 21 2004 Dec 17 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION • High power gain

BLF177

Abstract: mexico Ceramic capacitor 105 MBK-408
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D060 BLF177 HF/VHF power MOS transistor Product specification Supersedes data of September 1992 1998 Jul 02 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION • High power gain

BD443

Abstract: BLW76 BD228 philips polystyrene capacitor MGP501
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power

BLF147

Abstract: data sheet for BLF147
Contextual Info: BLF147 VHF power MOS transistor Rev. 06 — 5 December 2006 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact