SOT-363 MARKING Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMX18N SOT-363 General purpose transistors dual transistors FEATURES z Two 2SC5585 chips in a package. z Mounting possible with SOT-363 automatic mounting machines.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMB3N SOT-363 General purpose transistors dual transistors FEATURES z Two DTA143T chips in a package z Mounting possible with SOT-363 automatic mounting machines.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMF5N SOT-363 General purpose transistors dual transistors FEATURES z 2SA2018 and DTC144E are housed independently in a package. z Mounting possible with SOT-363 automatic mounting machines.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate transistors UMD5N General purpose transistors dual digital transistors SOT-363 FEATURES z Both the DTA143X chip and DTC144E chip in a package z Mounting possible with SOT-363 automatic mounting machines

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMD2N SOT-363 General purpose transistors dual transistors FEATURES z Both the DTA124E chip and DTC124E chip in a package z Mounting possible with SOT-363 automatic mounting machines.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMH11N General purpose transistors dual transistors SOT-363 FEATURES z Two DTC114E chip in a package z Mounting possible with SOT-363 automatic mounting machines z Transistor elements are independent, eliminating interference

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002DW SOT-363 SOT-363 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002DW SOT-363 SOT-363 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

DCX114YU

Abstract: sot 363 marking c14 DCX143TU DCX144EU J-STD-020A 22KW DCX114EU DCX114TU DCX123JU DCX124EU
Contextual Info: DCX xxxx U COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · Epitaxial Planar Die Construction Built-In Biasing Resistors CXX YM Mechanical Data · · · · · · · · SOT-363 A Case: SOT-363, Molded Plastic

2SC5343

Abstract: SUT486J kst60
Contextual Info: SUT486J Semiconductor Epitaxial Planar type NPN Silicon Transistor Description • General purpose transistor Feature • Two 2SC5343 chips in SOT-363 package Ordering Information Type NO. Marking SUT486J Package Code 6X SOT-363 Outline Dimensions unit : mm

2SC5343

Abstract: SUT495J kst60
Contextual Info: SUT495J Semiconductor Epitaxial Planar type NPN Silicon Transistor Description • General purpose transistor Feature • Two 2SC5343 chips in SOT-363 package Ordering Information Type NO. Marking SUT495J Package Code FX SOT-363 Outline Dimensions unit : mm

kst60

Abstract: 2SA1980 SUT488J KST-6006-002
Contextual Info: SUT488J Semiconductor Epitaxial Planar Type PNP Silicon Transistor Description • General purpose transistor Feature • Two 2SA1980 chips in SOT-363 package Ordering Information Type NO. Marking SUT488J Package Code 8X SOT-363 Outline Dimensions unit : mm

kst60

Abstract: 2SA1980 SUT487J
Contextual Info: SUT487J Semiconductor Epitaxial Planar Type PNP Silicon Transistor Description • General purpose transistor Feature • Two 2SA1980 chips in SOT-363 package Ordering Information Type NO. Marking SUT487J Package Code XX SOT-363 Outline Dimensions unit : mm

BAS16TW

Abstract: MMBD4148TW marking KA2 sot 363
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes BAS16TW/MMBD4148TW SOT-363 SWITCHING DIODES FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance MARKING: BAS16TW KA2• MMBD4148TW KA2

SRC1207

Abstract: SUR543J kst60
Contextual Info: SUR543J Semiconductor Epitaxial Planar Type NPN Silicon Transistor Description • Digital transistor Features • Two SRC1207 chips in SOT-363 package • With built-in bias resistors Ordering Information Type NO. Marking SUR543J Package Code HSH SOT-363

kst60

Abstract: 2SA1980 2SC5343 SUT483J
Contextual Info: SUT483J Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Description • General purpose transistor Feature • Both 2SA1980 chip and 2SC5343 chip in SOT-363 package Ordering Information Type NO. Marking SUT483J Package Code 3X SOT-363 Outline Dimensions

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT3906 SOT-363 DUAL TRANSISTOR PNP FEATURES •Epitaxial planar die construction ·Ideal for low power amplification and switching 1 MARKING:K3N MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)

marking 20 ESD

Abstract: CESD5V0K5
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 CESD5V0K5 Plastic-Encapsulate Diodes ESD Protection Diodes SOT-363 DESCRIPTION The CESD5V0K5 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,

SOT-363 marking 05

Abstract: MMDT3904
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT3904 DUAL TRANSISTOR（NPN） SOT-363 FEATURES z Epitaxial planar die construction z Ideal for low power amplification and switching MARKING:K6N MAXIMUM RATINGS TA=25℃ unless otherwise noted

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 CESD5V0K5 Plastic-Encapsulate Diodes ESD Protection Diodes SOT-363 DESCRIPTION The CESD5V0K5 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT2222A TRANSISTOR NPN SOT-363 FEATURE Complementary PNP Type available MMDT2907A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value  Units

ic7001

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

marking K52

Abstract: transistor K52 K52 Package BAV199DW
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes BAV199DW Multi-Chip DIODES SOT-363 FEATURES z Surface Mount Package Ideally Suited for Automatic Insertion z Very Low Leakage Current MARKING:K52 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMZ2N SOT-363 General purpose transistors dual transistors FEATURES z Both 2SA1037AK and 2SC2412K chip in a package z Transistor elements are independent, eliminating interference.