SOT-363 02 Search Results

Contextual Info: MMDT3946 NPN / PNP Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product Dual General Purpose Transistor SOT-363 The MMDT3946 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363-6

DTC114E

Abstract: 1k transistor marking DTA114E marking D3 LI20
Contextual Info: UMD3N NPN-PNP built-in resistors Multi-Chip Digital Transistor Elektronische Bauelemente SOT-363 o .055 1.40 .047(1.20) 8 o .026TYP (0.65TYP) Features .021REF (0.525)REF .053(1.35) .045(1.15) .096(2.45) .085(2.15) * DTA114E and DTC114E transistors are built-in a SOT-363 package.

UMD2N

Abstract: Digital Transistor npn-pnp CHIP TRANSISTOR transistor DTC124E npn-pnp symbol d2 transistor NPN/PNP transistor DTA124E
Contextual Info: UMD2N NPN-PNP built-in resistors Multi-Chip Digital Transistor Elektronische Bauelemente SOT-363 o .055 1.40 .047(1.20) 8 o .026TYP (0.65TYP) Features .021REF (0.525)REF .053(1.35) .045(1.15) .096(2.45) .085(2.15) * DTA124E and DTC124E transistors are built-in a SOT-363 package.

marking CODE 56

Abstract: marking code pr
Contextual Info: WILLAS SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M+ BAT54xxWTHRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features SCHOTTKY BARRIER DIODE ARRAYS SOT-363 • Batch process design, excellent power dissipation offers

SW438

Abstract: SW-438SMB SW-438TR
Contextual Info: SW-438 Preliminary GaAs SPDT Switch DC— DC — 3.0 GHz SOT-363 Plastic Package1 Features • • • • Low Insertion loss, < 0.7 dB @ 2.4 GHz1 Moderate Isolation, >25 dB @ 2.4 GHz1 Low power consumption, < 10 µA @ +3 V Low cost plastic SOT-363 package

SW-437

Abstract: jedec MO-203 macom SOT 363 DCS1800 M513 SW-437RTR SW-437SMB SW-437TR
Contextual Info: GaAs SPD Switch, DC - 3.0 GHz SW-437 SW-437 GaAs SPDT Switch DC - 3.0 GHz 1 SOT-363 Plastic Package Features • • • • Low Cost Plastic SOT-363 Package Low Insertion Loss <0.3dB @ 900 MHz Low Power Consumption <15µA @ +2.7V Positive or Negative 2.5 to 8 V Control

marking code 04 sot-363

Abstract: marking A SOT363 marking code st sot SOT 363 marking L HSMP-389L marking 06 Surface Mount SOT-363
Contextual Info: HEW LETT I & Ü PA CK A RD Surface Mount RF PIN Diodes in SOT-363 SC-70, 6 Lead Technical Data HSMP-389L/T/U Features • D io d es O ptim ized for: Ultra-Low Distortion Switching Microwave Frequency Operation • Surface M ount SOT-363 (S C -70)P ack age

ATF-13136-TR1

Abstract: transistor tag 306 MARK A1 SOT-143 sot-23 6121 ATF13136-TR1 Amplifier Micro-X "marking code" D
Contextual Info: Tape and Reel Packaging for Semiconductor Devices Package Outlines 05, 08A, 36, 76, 84, 86, MSOP-3, SOIC-8, SOT-23, SOT-143, SOT-323, SOT-343, SOT-363, SSOP-16, TQFP-32, and TQFP-48 Technical Data Description Related Standard This data sheet is intended to

BF963

Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
Contextual Info: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99

MARKING 93 SOT89

Abstract: DIN iec 286-3 part 1 smd marking code eg On semiconductor date Code on semiconductor marking code sot SMD MARKING CODE 93 smd marking SOT343 smd sot-89 marking code SOT89 bc smd marking code BA RF
Contextual Info: S IE M E N S Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-23, SOT-143, MW6.MW4 Manufacturer EH co Date code Year / Month Type code Example Siemens EH CD 1994, June BCW 66 H Marking Layout SOT-323, SOT-343, SOT-363 Manufacturer

ATF-13136-TR1

Abstract: ATF13136 atf-13136 HPMX-5001 SSOP-16 TQFP-48 On semiconductor date Code sot-143 micro-x marking code E1 transistor tag 306
Contextual Info: Tape and Reel Packaging for Semiconductor Devices Package Outlines 05, 08A, 36, 76, 84, 86, MSOP-3, SOIC-8, SOT-23, SOT-143, SOT-323, SOT-363, SSOP-16, TQFP-32, and TQFP-48 Technical Data Description Related Standard This data sheet is intended to cover standards on tape and reel

sot-363 n-channel mosfet

Abstract: 2N7002DW Small Signal MOSFET
Contextual Info: 2N7002DW 115 mAMPS, 60VOLTS, RDS on =7.5 W Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product SOT-363 Small Signal MOSFET 115 mAmps, 60 Volts .055(1.40) .047(1.20) N–Channel SOT–363 o 8 o .026TYP (0.65TYP) .021REF (0.525)REF R ating S ymbol

ts 4141

Abstract: CDIL SOD-363 smd package sot 363 16949 SOT-363 INDIA SOT363-6 continental
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-363 6 Leads SMD Plastic Package Package Outline SOT-363_Pkg_Drawing Rev071105 Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited

Voltage-HSMS-282A

Abstract: SOT-363 marking jf SOT 363 marking CODE LA HSMS-280A marking CODE 001 hsms280a LA sot363 HSMS2820 LF 28-2P 282A
Contextual Info: Wtiat H E W L E T T 1 l/LM P A C K A R D Surface M ount RF Schottky D iodes in SOT-363 SC-70, 6 Lead Technical Data HSMS 280K /L /M /N /P /R HSMS 281K/L HSMS 2 8 2 K /L /M /N /P /R F eatu res • U nique co n figu ration s in su rfa ce m ount SOT-363 package

MMDT5401

Abstract: MMDT5551
Contextual Info: MMDT5401 Plastic-Encapsulate Multi-Chip PNP+PNP Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055(1.40) .047(1.20) Features .021REF (0.525)REF * Epitaxial Planar Die Construction * Complementary NPN Type Available (MMDT5551) C2 B1

UMH9N

Contextual Info: UMH9N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 o .055 1.40 .047(1.20) 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features * Transistor elements are independent, eliminating interference. .018(0.46)

Contextual Info: KS33K5 VOLTAGE: 3.3 V Elektronische Bauelemente 40W Transient Voltage Suppressors Diode RoHS Compliant Product DESCRIPTION SOT-363 . Designed to protect voltage sensitive components from ESD. . Excellent clamping capability, low leakage and fast response.

1900mhz

Abstract: CL10B103KBNC LL1608-FS27NJ SGL-0263
Contextual Info: SGL-0263 Z SGL-0263(Z) 1400MHz to 2500MHz Silicon Germanium Cascadable Low Noise Amplifier 1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-363 Product Description Features

marking code 22

Abstract: SOT 363 marking CODE 039
Contextual Info: KS05K5 VOLTAGE: 5.0 V Elektronische Bauelemente 100 W Transient Voltage Suppressors Diode RoHS Compliant Product DESCRIPTION SOT-363 . Designed to protect voltage sensitive components from ESD. . Excellent clamping capability, low leakage and fast response.

UMH11N

Abstract: marking h11 H11 sot-363 DTC114E
Contextual Info: UMH11N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 Features .055 1.40 .047(1.20) * Mounting possible with UMT3 automatic mounting machines. o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Transistor elements are independent,

CL10B103KBNC

Abstract: LL1608-FS27NJ SGL-0263 marking code sirenza
Contextual Info: SGL-0263 Z SGL-0263(Z) 1400MHz to 2500MHz Silicon Germanium Cascadable Low Noise Amplifier 1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-363 Product Description Features

Contextual Info: MMDT3906 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Tamp.=25 C) O .018(0.46) .010(0.26) : - 0.2 A C2 Collector -base voltage

MMDT2907A

Contextual Info: MMDT2907A PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 A suffix of "-C" specifies halogen-free * Features .055 1.40 .047(1.20) o .026TYP (0.65TYP) 8 o .021REF (0.525)REF Power dissipation PCM : 0.15 W (Tamp.= 25 C)

MMDT2227

Abstract: PNP2907 NPN2222A 1N914 PNP2907A MMDT2227 equivalent multichip bauelemente
Contextual Info: MMDT2227 NPN-PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features o .055 1.40 .047(1.20) Power dissipation .026TYP (0.65TYP) PCM : 0.2 W (Tamp.= 25 C) O .021REF (0.525)REF Collector current ICM : 0.2/-0.2 A