UMH9N Search Results

Contextual Info: EMH9 / UMH9N / IMH9A Transistors General purpose dual digital transistors EMH9 / UMH9N / IMH9A zExternal dimensions (Units : mm) (3) 0.22 (4) (5) (6) (2) 1.2 1.6 0.5 0.5 1.0 1.6 EMH9 (1) 0.5 0.13 zFeatures 1) Two DTC114Ys chips in a EMT or UMT or SMT package.

marking H9

Abstract: H9 transistor marking UMH9N
Contextual Info: MCC TM Micro Commercial Components UMH9N
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Two DTC114Y Chips in SOT-363 Package. Transistor elements are independent, eliminating interference

TRANSISTOR MARKING 707

Abstract: H9 transistor marking transistor h9
Contextual Info: UMH9N IMH9A Transistor, digitai, dual, NPN, with 2 resistors Features Dimensions Units : mm • available in UMT6 (UM6) and SMT6 (IMD, SC-74) package • package marking: UMH9N and IMH9A; H9 • • • UMH9N (UMT6) 2.0+0.2 1,3±0.1 ,i. 3 i j 2 :p i 1 I

marking h5

Abstract: SOT-353 marking code B2
Contextual Info: UMH5N / IMH5A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter Tr1 and Tr2 UMT6 SMT6 (6) VCC IC(MAX.) R1 R2 (4) (5) 50V 100mA 22kW 22kW (5) (4) (6) (1) (3) (2) (2) (3) (1) UMH9N SOT-353 (SC-88) lFeatures

MARKING H9

Abstract: transistor h9 H9 transistor marking
Contextual Info: EMH9 / UMH9N / IMH9A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT6 UMT6 (6) (6) 50V 100mA 10kW 47kW (5) (5) (4) (4) (1) (1) (2) (2) (3) (3) EMH9 (SC-107C) SMT6

Contextual Info: MCC TM Micro Commercial Components UMH9N
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Halogen free available upon request by adding suffix "-HF" Two DTC114Y Chips in SOT-363 Package.

MARKING H9

Abstract: H9 transistor marking UMH9N
Contextual Info: MCC TM Micro Commercial Components UMH9N
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Halogen free available upon request by adding suffix "-HF" Two DTC114Y Chips in SOT-363 Package.

C114y

Abstract: transistors c 547 transistor c 548 DTC114YS C 547 transistor Transistors General transistor NPN 548 transistor C 547 c transistor 548 548 transistor
Contextual Info: Transistors General purpose dual digital transistors UMH9N / IMH9A FFeatures 1) Two DTC114Ys chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference.

Contextual Info: UMH5N / IMH5A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter Tr1 and Tr2 VCC 50V 100mA 22kW 22kW IC(MAX.) R1 R2 UMT6 (6) (1) (2) SMT6 (5) (4) (4) (3) (3) UMH9N SOT-353 (SC-88) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 22kW.

T110

Abstract: DTC114YS
Contextual Info: EMH9 / UMH9N / IMH9A Transistors General purpose dual digital transistors EMH9 / UMH9N / IMH9A zExternal dimensions (Unit : mm) zFeatures 1) Two DTC114Ys chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.

transistor h9

Abstract: H945 T110
Contextual Info: EMH9 / UMH9N / IMH9A Transistors General purpose dual digital transistors EMH9 / UMH9N / IMH9A zExternal dimensions (Units : mm) (3) 0.22 (4) (5) (6) (2) 1.2 1.6 0.5 0.5 1.0 1.6 EMH9 (1) 0.5 0.13 zFeatures 1) Two DTC114Ys chips in a EMT or UMT or SMT package.

transistor MW 882

Abstract: transistor D 882 p
Contextual Info: UMH9N/IMH9A £ /Transistors UMH9N IMH9A -p^ y b —- r -y K 5 Z i - J l / K x / W 7 ./Isolated Mini-M old Device I t f ^ + V T '/l'y U '-^ -J g N P N '>'J-1> h -7 > 's Z ? S t f t r t Ä ^ 'l'7 P Epitaxal Planar NPN Silicon Transistor (Includes Resistors)

Contextual Info: Transistors Digital Transistor Isolated Dual Digital Transistors UMH9N / IMH9A •F e a tu re s • E x te rn a dim ensions (Units: mm) 1) T w o D T C 114Y in UM T and SMT UMH9N packages. 2.0 ±0.2 2) M o u n tin g p o s s ib le w ith UMT3 or S M T 3 a u to m a tic m o u n tin g m a­

Contextual Info: Transistors Digital Transistor Isolated Dual Digital Transistors UMH9N / IMH9A •F e a tu re s • E x te r n a dim ensions (Units: mm) 1) T w o D T C 114Y in U M T a n d SM T IMH9A UMH9N packages. 2.0 ± 0.2 2) M o u n tin g p o s s ib le w ith UM T3 o r

Contextual Info: UMH5N / IMH5A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter Tr1 and Tr2 UMT6 SMT6 (6) VCC IC(MAX.) R1 R2 50V 100mA 22kW 22kW (4) (5) (5) (4) (6) (1) (3) (2) (2) (3) (1) UMH9N SOT-353 (SC-88) lFeatures

Contextual Info: UMH5NFHA / IMH5AFRA UMH5N / IMH5A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors AEC-Q101 Qualified lOutline Parameter Tr1 and Tr2 VCC 50V 100mA 22kW 22kW IC(MAX.) R1 R2 UMT6 (6) (1) (2) SMT6 (5) (4) (4) (3) (3) UMH9N

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors UMH9N SOT-363 DIGITAL TRANSISTOR (NPN+NPN) FEATURES z Two DTC114Y chips in a package. z Transistor elements are independent, eliminating interference. z Mounting cost and area can be cut in half.

UMH9N

Contextual Info: UMH9N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 o .055 1.40 .047(1.20) 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features * Transistor elements are independent, eliminating interference. .018(0.46)

Contextual Info: EMH9 / UMH9N / IMH9A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT6 UMT6 (6) (6) 50V 100mA 10kW 47kW (5) (5) (4) (4) (1) (1) (2) (2) (3) (3) EMH9 (SC-107C) SMT6

Contextual Info: EMH9 / UMH9N / IMH9A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter Tr1 and Tr2 VCC 50V 100mA 10kW 47kW IC(MAX.) R1 R2 EMT6 UMT6 (6) (1) (2) (5) (4) SMT6 (4) lFeatures 1) Built-In Biasing Resistors.

Contextual Info: EMH9FHA / UMH9NFHA / IMH9AFRA EMH9 / UMH9N / IMH9A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors AEC-Q101 Qualified lOutline Parameter Tr1 and Tr2 VCC 50V 100mA 10kW 47kW IC(MAX.) R1 R2 EMT6 UMT6 (6) (1) (2) (5) (4)

UMH9

Contextual Info: SPICE PARAMETER UMH9N by ROHM TR Div. * UMH9N DIGITAL NPN BJT model * Date: 2007/01/11 * BJT with resistors *C B E .SUBCKT UMH9N 1 2 3 R1 2 Base Rb 10k R2 Base 3 Re 47k Q1 1 Base 3 QDTC1 .MODEL Rb RES + R=1 .MODEL Re RES + R=1 .MODEL QDTC1 NPN

AM55-0016

Abstract: AM55-0016SMB AM55-0016TR M513
Contextual Info: Switched Low Noise Amplifier 800 - 1000 MHz Features • • • • • AM55-0016 V3 Functional Block Diagram High Gain State: -Gain: 16 dB, Noise Figure: 1.6 dB -Input IP3: +3 dBm @2.7V, 25 mA Low Gain State: -Insertion Loss: 5 dB, Input IP3: +24 dBm Single Supply: +2.7 to +5 VDC

DTC143TE

Abstract: DTC144TSA
Contextual Info: TM Micro Commercial Components DIGITAL TRANSISTORS MCC Part Number Power Dissipation Output Current Supply Voltage Pd mW Io(mA) VCC(V) DC Output Current Voltage Gain Input Input Transistion Frequency Package Polarity Marking Code Internal Diagram Gi Vo(V)